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Gertjan Koster

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elphysics.app-phcond-mat.mes-hallquant-ph

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14 publications

preprint2020arXiv

Atomic Layer Deposition of SiO2_2-GeO2_2 multilayers

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO2_{2} thin films, by itself or in combination with SiO2_{2}, has not been widely investigated yet. Here we report the ALD growth of SiO2_{2}/GeO2_{2} multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.

Open access
preprint2020arXiv

Single-source, solvent-free, room temperature deposition of black γγ-CsSnI3_3 films

The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black γγ-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black γγ - CsSnI3 thin films is reported. This has been done by fabricating a solid target by completely solvent-free mixing of CsI and SnI2 powders and isostatic pressing. By controlled laser ablation of the solid target on an arbitrary substrate at room temperature, the formation of CsSnI3 thin films with optimal optical properties is demonstrated. The films present a band gap of 1.32 eV, a sharp absorption edge and near-infrared photoluminescence emission. These properties and X-ray diffraction of the thin films confirmed the formation of the orthorhombic (B-γγ) perovskite phase. The thermal stability of the phase was ensured by applying in situ an Al2O3_3 capping layer. This work demonstrates the potential of pulsed laser deposition as a volatility-insensitive single-source growth technique of halide perovskites and represents a critical step forward in the development and future scalability of inorganic lead-free halide perovskites.

Open access
preprint2019arXiv

Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering

We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.

Open access
preprint2019arXiv

Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with X-Rays diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

Open access
preprint2016arXiv

Epitaxial growth of complex oxides on silicon by enhanced surface diffusion in large area pulsed laser deposition

Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large area Pulsed Laser Deposition (PLD) setup. We study and show the results of the effect of an additional SrRuO3 buffer layer on the growth temperature dependent structural and magnetic properties of LSMO films. With the introduction of a thin SrRuO3 layer on top of the buffer stack, LSMO films show ferromagnetic behaviour for growth temperatures as low as 250C. We suggest that occurrence of epitaxial crystal growth of LSMO at these low growth temperatures can be understood by an improved surface diffusion, which ensures sufficient intermixing of surface species for formation of the correct phase. This intermixing is necessary because the full plume is collected on the 4" wafer resulting in a compositional varying flux of species on the wafer, in contrast to small scale experiments.

Open access
preprint2016arXiv

Gate-tunable transport properties of in-situ capped Bi2_2Te3_3 topological insulator thin films

Combining the ability to prepare high-quality, intrinsic Bi2_2Te3_3 topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi2_2Te3_3 thin films. Using a back-gate, the carrier density is tuned by a factor of ∼7\sim 7 in Al2_2O3_3 capped Bi2_2Te3_3 sample and by a factor of ∼2\sim 2 in Te capped Bi2_2Te3_3 films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.

Open access
preprint2016arXiv

Interface Engineering in La0.67Sr0.33MnO3-SrTiO3 Heterostructures

Interface engineering is an extremely useful tool for systematically investigating materials and the various ways materials interact with each other. We describe different interface engineering strategies designed to reveal the origin of the electric and magnetic dead-layer at La0.67Sr0.33MnO3 interfaces. La0.67Sr0.33MnO3 is a key example of a strongly correlated peroskite oxide material in which a subtle balance of competing interactions gives rise to a ferromagnetic metallic groundstate. This balance, however, is easily disrupted at interfaces. We systematically vary the dopant profile, the disorder and the oxygen octahedra rotations at the interface to investigate which mechanism is responsible for the dead layer. We find that the magnetic dead layer can be completely eliminated by compositional interface engineering such that the polar discontinuity at the interface is removed. This, however, leaves the electrical dead-layer largely intact. We find that deformations in the oxygen octahedra network at the interface are the dominant cause for the electrical dead layer.

Open access
preprint2016arXiv

Tunable and temporally stable ferroelectric imprint through polarization coupling

Here we demonstrate a method to tune ferroelectric imprint, which is stable in time, based on the coupling between the non-switchable polarization of ZnO and switchable polarization of PbZrxTi(1-x)O3. SrRuO3/PbZrxTi(1-x)O3 /ZnO/SrRuO3 heterostructures were grown with different ZnO thicknesses. It is shown that the coercive voltages and ferroelectric imprint varies linearly with the thickness of ZnO. It is also demonstrated that the ferroelectric imprint remains stable with electric field cycling and electric field stress assisted aging.

Open access
preprint2012arXiv

High temperature magnetic insulating phase in ultrathin La0.67Sr0.33MnO3 films

We present a study of the thickness dependence of magnetism and electrical conductivity in ultra thin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature (TC) increased, indicating a magnetic insulating phase at room temperature. These samples have a TC of about 560 K with a significant saturation magnetization of 1.2 +- 0.2 muB/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n< 10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

Open access
preprint2012arXiv

Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO3 substrates play an important role.

Open access
preprint2012arXiv

Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces

Perovskite oxide heteroepitaxy receives much attention because of the possibility to com- bine the diverse functionalities of perovskite oxide building blocks. A general boundary con- dition for the epitaxy is the presence of polar discontinuities at heterointerfaces. These polar discontinuities result in reconstructions, often creating new functionalities at the interface. However, for a significant number of materials these reconstructions are unwanted as they alter the intrinsic materials properties at the interface. Therefore, a strategy to eliminate this reconstruction of the polar discontinuity at the interfaces is required. We show that the use of compositional interface engineering can prevent the reconstruction at the La0.67Sr0.33MnO3/SrTiO3 (LSMO/STO) interface. The polar discontinuity at this interface can be removed by the insertion of a single La0.33Sr0.67O layer, resulting in improved interface magnetization and electrical conductivity.

Open access
preprint2010arXiv

Uniaxial contribution to the magnetic anisotropy of La0.67Sr0.33MnO3 thin films induced by orthorhombic crystal structure

La0.67Sr0.33MnO3 (LSMO) thin films under compressive strain have an orthorhombic symmetry with (1-10)o and (001)o in-plane orientations. (The subscript o denotes the orthorhombic symmetry.) Here, we grew LSMO on cubic (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) substrates and observed a uniaxial contribution to the magnetic anisotropy which is related to the orthorhombic crystal structure. Since the lattice mismatch is equal in the two directions, the general understanding of anisotropy in LSMO, which relates the uniaxial anisotropy to differences in strain, cannot explain the results. These findings suggest that the oxygen octahedra rotations associated with the orthorhombic structure, possibly resulting in different Mn-O-Mn bond angles and therefore a change in magnetic coupling between the [1-10]o and [001]o directions, determine the anisotropy. We expect these findings to lead to a better understanding of the microscopic origin of the magnetocrystalline anisotropy in LSMO.

Open access
preprint2008arXiv

Tetragonal CuO: A new end member of the 3d transition metal monoxides

Monoclinic CuO is anomalous both structurally as well as electronically in the 3dd transition metal oxide series. All the others have the cubic rock salt structure. Here we report the synthesis and electronic property determination of a tetragonal (elongated rock salt) form of CuO created using an epitaxial thin film deposition approach. In situ photoelectron spectroscopy suggests an enhanced charge transfer gap ΔΔ with the overall bonding more ionic. As an end member of the 3d transition monoxides, its magnetic properties should be that of a high TNT_N antiferromagnet.

Open access

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