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Xiao-Guang Zhang

Xiao-Guang Zhang contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Electronic control and switching of entangled spin state using anisotropy and exchange in the three-particle paradigm

We explore the control and switching of the entangled spin states of multi-spin particle qubit coupled to an electron using a three-particle spin model described by $S_i$ ($i=1,2,3$), in which $S_1=\tfrac{1}{2}$ is an electron and $S_{2,3}$ can have any spin with both exchange coupling and magnetic anisotropy. We derive a general formula for the existence of a switching (DJ) resonance for any spin $S_{2,3}$. We further contrast the entanglement switching mechanisms for the $S_{2,3}=\tfrac{1}{2}$ and $S_{2,3}=1$ spin models. We find that while the onsite magnetic anisotropy in the case of $S_{2,3}>\tfrac{1}{2}$ allows full control of their spin states via interaction with $S_1$, in order to achieve acceptable control of a Bloch vector within the $S_{2,3}=\tfrac{1}{2}$ model, additional mechanisms, such as anisotropic exchange coupling, are required.

preprint2022arXiv

Single-Molecule Magnet Mn$_{12}$ on GaAs-supported Graphene: Gate Field Effects From First Principles

We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ (Mn$_{12}$). The magnetic anisotropy energy (MAE) of Mn$_{12}$ decreases as the electron doping level increases, due to electron transfer from graphene to Mn$_{12}$ and change in the band alignment between Mn$_{12}$ and graphene. At an electron doping level of $-5.00 \times 10^{13}\, \textrm{cm}^{-2}$, the MAE decreases by about 18% compared with zero doping. The band alignment between graphene and GaAs is more sensitive to electron doping than to hole doping since the valence band of GaAs is close to the Fermi level. The GaAs substrate induces a small bandgap in the supported graphene under the zero gate field and a nearly strain-free configuration. Finally, we propose a vertical tunnel junction for probing the gate dependence of MAE via electron transport measurements.

preprint2020arXiv

Three Jahn-Teller states of matter in the spin-crossover system Mn(taa)

Three high-spin phases recently discovered in the spin-crossover system Mn(taa) are identified through analysis by a combination of first-principles calculations and Monte Carlo simulation as a low-temperature Jahn-Teller ordered (solid) phase, an intermediate-temperature dynamically correlated (liquid) phase, and an uncorrelated (gas) phase. In particular, the Jahn-Teller liquid phase arises from competition between mixing with low-spin impurities, which drive the disorder, and inter-molecular strain interactions. The latter are a key factor in both the spin-crossover phase transition and the magnetoelectric coupling. Jahn-Teller liquids may exist in other spin-crossover materials and materials that have multiple equivalent Jahn-Teller axes.

preprint2016arXiv

Fully integrated 3.2 Gbps quantum random number generator with real-time extraction

We present a real-time and fully integrated quantum random number generator (QRNG) by measuring laser phase fluctuations. The QRNG scheme based on laser phase fluctuations is featured for its capability of generating ultra high-speed random numbers. However, the speed bottleneck of a practical QRNG lies on the limited speed of randomness extraction. To close the gap between the fast randomness generation and the slow post-processing, we propose a pipeline extraction algorithm based on Toeplitz matrix hashing and implement it in a high-speed field-programmable gate array. Further, all the QRNG components are integrated into a module, including a compact and actively stabilized interferometer, high-speed data acquisition, and real-time data post-processing and transmission. The final generation rate of the QRNG module with real-time extraction can reach 3.2 Gbps.

preprint2013arXiv

Influence of Reciprocal links in Social Networks

In this Letter, we empirically study the influence of reciprocal links, in order to understand its role in affecting the structure and function of directed social networks. Experimental results on two representative datesets, Sina Weibo and Douban, demonstrate that the reciprocal links indeed play a more important role than non-reciprocal ones in both spreading information and maintaining the network robustness. In particular, the information spreading process can be significantly enhanced by considering the reciprocal effect. In addition, reciprocal links are largely responsible for the connectivity and efficiency of directed networks. This work may shed some light on the in-depth understanding and application of the reciprocal effect in directed online social networks.

preprint2012arXiv

Molecular Magnetocapacitance

Capacitance of a nanoscale system is usually thought of having two contributions, a classical electrostatic contribution and a quantum contribution dependent on the density of states and/or molecular orbitals close to the Fermi energy. In this letter we demonstrate that in molecular nano-magnets and other magnetic nanoscale systems, the quantum part of the capacitance becomes spin-dependent, and is tunable by an external magnetic field. This molecular magnetocapacitance can be realized using single molecule nano-magnets and/or other nano-structures that have antiferromagnetic ground states. As a proof of principle, first-principles calculation of the nano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of the high-spin state is 260 meV lower than that of the low-spin state, yielding a 6% difference in capacitance. A magnetic field of ~40T can switch the spin state, thus changing the molecular capacitance. A smaller switching field may be achieved using nanostructures whose physical properties such as magnetic moment are size-dependent. Molecular magnetocapacitance may lead to revolutionary device designs, e.g., by exploiting the Coulomb blockade magnetoresistance whereby a small change in capacitance can lead to a huge change in resistance.