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Source author record

X. Renshaw Wang

X. Renshaw Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets

The evolution of skyrmion crystal encapsulates skyrmion critical behaviors, such as nucleation, deformation and annihilation. Here, we achieve a tunable evolution of artificial skyrmion crystal in nanostructured synthetic antiferromagnet multilayers, which are comprised of perpendicular magnetic multilayers and nanopatterned arrays of magnetic nanodots. The out-of-plane magnetization hysteresis loops and first-order reversal curves show that the nucleation and annihilation of the artificial skyrmion can be controlled by tuning the diameter of and spacing between the nanodots. Moreover, when the bottom layer thickness increases, the annihilation of skyrmion shifts from evolving into a ferromagnetic spin texture to evolving into an antiferromagnetic spin texture. Most significantly, non-volatile multiple states are realized at zero magnetic field via controlling the proportion of the annihilated skyrmions in the skyrmion crystal. Our results demonstrate the tunability and flexibility of the artificial skyrmion platform, providing a promising route to achieve skyrmion-based multistate devices, such as neuromorphic spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain accommodation through facet matching in La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$/Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ ramp-edge junctions

Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Critical behavior at the dynamic Mott transition

We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott insulator where magnetic field-induced vortices are frozen in the dimples of the egg crate potential by their strong repulsion interaction is discovered. We find an insulator-to-metal transition driven by the applied electric current and determine critical exponents that exhibit striking similarity with the common thermodynamic liquid-gas transition. A simple and straightforward quantum mechanical picture is proposed that describes both tunneling dynamics in the deep insulating state and the observed scaling behavior in the vicinity of the critical point. Our findings offer a comprehensive description of dynamic Mott critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Imaging and Control of Ferromagnetism in a Polar Antiferromagnet

Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells or more, the LaMnO3 film undergoes a phase transition to a ferromagnetic state over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The transition is explained in terms of electronic reconstruction originating from the polar nature of the LaMnO3 (001) films. Our results demonstrate how new emergent functionalities can be visualized and engineered in atomically thick oxide films at the atomic level.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Manipulating electronic states at oxide interfaces using focused micro X-rays from standard lab-sources

Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the complex oxide materials LaAlO3 and SrTiO3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Static and Ultrafast Dynamics of Defects of SrTiO3 in LaAlO3/SrTiO3 Heterostructures

A detailed defect energy level map was investigated for heterostructures of 26 unit cells of LaAlO3 on SrTiO3 prepared at a low oxygen partial pressure of 10-6 mbar. The origin is attributed to the presence of dominating oxygen defects in SrTiO3 substrate. Using femtosecond laser spectroscopy, the transient absorption and relaxation times for various transitions were determined. An ultrafast relaxation process of 2-3 picosecond from the conduction band to the closest defect level and a slower process of 70-92 picosecond from conduction band to intra-band defect level were observed. The results are discussed on the basis of propose defect-band diagram.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic Magneto Resistance and Planar Hall Effect at the LaAlO$_3$/SrTiO$_3$ Heterointerfaces: Effect of Carrier Confinement on Magnetic Interactions

The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO$_3$/SrTiO$_3$ interface play a significant role in its emerging properties. Here we report a fourfold oscillation in the anisotropic magneto resistance (AMR) and the observation of planar Hall effect (PHE) at the LaAlO$_3$/SrTiO$_3$ heterointerface. We evaluate the carrier confinement effects on the AMR and find that the fourfold oscillation appears only for the case of 2DEG system while it is twofold for the 3D system. As the fourfold oscillation fits well to the phenomenological model for a cubic symmetry system, we attribute this oscillation to the anisotropy in the magnetic scattering arising from the interaction of electrons with the localized magnetic moments coupled to the crystal symmetry. The AMR behavior is further found to be sensitive to applied gate electric field, emphasizing the significance of spin-orbit coupling at the interface. These confinement effects suggest that the magnetic interactions are predominant at the interface, and the gate electric field modulation of AMR suggest the possible gate tunable magnetic interactions in these systems. The observed large PHE further indicates that the in plane nature of magnetic ordering arises from the in-plane Ti 3dxy orbitals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $\leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 \times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $\geq 20$ unit cells. The $\sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.

0 citations0 reviewsNo code linkedOpen access