Researcher profile

Wu Lu

Wu Lu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2013arXiv

Achieving Both High Power and Energy Density in Electrochemical Supercapacitors with Nanoporous Graphene Materials

Supercapacitors, based on the fast ion transportation, are specialized to provide high power, long stability, and efficient energy storage with highly porous electrode materials. However, their low energy density and specific capacitance prevent them from many applications that require long duration. Using a scalable nanoporous graphene synthesis method involving a simple annealing process in hydrogen, here we show graphene supercapacitors capable of achieving a high energy density comparable to what Li-ion batteries can offer, but a much higher power density. Ultra-high specific gravimetric and volumetric capacitances are achieved with highly porous graphene electrodes. Moreover, the supercapacitors assembled with graphene electrodes show excellent stability. Our results demonstrate that by synthesizing graphene materials with an ideal pore size, uniformity, and good ion accessibility, the performance of supercapacitors can be revolutionized.

preprint2013arXiv

Graphene based Supercapacitors with Improved Specific Capacitance and Fast Charging Time at High Current Density

Graphene is a promising material for energy storage, especially for high performance supercapacitors. For real time high power applications, it is critical to have high specific capacitance with fast charging time at high current density. Using a modified Hummer's method and tip sonication for graphene synthesis, here we show graphene-based supercapacitors with high stability and significantly-improved electrical double layer capacitance and energy density with fast charging and discharging time at a high current density, due to enhanced ionic electrolyte accessibility in deeper regions. The discharge capacitance and energy density values, 195 Fg-1 and 83.4 Whkg-1, are achieved at a current density of 2.5 Ag-1. The time required to discharge 64.18 Whkg-1 at 5 A/g is around 25 sec. At 7.5 Ag-1 current density, the cell can deliver a specific capacitance of about 137 Fg-1 and maintain 98 % of its initial value after 10,000 cycles, suggesting that the stable performance of supercapacitors at high current rates is suitable for fast charging-discharging applications. We attribute this superior performance to the highly porous nature of graphene prepared with minimum restacking due to crimple nature wrinkles and the improved current collecting method.

preprint2013arXiv

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

preprint2013arXiv

Low frequency noise in chemical vapor deposited MoS2

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.