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X. Mi

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Published work

11 published item(s)

preprint2021arXiv

Realizing topologically ordered states on a quantum processor

The discovery of topological order has revolutionized the understanding of quantum matter in modern physics and provided the theoretical foundation for many quantum error correcting codes. Realizing topologically ordered states has proven to be extremely challenging in both condensed matter and synthetic quantum systems. Here, we prepare the ground state of the toric code Hamiltonian using an efficient quantum circuit on a superconducting quantum processor. We measure a topological entanglement entropy near the expected value of $\ln2$, and simulate anyon interferometry to extract the braiding statistics of the emergent excitations. Furthermore, we investigate key aspects of the surface code, including logical state injection and the decay of the non-local order parameter. Our results demonstrate the potential for quantum processors to provide key insights into topological quantum matter and quantum error correction.

preprint2020arXiv

Demonstrating a Continuous Set of Two-qubit Gates for Near-term Quantum Algorithms

Quantum algorithms offer a dramatic speedup for computational problems in machine learning, material science, and chemistry. However, any near-term realizations of these algorithms will need to be heavily optimized to fit within the finite resources offered by existing noisy quantum hardware. Here, taking advantage of the strong adjustable coupling of gmon qubits, we demonstrate a continuous two-qubit gate set that can provide a 3x reduction in circuit depth as compared to a standard decomposition. We implement two gate families: an iSWAP-like gate to attain an arbitrary swap angle, $θ$, and a CPHASE gate that generates an arbitrary conditional phase, $ϕ$. Using one of each of these gates, we can perform an arbitrary two-qubit gate within the excitation-preserving subspace allowing for a complete implementation of the so-called Fermionic Simulation, or fSim, gate set. We benchmark the fidelity of the iSWAP-like and CPHASE gate families as well as 525 other fSim gates spread evenly across the entire fSim($θ$, $ϕ$) parameter space achieving purity-limited average two-qubit Pauli error of $3.8 \times 10^{-3}$ per fSim gate.

preprint2020arXiv

Direct measurement of non-local interactions in the many-body localized phase

The interplay of interactions and strong disorder can lead to an exotic quantum many-body localized (MBL) phase. Beyond the absence of transport, the MBL phase has distinctive signatures, such as slow dephasing and logarithmic entanglement growth; they commonly result in slow and subtle modification of the dynamics, making their measurement challenging. Here, we experimentally characterize these properties of the MBL phase in a system of coupled superconducting qubits. By implementing phase sensitive techniques, we map out the structure of local integrals of motion in the MBL phase. Tomographic reconstruction of single and two qubit density matrices allowed us to determine the spatial and temporal entanglement growth between the localized sites. In addition, we study the preservation of entanglement in the MBL phase. The interferometric protocols implemented here measure affirmative correlations and allow us to exclude artifacts due to the imperfect isolation of the system. By measuring elusive MBL quantities, our work highlights the advantages of phase sensitive measurements in studying novel phases of matter.

preprint2020arXiv

Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics

Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.

preprint2019arXiv

Flopping-mode electric dipole spin resonance

Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.

preprint2019arXiv

Long-Range Microwave Mediated Interactions Between Electron Spins

Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins.

preprint2016arXiv

Double Quantum Dot Floquet Gain Medium

Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here we show that a single electron in a periodically driven DQD functions as a "Floquet gain medium," where population imbalances in the DQD Floquet quasi-energy levels lead to an intricate pattern of gain and loss features in the cavity response. We further measure a large intra-cavity photon number n_c in the absence of a cavity drive field, due to equilibration in the Floquet picture. Our device operates in the absence of a dc current -- one and the same electron is repeatedly driven to the excited state to generate population inversion. These results pave the way to future studies of non-classical light and thermalization of driven quantum systems.

preprint2016arXiv

Scalable gate architecture for densely packed semiconductor spin qubits

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible.

preprint2015arXiv

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

preprint2015arXiv

A temperature-mapping system for multi-cell SRF accelerating cavities

A Temperature mapping (T-map) system for Superconducting Radio Frequency (SRF) cavities consists of a thermometer array positioned precisely on an exterior cavity wall, capable of detecting small increases in temperature; therefore it is a powerful tool for research on the quality factor (Q0) of SRF cavities. A new multi-cell T-mapping system is has been developed at Cornell University. The system has nearly two thousand thermometers to cover 7-cell SRF cavities for Cornell ERL project. A new multiplexing scheme was adopted to reduce number of wires. A 1mK resolution of the temperature increase Delta T is achieved. A 9-cell cavity of TESLA geometry was tested with the T-map system. By converting Delta T to power loss and quality factor, it has been found that for this cavity, most surface losses were generated by the first cell when the accelerating gradient is increased above 15MV/m. The comparison of Q-value between with and without hotspots shows the heating on cavity wall degraded cavity Q0 about 1.65 times. The power loss on the hotspots is about 40% of the total power. Effective and intuitive ways of displaying surface properties of the cavity interior, e.g. the residual resistivity, will be shown.

preprint2015arXiv

Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.