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Source author record

J. R. Petta

J. R. Petta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.othercond-mat.stat-mechcond-mat.supr-con

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Published work

50 published item(s)

preprint2020arXiv

Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics

Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Coherent transfer of quantum information in silicon using resonant SWAP gates

Solid state quantum processors based on spins in silicon quantum dots are emerging as a powerful platform for quantum information processing. High fidelity single- and two-qubit gates have recently been demonstrated and large extendable qubit arrays are now routinely fabricated. However, two-qubit gates are mediated through nearest-neighbor exchange interactions, which require direct wavefunction overlap. This limits the overall connectivity of these devices and is a major hurdle to realizing error correction, quantum random access memory, and multi-qubit quantum algorithms. To extend the connectivity, qubits can be shuttled around a device using quantum SWAP gates, but phase coherent SWAPs have not yet been realized in silicon devices. Here, we demonstrate a new single-step resonant SWAP gate. We first use the gate to efficiently initialize and readout our double quantum dot. We then show that the gate can move spin eigenstates in 100 ns with average fidelity $\bar{F}_{SWAP}^p$ = 98%. Finally, the transfer of arbitrary two-qubit product states is benchmarked using state tomography and Clifford randomized benchmarking, yielding an average fidelity of $\bar{F}_{SWAP}^c$ = 84% for gate operation times of ~300 ns. Through coherent spin transport, our resonant SWAP gate enables the coupling of non-adjacent qubits, thus paving the way to large scale experiments using silicon spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Flopping-mode electric dipole spin resonance

Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Long-Range Microwave Mediated Interactions Between Electron Spins

Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Dispersive readout of valley splittings in cavity-coupled silicon quantum dots

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fingerprint" of the microscopic energy level structure of a semiconductor double quantum dot, providing useful information on valley splittings and intervalley coupling rates.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Double Quantum Dot Floquet Gain Medium

Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here we show that a single electron in a periodically driven DQD functions as a "Floquet gain medium," where population imbalances in the DQD Floquet quasi-energy levels lead to an intricate pattern of gain and loss features in the cavity response. We further measure a large intra-cavity photon number n_c in the absence of a cavity drive field, due to equilibration in the Floquet picture. Our device operates in the absence of a dc current -- one and the same electron is repeatedly driven to the excited state to generate population inversion. These results pave the way to future studies of non-classical light and thermalization of driven quantum systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Scalable gate architecture for densely packed semiconductor spin qubits

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Sisyphus Thermalization of Photons in a Cavity-Coupled Double Quantum Dot

We investigate the non-classical states of light that emerge in a microwave resonator coupled to a periodically-driven electron in a nanowire double quantum dot (DQD). Under certain drive configurations, we find that the resonator approaches a thermal state at the temperature of the surrounding substrate with a chemical potential given by a harmonic of the drive frequency. Away from these thermal regions we find regions of gain and loss, where the system can lase, or regions where the DQD acts as a single-photon source. These effects are observable in current devices and have broad utility for quantum optics with microwave photons.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The Role of Multilevel Landau-Zener Interference in Extreme Harmonic Generation

Motivated by the observation of multiphoton electric dipole spin resonance processes in InAs nanowires, we theoretically study the transport dynamics of a periodically driven five-level system, modeling the level structure of a two-electron double quantum dot. We show that the observed multiphoton resonances, which are dominant near interdot charge transitions, are due to multilevel Landau-Zener-Stuckelberg-Majorana interference. Here a third energy level serves as a shuttle that transfers population between the two resonant spin states. By numerically integrating the master equation we replicate the main features observed in the experiments: multiphoton resonances (as large as 8 photons), a robust odd-even dependence, and oscillations in the electric dipole spin resonance signal as a function of energy level detuning.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fast charge sensing of a cavity-coupled double quantum dot using a Josephson parametric amplifier

We demonstrate fast readout of a double quantum dot (DQD) that is coupled to a superconducting resonator. Utilizing parametric amplification in a nonlinear operational mode, we improve the signal-to-noise ratio (SNR) by a factor of 2000 compared to the situation with the parametric amplifier turned off. With an integration time of 400 ns we achieve a SNR of 76. By studying SNR as a function of the integration time we extract an equivalent charge sensitivity of 8 x 10^{-5} e/root(Hz). The high SNR allows us to acquire a DQD charge stability diagram in just 20 ms. At such a high data rate, it is possible to acquire charge stability diagrams in a live "video-mode," enabling real time tuning of the DQD confinement potential.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hyperfine-Enhanced Gyromagnetic Ratio of a Nuclear Spin in Diamond

