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X. Q. Wang

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Published work

8 published item(s)

preprint2016arXiv

Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2

We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are observed in the ultralow-frequency region, which are used to quantitatively evaluate the interlayer coupling in ML MoTe2 based on the linear chain model, in which only the nearest interlayer coupling is considered. The Raman spectra on three different substrates verify the negligible substrate effect on the phonon frequencies of ML MoTe2. Ten excitation energies are used to measure the high-frequency modes of N-layer MoTe2 (NL MoTe2; N is an integer). Under the resonant excitation condition, we observe N-dependent Davydov components in ML MoTe2 , originating from the Raman-active A'1(A21g) modes at ~172 cm-1. More than two Davydov components are observed in NL MoTe2 for N larger than 4 by Raman spectroscopy. The N-dependent Davydov components are further investigated based on the symmetry analysis. A van der Waals model only considering the nearest interlayer coupling has been proposed to well understand the Davydov splitting of high-frequency A'1(A21g) modes. The different resonant profiles for the two Davydov components in 3L MoTe2 indicate that proper excitation energy of ~1.8-2.2 eV must be chosen to observe the Davydov splitting in ML MoTe2 . Our work presents a simple way to identify layer number of ultrathin MoTe2 flakes by the corresponding number and peak position of Davydov components. Our work also provides a direct evidence from Raman spectroscopy of how the nearest van der Waals interactions significantly affect the frequency of the high-frequency intralayer phonon modes in multilayer MoTe2 and expands the understanding on the lattice vibrations and interlayer coupling of transition metal dichalcogenides and other two-dimensional materials.

preprint2013arXiv

Exploration and Research on the New Mixed-Mechanism of Superconductors

We propose a new mixed-mechanism for superconductors, which addresses not only low- but also high-, and even possible room-temperature superconductivity. We use this mixed-mechanism to explain superconductivity in different temperature regions. This new mixed-mechanism is further explored and studied by investigating the possible interactions that may form Cooper pairs.

preprint2012arXiv

A possible mechanism for the negative capacitance observed in organic devices

The mechanism of negative capacitance, e.g. inductance, induced by a sufficient electrical field in the organic device is investigated. The cations in organic bulk are proposed to be driven by the applied voltage and to accumulate at the interface, and further to generate the surface states or media states. These states result in a larger junction current through the device, indicating the negative capacitances which are simulated in three situations: impedance spectrum, capacitance measurement and current response. This simple kinetic model may be helpful to understand why the negative capacitance phenomenon is observed in various organic devices.

preprint2012arXiv

Phototransistor Behavior Based on Dye-Sensitized Solar Cell

In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase, saturated plateau and breakdown-like increase, which are actually of the typical performances for a photo-gated transistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to arise from the difference in the effective photo-conducting areas. The photovoltaic voltage between the shared counter electrode and drain (VCE-D) is investigated as well, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels and thus resulting in the characteristic phototransistor behaviors.

preprint2011arXiv

A Novel Large Moment Antiferromagnetic Order in K0.8Fe1.6Se2 Superconductor

The discovery of cuprate high Tc superconductors has inspired searching for unconventional su- perconductors in magnetic materials. A successful recipe has been to suppress long-range order in a magnetic parent compound by doping or high pressure to drive the material towards a quantum critical point, which is replicated in recent discovery of iron-based high TC superconductors. The long-range magnetic order coexisting with superconductivity has either a small magnetic moment or low ordering temperature in all previously established examples. Here we report an exception to this rule in the recently discovered potassium iron selenide. The superconducting composition is identified as the iron vacancy ordered K0.8Fe1.6Se2 with Tc above 30 K. A novel large moment 3.31 μB/Fe antiferromagnetic order which conforms to the tetragonal crystal symmetry has the unprecedentedly high an ordering temperature TN = 559 K for a bulk superconductor. Staggeredly polarized electronic density of states thus is suspected, which would stimulate further investigation into superconductivity in a strong spin-exchange field under new circumstance.

preprint2011arXiv

On the Structure of Vacancy Ordered Superconducting Alkali Metal Iron Selenide

With single crystal X-ray diffraction studies, we compare the structures of three sample showing optimal superconductivity, K0.774(4)Fe1.613(2)Se2, K0.738(6)Fe1.631(3)Se2 and Cs0.748(2)Fe1.626(1)Se2. All have an almost identical ordered vacancy structure with a ({\sqrt}5 x {\sqrt}5 x 1) super cell. The tetragonal unit cell, space group I4/m, possesses lattice parameters at 250K of a = b = 8.729(2) Å and c = 14.120(3) Å, a = b = 8.7186(12) Å and c = 14.0853(19) Å and at 295 K, a = b = 8.8617(16) Å and c = 15.304(3) Å for the three crystals, respectively. The structure contains two iron sites; one is almost completely empty, whilst the other is fully occupied. There are similarly two alkali metal sites that are occupied in the range of 72.2(2) % to 85.3(3) %. The inclusion of alkali metals and the presence of vacancies within the structure allows for considerable relaxation of the FeSe4 tetrahedron, compared with members of the Fe(Te, Se, S) series, and the resulting shift of the Se - F - Se bond angles to less distorted geometry could be important in understanding the associated increase in the superconducting transition temperature. The structure of these superconductors distinguishes themselves from the structure of the non-superconducting phases by an almost complete absence of Fe on the (0 0.5 0.25) site as well as lower alkali metal occupancy that ensures an exact Fe2+ oxidation state, which are clearly critical parameters in the promotion of superconductivity.

preprint2010arXiv

Phase diagram of the NdFe1-xRhxAsO superconductor

Polycrystalline samples with a nominal composition of NdFe1-xRhxAsO (0 <= x <= 0.25) were synthesized using a solid state reaction method. Bulk superconductivity with a maximum Tc = 13 K is observed in the x = 0.1 sample. A temperature-composition phase diagram is established for the NdFe1-xRhxAsO system based on the electrical resistivity and magnetization measurements. A first-order-like transition from an antiferromagnetic state to the superconducting state at a critical Rh-doping point xc = 0.045 is observed in the present phase diagram. The value for the upper critical field Hc2(0) is estimated to be about 26 T for the x = 0.10 sample by using the WHH theory.

preprint2009arXiv

Microstructure and superconductivity of Ir-doped BaFe2As2 superconductor

Polycrystalline samples with nominal composition of Ba(Fe1-xIrx)2As2 (x=0.10, 0.15, and 0.20) were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical resistivity, and magnetization measurements. XRD and SEM results showed that almost single phase samples were obtained. Bulk superconductivity with TC~28 K was observed in the x=0.10 sample. TC~28 K is the highest superconducting critical temperature among the reported data for electron-doped AFe2As2-type (A=Ca, Sr, and Ba) superconductors. The upper critical field Hc2(0) reaches as high as 65 T for the x=0.10 sample. The underlying physics is discussed in connection with Co-doping case.