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X. Chi

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cond-mat cond-mat.mtrl-sci cond-mat.str-el

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preprint2016arXiv

Controlling Kondo-like Scattering at the SrTiO3-based Interfaces

The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.

preprint2004arXiv

Ultrafast Conductivity Dynamics in Pentacene Probed using Terahertz Spectroscopy

We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers with picosecond resolution. The pentacene crystals were excited at 3.0 eV which is above the bandgap of ~2.2 eV and the induced change in the far-infrared transmission was measured. At 30 K, the carrier mobility is mu ~ 0.4 cm^2/Vs and decreases to mu ~ 0.2 cm^2/Vs at room temperature. The transient terahertz signal reveals the presence of free carriers that are trapped on the timescale of a few ps or less, possibly through the formation of excitons, small polarons, or trapping by impurities.

preprint2003arXiv

Limit of Field Effect Mobility on Pentacene Single Crystal

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between trapped and free carriers, from Ea = 0.143eV, we find the number of free carriers is only 0.4% of the total number of injected carriers. Along with effective mobility ~ 0.3 cm2/Vs this gives the intrinsic free carrier mobility of ~75 cm2/Vs.