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Wenhui Xu

Wenhui Xu contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Effective Actor-centric Human-object Interaction Detection

While Human-Object Interaction(HOI) Detection has achieved tremendous advances in recent, it still remains challenging due to complex interactions with multiple humans and objects occurring in images, which would inevitably lead to ambiguities. Most existing methods either generate all human-object pair candidates and infer their relationships by cropped local features successively in a two-stage manner, or directly predict interaction points in a one-stage procedure. However, the lack of spatial configurations or reasoning steps of two- or one- stage methods respectively limits their performance in such complex scenes. To avoid this ambiguity, we propose a novel actor-centric framework. The main ideas are that when inferring interactions: 1) the non-local features of the entire image guided by actor position are obtained to model the relationship between the actor and context, and then 2) we use an object branch to generate pixel-wise interaction area prediction, where the interaction area denotes the object central area. Moreover, we also use an actor branch to get interaction prediction of the actor and propose a novel composition strategy based on center-point indexing to generate the final HOI prediction. Thanks to the usage of the non-local features and the partly-coupled property of the human-objects composition strategy, our proposed framework can detect HOI more accurately especially for complex images. Extensive experimental results show that our method achieves the state-of-the-art on the challenging V-COCO and HICO-DET benchmarks and is more robust especially in multiple persons and/or objects scenes.

preprint2020arXiv

Critical polynomials in the nonplanar and continuum percolation models

Exact or precise thresholds have been intensively studied since the introduction of the percolation model. Recently the critical polynomial $P_{\rm B}(p,L)$ was introduced for planar-lattice percolation models, where $p$ is the occupation probability and $L$ is the linear system size. The solution of $P_{\rm B} = 0$ can reproduce all known exact thresholds and leads to unprecedented estimates for thresholds of unsolved planar-lattice models. In two dimensions, assuming the universality of $P_{\rm B}$, we use it to study a nonplanar lattice model, i.e., the equivalent-neighbor lattice bond percolation, and the continuum percolation of identical penetrable disks, by Monte Carlo simulations and finite-size scaling analysis. It is found that, in comparison with other quantities, $P_{\rm B}$ suffers much less from finite-size corrections. As a result, we obtain a series of high-precision thresholds $p_c(z)$ as a function of coordination number $z$ for equivalent-neighbor percolation with $z$ up to O$(10^5)$, and clearly confirm the asymptotic behavior $zp_c-1 \sim 1/\sqrt{z}$ for $z \rightarrow \infty$. For the continuum percolation model, we surprisingly observe that the finite-size correction in $P_{\rm B}$ is unobservable within uncertainty O$(10^{-5})$ as long as $L \geq 3$. The estimated threshold number density of disks is $ρ_c = 1.436 325 05(10)$, slightly below the most recent result $ρ_c = 1.436 325 45(8)$ of Mertens and Moore obtained by other means. Our work suggests that the critical polynomial method can be a powerful tool for studying nonplanar and continuum systems in statistical mechanics.

preprint2020arXiv

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.