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Researcher profile

Xian Lin

Xian Lin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elphysics.opticsArtificial IntelligenceComputer Visioncond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2022arXiv

Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure

In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to MoS2 takes place in time scale of less than 0.5 ps, resulting in ultrafast formation of interfacial exciton in the heterostructure, subsequently, recombination relaxation of the interfacial exciton occurs in time scale of ~18 ps. A new model considering carrier heating and photogating effect in graphene is proposed to estimate the amount of carrier transfer in the heterostructure, which shows a good agreement with experimental result. Moreover, when the photon-energy is on-resonance with the A-exciton of MoS2, photogenerated holes in MoS2 are transferred to graphene layer within 0.5 ps, leading to the formation of interfacial exciton, the subsequent photoconductivity (PC) relaxation of graphene and bleaching recovery of A-exciton in MoS2 take place around ~10 ps time scale, ascribing to the interfacial exciton recombination. The faster recombination time of interfacial exciton with on-resonance excitation could come from the reduced interface barrier caused by bandgap renormalization effect. Our study provides deep insight into the understanding of interfacial charge transfer as well as the relaxation dynamics in graphene-based heterostructures, which are promising for the applications of graphene-based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Semiconductor-like photocarrier dynamics in Dirac Semimetal Cd3As2 film Probed with transient Terahertz Spectroscopy

The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past decades, one intriguing debate is the underlined mechanism that governing the nonequilibrium carrier dynamics following photoexcitation. In this study, the temperature dependent photocarrier dynamics in Cd3As2 film has been investigated with time-resolved terahertz spectroscopy. The experimental results demonstrate that photoexcitation results in abrupt increase in THz photoconductivity, and the subsequent relaxation shows a single exponential relaxation for various temperatures and pump fluences. The relaxation time increase from 4.7 ps at 5 K to 7.5 ps at 220 K, while the lifetime remains almost constant of ~7.5 ps with temperature above 220 K. A Rothwarf-Taylor model was employed to fit the temperature dependent relaxation time, and a narrow energy gap of ~35 meV is obtained, which occurs around the Dirac node. Our THz spectroscopy results demonstrate that the photocarrier relaxation in Cd3As2 shows a semiconductor-like behavior, rather than hot carrier scatterings in graphene and most of metals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature-driven Emergence of Negative Photoconductivity in Semimetal MoTe2 Film Probed with Terahertz Spectroscopy

Layered two-dimensional (2D) materials MoTe2 have been paid special attention due to the rich optoelectronic properties with various phases. The nonequilibrium carrier dynamics as well as its temperature dependence in MoTe2 are of prime importance, as it can shed light on understanding the anomalous optical response and potential applications in far infrared (IR) photodetection. Hereby, we employ time-resolved terahertz (THz) spectroscopy to study the temperature dependent nonequilibrium carrier dynamics in MoTe2 films. After photoexcitation of 1.59 eV, the 1T'-phase MoTe2 at high temperature behaves only THz positive photoconductivity (PPC) with relaxation time of less than 1 ps. In contrast, the Td-phase MoTe2 at low temperature shows ultrafast THz PPC initially followed by emerging THz negative photoconductivity (NPC), and the THz NPC signal relaxes to the equilibrium state in hundreds of ps time scale. Small polaron formation induced by hot carrier has been proposed to be ascribed to the THz NPC in the polar semimetal MoTe2 at low temperature. The polaron formation time after photoexcitation increases slightly with temperature, which is determined to be ~0.4 ps at 5 K and 0.5 ps at 100 K. Our experimental result demonstrates for the first time the dynamical formation of small poalron in MoTe2 Weyl semimetal, this is fundamental importance on the understanding the temperature dependent electron-phonon coupling and quantum phase transition, as well as the designing the MoTe2-based far IR photodetector.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The Lighter The Better: Rethinking Transformers in Medical Image Segmentation Through Adaptive Pruning

Vision transformers have recently set off a new wave in the field of medical image analysis due to their remarkable performance on various computer vision tasks. However, recent hybrid-/transformer-based approaches mainly focus on the benefits of transformers in capturing long-range dependency while ignoring the issues of their daunting computational complexity, high training costs, and redundant dependency. In this paper, we propose to employ adaptive pruning to transformers for medical image segmentation and propose a lightweight and effective hybrid network APFormer. To our best knowledge, this is the first work on transformer pruning for medical image analysis tasks. The key features of APFormer mainly are self-supervised self-attention (SSA) to improve the convergence of dependency establishment, Gaussian-prior relative position embedding (GRPE) to foster the learning of position information, and adaptive pruning to eliminate redundant computations and perception information. Specifically, SSA and GRPE consider the well-converged dependency distribution and the Gaussian heatmap distribution separately as the prior knowledge of self-attention and position embedding to ease the training of transformers and lay a solid foundation for the following pruning operation. Then, adaptive transformer pruning, both query-wise and dependency-wise, is performed by adjusting the gate control parameters for both complexity reduction and performance improvement. Extensive experiments on two widely-used datasets demonstrate the prominent segmentation performance of APFormer against the state-of-the-art methods with much fewer parameters and lower GFLOPs. More importantly, we prove, through ablation studies, that adaptive pruning can work as a plug-n-play module for performance improvement on other hybrid-/transformer-based methods. Code is available at https://github.com/xianlin7/APFormer.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast Dynamics of Defect-Assisted Auger process in PdSe2 films: Synergistic Interaction Between Defect Trapping and Auger Effect

Strong Coulomb interactions in two-dimensional systems, together with quantum confinement, make many-body processes particularly effective for carrier dynamics, which plays a crucial role in determining carrier lifetime, photoconductivity, and emission yield of the materials. Hereby, by using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in the PdSe2 films with different thickness. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence, and a slow component has typical lifetime of 7.3 ps decreasing with the layer thickness. Surprisingly, the relaxation times for both fast and slow components are exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe2 films. A model involving defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between Auger process and defects in two-dimensional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Terahertz emission in the van der Waals magnet CrSiTe3

The van der Waals magnet CrSiTe3 (CST) has captured immense interest because it is capable of retaining the long-range ferromagnetic order even in its monolayer form, thus offering potential use in spintronic devices. Bulk CST crystal has inversion symmetry that is broken on the crystal surface. Here, by employing ultrafast terahertz (THz) emission spectroscopy and time resolved THz spectroscopy, the THz emission of the CST crystal was investigated, which shows a strong THz emission from the crystal surface under femtosecond (fs) pulse excitation at 800 nm. Theoretical analysis based on space symmetry of CST suggests the dominant role of shift current occurring on the surface with a thickness of a few quintuple layers in producing the THz emission, in consistence with the experimental observation that the emitted THz amplitude strongly depends on the azimuthal and pumping polarization angles. The present study offers a new efficient THz emitter as well as a better understanding of the nonlinear optical response of CST. It hopefully will open a window toward the investigation on the nonlinear optical response in the mono-/few-layer van der Waals crystals with low-dimensional magnetism.

0 citations0 reviewsNo code linkedOpen access