Nuclear spins in the solid state environment of diamond are highly coherent, but difficult to rapidly control due to the small nuclear gyromagnetic ratio. Here we demonstrate a more than 50-fold enhancement of the effective nuclear gyromagnetic ratio by coupling the nuclear spin to an electronic spin of a nitrogen-vacancy (NV) center in diamond. The enhancement allows for faster nuclear spin rotations and is in good agreement with second-order perturbation theory. The method may be applied to other systems with similar electron-nuclear spin interactions, such as phosphorous donors in silicon, opening up the possibility of fast and direct nuclear spin control in coupled spin systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

MOCVD synthesis of compositionally tuned topological insulator nanowires

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phonon-Assisted Gain in a Semiconductor Double Quantum Dot Maser

We develop a microscopic model for the recently demonstrated double quantum dot (DQD) maser. In characterizing the gain of this device we find that, in addition to the direct stimulated emission of photons, there is a large contribution from the simultaneous emission of a photon and a phonon, i.e., the phonon sideband. We show that this phonon-assisted gain typically dominates the overall gain which leads to masing. Recent experimental data are well fit with our model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Semiconductor double quantum dot micromaser

The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from THz sources to quantum communication. Here we demonstrate a maser that is driven by single electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside of a high quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Extreme Harmonic Generation in Electrically Driven Spin Resonance

We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fast Room-Temperature Phase Gate on a Single Nuclear Spin in Diamond

Nuclear spins support long lived quantum coherence due to weak coupling to the environment, but are difficult to rapidly control using nuclear magnetic resonance (NMR) as a result of the small nuclear magnetic moment. We demonstrate a fast ~ 500 ns nuclear spin phase gate on a 14N nuclear spin qubit intrinsic to a nitrogen-vacancy (NV) center in diamond. The phase gate is enabled by the hyperfine interaction and off-resonance driving of electron spin transitions. Repeated applications of the phase gate bang-bang decouple the nuclear spin from the environment, locking the spin state for up to ~ 140 microseconds.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photon Emission from a Cavity-Coupled Double Quantum Dot

We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic transport through the DQD leads to photon emission from the cavity at a rate of 10 MHz. With a small cavity drive field, we observe a gain of up to 15 in the cavity transmission. Our results are analyzed in the context of existing theoretical models and suggest that it may be necessary to account for inelastic tunneling processes that proceed via simultaneous emission of a phonon and a photon.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6

Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te6 phonons results primarily from anharmonicity, though a small magneto-elastic coupling is also observed. Our results confirm the potential of Cr2Ge2Te6 as a substrate for topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses

We study finite-time Landau-Zener transitions at a singlet-triplet level crossing in a GaAs double quantum dot, both experimentally and theoretically. Sweeps across the anticrossing in the high driving speed limit result in oscillations with a small visibility. Here we demonstrate how to increase the oscillation visibility while keeping sweep times shorter than T2* using a tailored pulse with a detuning dependent level velocity. Our results show an improvement of a factor ~2.9 for the oscillation visibility. In particular, we were able to obtain a visibility of ~0.5 for Stückelberg oscillations, which demonstrates the creation of an equally weighted superposition of the qubit states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comment on `Vacuum Rabi Splitting in a Semiconductor Circuit QED System' by Toida et al., Phys. Rev. Lett. 110, 066802 - Published 6 February 2013

Toida et al. claim in their recent article [Phys. Rev. Lett. 110, 066802 (2013)] that they `report a direct observation of vacuum Rabi splitting in a GaAs/AlGaAs double quantum dot (DQD) based charge qubit coupled with a superconducting coplanar waveguide (CPW) resonator'. In this comment, we challenge the main claims made in their paper and show that their results: a) do not provide any evidence of vacuum Rabi oscillations and b) do not provide any direct evidence of vacuum Rabi splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interplay of charge and spin coherence in Landau-Zener-Stückelberg-Majorana interferometry

