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Researcher profile

X. -G. Zhang

X. -G. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2021arXiv

Universal quantum operation of spin-3/2 Blume-Capel chains

We propose a logical qubit based on the Blume-Capel model: a higher spin generalization of the Ising chain and which allows for an on-site anisotropy preserving rotational invariance around the Ising axis. We show that such a spin-3/2 Blume-Capel model can also support localized Majorana bound states at the ends of the chain. Inspired by known braiding protocols of these Majorana bound states, upon appropriate manipulation of the system parameters, we demonstrate a set of universal gate operations which act on qubits encoded in the doubly degenerate ground states of the chain.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Active control of magnetoresistance of organic spin valves using ferroelectricity

Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

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preprint2014arXiv

Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

0 citations0 reviewsNo code linkedOpen access