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Researcher profile

Wolter Siemons

Wolter Siemons contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

7 published item(s)

preprint2015arXiv

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film

The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent ex situ in-plane electronic transport experiments at all temperatures, in situ scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties for catalysis, oxide electronics and electrochemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High temperature magnetic insulating phase in ultrathin La0.67Sr0.33MnO3 films

We present a study of the thickness dependence of magnetism and electrical conductivity in ultra thin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature (TC) increased, indicating a magnetic insulating phase at room temperature. These samples have a TC of about 560 K with a significant saturation magnetization of 1.2 +- 0.2 muB/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n< 10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

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preprint2011arXiv

Temperature Driven Structural Phase Transition in Tetragonal-Like BiFeO3

Highly-strained BiFeO3 exhibits a &#34;tetragonal-like, monoclinic&#34; crystal structure found only in epitaxial films (with an out-of-plane lattice parameter exceeding the in-plane value by >20%). Previous work has shown that this phase is properly described as a M$_{C}$ monoclinic structure at room temperature [with a (010)$_{pc}$ symmetry plane, which contains the ferroelectric polarization]. Here we show detailed temperature-dependent x-ray diffraction data that evidence a structural phase transition at ~100C to a high-temperature M$_{A}$ phase [&#34;tetragonal-like&#34; but with a (1-10)$_{pc}$ symmetry plane]. These results indicate that the ferroelectric properties and domain structures of strained BiFeO$_3$ will be strongly temperature dependent.

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preprint2010arXiv

Built-in and induced polarization across LaAlO$_3$/SrTiO$_3$ heterojunctions

Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. In ultra thin film form however the polar crystals are expected to remain stable without necessitating surface reconstructions, yet the built-in potential has eluded observation. Here we present evidence of a built-in potential across polar \lao ~thin films grown on \sto ~substrates, a system well known for the electron gas that forms at the interface. By performing electron tunneling measurements between the electron gas and a metallic gate on \lao ~we measure a built-in electric field across \lao ~of 93 meV/Å. Additionally, capacitance measurements reveal the presence of an induced dipole moment near the interface in \sto, illuminating a unique property of \sto ~substrates. We forsee use of the ionic built-in potential as an additional tuning parameter in both existing and novel device architectures, especially as atomic control of oxide interfaces gains widespread momentum.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films

SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 K to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit ($ZT$) was measured to be 0.28 at 873 K at a carrier concentration of $2.5\times10^{21}$ cm$^{-3}$.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Tetragonal CuO: A new end member of the 3d transition metal monoxides

Monoclinic CuO is anomalous both structurally as well as electronically in the 3$d$ transition metal oxide series. All the others have the cubic rock salt structure. Here we report the synthesis and electronic property determination of a tetragonal (elongated rock salt) form of CuO created using an epitaxial thin film deposition approach. In situ photoelectron spectroscopy suggests an enhanced charge transfer gap $Δ$ with the overall bonding more ionic. As an end member of the 3d transition monoxides, its magnetic properties should be that of a high $T_N$ antiferromagnet.

0 citations0 reviewsNo code linkedOpen access