We study Landau-Zener dynamics in a double quantum dot filled with two electrons, where the spin states can become correlated with charge states and the level velocity can be tuned in a time-dependent fashion. We show that a correct interpretation of experimental data is only possible when finite-time effects are taken into account. In addition, our formalism allows the study of partial adiabatic dynamics in the presence of phonon-mediated hyperfine relaxation and charge-noise-induced dephasing. Our findings demonstrate that charge noise severely impacts the visibility of Landau-Zener-Stückelberg-Majorana interference fringes. This indicates that charge coherence must be treated on an equal footing with spin coherence.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Radio Frequency Charge Parity Meter

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g_c/2pi ~ 17 MHz.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cavity-Mediated Entanglement Generation Via Landau-Zener Interferometry

We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stuckelberg interference patterns, with a visibility that can be sensitively tuned by adjusting the level velocity through both the non-adiabatic and adiabatic regimes. Two-qubit state tomography indicates that a Bell state can be generated via a single passage, with a fidelity of 78% limited by qubit relaxation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Circuit Quantum Electrodynamics with a Spin Qubit

Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Landau-Zener-Stuckelberg Interferometry of a Single Electron Charge Qubit

We perform Landau-Zener-Stuckelberg interferometry on a single electron GaAs charge qubit by repeatedly driving the system through an avoided crossing. We observe coherent destruction of tunneling, where periodic driving with specific amplitudes inhibits current flow. We probe the quantum dot occupation using a charge sensor, observing oscillations in the qubit population resulting from the microwave driving. At a frequency of 9 GHz we observe excitation processes driven by the absorption of up to 17 photons. Simulations of the qubit occupancy are in good agreement with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nonadiabatic quantum control of a semiconductor charge qubit

We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point contact charge sensor. We observe Ramsey fringes in the excited state occupation in response to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge-echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Radio frequency charge sensing in InAs nanowire double quantum dots

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for charge transitions with the leads.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Harnessing the GaAs quantum dot nuclear spin bath for quantum control

We theoretically demonstrate that nuclear spins can be harnessed to coherently control two-electron spin states in a double quantum dot. Hyperfine interactions lead to an avoided crossing between the spin singlet state and the ms = +1 triplet state, T_+ . We show that a coherent superposition of singlet and triplet states can be achieved using finite-time Landau-Zener-Stückelberg interferometry. In this system the coherent rotation rate is set by the Zeeman energy, resulting in ~1 nanosecond single spin rotations. We analyze the coherence of this spin qubit by considering the coupling to the nuclear spin bath and show that T_2^* ~ 16 ns, in good agreement with experimental data. Our analysis further demonstrates that efficient single qubit and two qubit control can be achieved using Landau-Zener-Stückelberg interferometry.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Coherence in a One-Electron Semiconductor Charge Qubit

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ~7 ns at the charge degeneracy point, where the qubit level splitting is first-order-insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with predictions from a 1/f noise model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A coherent beam splitter for electronic spin states

Rapid coherent control of electron spin states is required for implementation of a spin-based quantum processor. We demonstrate coherent control of electronic spin states in a double quantum dot by sweeping an initially prepared spin singlet state through a singlet-triplet anti-crossing in the energy level spectrum. The anti-crossing serves as a beam splitter for the incoming spin singlet state. Consecutive crossings through the beam splitter, when performed within the spin dephasing time, result in coherent quantum oscillations between the singlet state and a triplet state. The all-electrical method for quantum control relies on electron-nuclear spin coupling and drives single electron spin rotations on nanosecond timescales.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Correlating the nanostructure and electronic properties of InAs nanowires

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot

Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron spin coherence and potentially enable the nuclear environment to be harnessed for the long-term storage of quantum information. Toward this goal, we report experimental control of the relaxation of nuclear spin polarization in a gate-defined two-electron GaAs double quantum dot. A cyclic gate-pulse sequence transfers the spin of an electron pair to the host nuclear system, establishing a local nuclear polarization that relaxes on a time scale of seconds. We find nuclear relaxation depends on magnetic field and gate-controlled two-electron exchange, consistent with a model of electron mediated nuclear spin diffusion.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Suppressing Spin Qubit Dephasing by Nuclear State Preparation

Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component of nuclear spin fluctuations below its equilibrium value by a factor of ~ 70, extending the inhomogeneous dephasing time for the two-electron spin state beyond 1 microsecond. The nuclear state can be readily prepared by electrical gate manipulation and persists for > 10 seconds.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Relaxation, dephasing, and quantum control of electron spins in double quantum dots

Recent experiments have demonstrated quantum manipulation of two-electron spin states in double quantum dots using electrically controlled exchange interactions. Here, we present a detailed theory for electron spin dynamics in two-electron double dot systems that was used to guide these experiments and analyze experimental results. The theory treats both charge and spin degrees of freedom on an equal basis. Specifically, we analyze the relaxation and dephasing mechanisms that are relevant to experiments and discuss practical approaches for quantum control of two-electron system. We show that both charge and spin dephasing play important roles in the dynamics of the two-spin system, but neither represents a fundamental limit for electrical control of spin degrees of freedom in semiconductor quantum bits.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spins in few-electron quantum dots

This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for: (1) the rotation of an electron spin into a superposition of up and down, (2) the measurement of the quantum state of an individual spin and (3) the control of the interaction between two neighbouring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins (i.e. single-spintronics).

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preprint2005arXiv

Charge and spin manipulation in a few-electron double dot

We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot. A local quantum point contact charge detector measures the photon-induced change in occupancy of the charge states. Charge detection is used to measure T1~16 ns and also provides a lower bound estimate for T2* of 400 ps for the charge qubit. In the two-electron regime we use pulsed-gate techniques to measure the singlet-triplet relaxation time for nearly-degenerate spin states. These experiments demonstrate that the hyperfine interaction leads to fast spin relaxation at low magnetic fields. Finally, we discuss how two-electron spin states can be used to form a logical spin qubit.

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preprint2005arXiv

Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot

The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the electron spin to its orbital motion or to nuclear spins. Relaxation of confined electron spin has been previously measured only for Zeeman or exchange split spin states, where spin-orbit effects dominate relaxation, while spin flips due to nuclei have been observed in optical spectroscopy studies. Using an isolated GaAs double quantum dot defined by electrostatic gates and direct time domain measurements, we investigate in detail spin relaxation for arbitrary splitting of spin states. Results demonstrate that electron spin flips are dominated by nuclear interactions and are slowed by several orders of magnitude when a magnetic field of a few millitesla is applied. These results have significant implications for spin-based information processing.

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preprint2004arXiv

Manipulation of a single charge in a double quantum dot

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point contact charge detectors enable a direct measurement of the photon-induced change in occupancy of the charge states. From charge sensing measurements, we find T1~16 ns and a lower bound estimate for T2* of 400 ps for the charge two-level system.

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preprint2004arXiv

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot

A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly-degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state, measured as a function of pulse cycle duration and magnetic field, allow the (1,1) singlet-triplet relaxation time (~70 microseconds) and the (0,2) singlet-triplet splitting to be measured. The use of charge sensing rather than current measurement allows long relaxation times to be readily probed.

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preprint2004arXiv

Spin-dependent transport in molecular tunnel junctions

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while maintaining spin coherence. An analysis of the voltage and temperature dependence of the data suggests that the spin-coherent transport signals can be degraded by localized states in the molecular barriers.

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preprint2002arXiv

Measurements of strongly-anisotropic g-factors for spins in single quantum states

We have measured the full angular dependence, as a function of the direction of magnetic field, for the Zeeman splitting of individual energy states in copper nanoparticles. The g-factors for spin splitting are highly anisotropic, with angular variations as large as a factor of five. The angular dependence fits well to ellipsoids. Both the principal-axis directions and g-factor magnitudes vary between different energy levels within one nanoparticle. The variations agree quantitatively with random-matrix theory predictions which incorporate spin-orbit coupling.

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preprint2001arXiv

Studies of spin-orbit scattering in noble-metal nanoparticles using energy level tunneling spectroscopy

The effects of spin-orbit scattering on discrete electronic energy levels are studied in copper, silver, and gold nanoparticles. Level-to-level fluctuations of the effective $g$-factor for Zeeman splitting are characterized, and the statistics are found to be well-described by random matrix theory predictions. The strength of spin-orbit scattering increases with atomic number and also varies between nanoparticles made of the same metal. The spin-orbit scattering rates in the nanoparticles are in order-of-magnitude agreement with bulk measurements on disordered samples.

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