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Researcher profile

Wenguang Zhu

Wenguang Zhu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-phphysics.chem-phquant-ph

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Published work

12 published item(s)

preprint2022arXiv

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

The electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations, which may pose significant challenges to their applications in electronic or optoelectronic devices. A 2D material couples with its environment through two mechanisms: local chemical coupling and nonlocal dielectric screening effects. The local chemical coupling is often difficult to predict or control experimentally. Nonlocal dielectric screening, on the other hand, can be tuned by choosing the substrates or layer thickness in a controllable manner. Therefore, a compelling 2D electronic material should offer band edge states that are robust against local chemical coupling effects. Here it is demonstrated that the recently synthesized MoSi$_2$N$_4$ is an ideal 2D semiconductor with robust band edge states protected from capricious environmental chemical coupling effects. Detailed many-body perturbation theory calculations are carried out to illustrate how the band edge states of MoSi$_2$N$_4$ are shielded from the direct chemical coupling effects, but its quasiparticle and excitonic properties can be modulated through the nonlocal dielectric screening effects. This unique property, together with the moderate band gap and the thermodynamic and mechanical stability of this material, paves the way for a range of applications of MoSi$_2$N$_4$ in areas including energy, 2D electronics, and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Remarkable band gap renormalization via dimensionality of the layered material C3B

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle band gap of 2.55 eV for monolayer C3B, the calculated quasiparticle band gap of perfectly stacked bulk phase C3B is as small as 0.17 eV. Therefore, our results suggest that layered material C3B exhibits a remarkably large band gap renormalization of over 2.3 eV due to the interlayer coupling and screening effects, providing a single material with an extraordinary band gap tunability. The quasiparticle band gap of monolayer C3B is also over 1.0 eV larger than that of C3N, a closely related two-dimensional semiconductor. Detailed inspections of the near-edge electronic states reveal that the conduction and valence band edges of C3B are formed by out-of-plane and in-plane electronic states, respectively, suggesting an interesting possibility of tuning the band edges of such layered material separately by modulating the in-plane and out-of-plane interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic properties of doped Bi2Se3 are studied using first-principles calculations within density functional theory. Our results show that Bi substitutional sites are energetically more favorable than interstitial sites for single impurities. Detailed electronic structure analysis reveals that Cr and Fe doped materials are still insulating in the bulk but the intrinsic band gap of Bi2Se3 is substantially reduced due to the strong hybridization between the d states of the dopants and the p states of the neighboring Se atoms. The calculated magnetic coupling suggests that Cr doped Bi2Se3 is possible to be both ferromagnetic and insulating, while Fe doped Bi2Se3 tends to be weakly antiferromagnetic.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

CO Oxidation Facilitated by Robust Surface States on Au-Covered Topological Insulators

Surface states refer to electronic states emerging as a solid material terminates at a surface, and can be present in many systems. Despite their spatial proximity to material surfaces, surface states have been largely overlooked in fundamental understanding of surface catalysis and potential real-world applications, because of their vulnerability to local impurities or defects. In contrast, the recently discovered three-dimensional topological insulators (3DTI) have exceptionally robust metallic surface states that are topologically protected against surface contamination and imperfection. The robust topological surface state(s) (TSS) provides a perfect platform for exploiting novel physical phenomena and potential applications of surface states in less stringent environments. Here we employ first-principles density functional theory to demonstrate that the TSS can play a vital and elegant role in facilitating surface reactions by serving as an effective electron bath. We use CO oxidation on gold-covered Bi2Se3 as a prototype example, and first show that the TSS is preserved when a stable ultrathin Au film is deposited onto a Bi-terminated Bi2Se3 substrate. Furthermore, the TSS can significantly enhance the adsorption energy of both CO and O2 molecules, by promoting different directions of electron transfer. For CO, the TSS accepts electrons from the CO-Au system, thereby decreasing the undesirable occupation of the CO antibonding states. For O2, the TSS donates the needed electrons to promote the molecule towards dissociative adsorption. The present study adds a new arena to the technological potentials of 3DTI, and the central concept of TSS as an electron bath as revealed here may lead to new design principles beyond the conventional d-band theory of heterogeneous catalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modeling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates, and external gate voltages. We predict that LaAuO$_3$ bilayers have a topologically-nontrivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin-Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly-flat topologically-nontrivial bands found in $e_g$ systems are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Possible interaction driven topological phases in (111) bilayers of LaNiO3

We use the variational mean-field approach to systematically study the phase diagram of a bilayer heterostructure of the correlated transition metal oxide LaNiO3, grown along the (111) direction. The Ni 3+ ions with d7 (or eg1) configuration form a buckled honeycomb lattice. We show that as a function of the strength of the on-site interactions, various topological phases emerge. In the presence of a reasonable size of the Hund's coupling, as the correlation is tuned from intermediate to strong, the following sequence of phases is found: (1) a Dirac half-semimetal phase, (2) a quantum anomalous hall insulator (QAHI) phase with Chern number one, and (3) a ferromagnetic nematic phase breaking the lattice point group symmetry. The spin-orbit couplings and magnetism are both dynamically generated in the QAHI phase.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Adsorbate-induced Restructuring of Pb mesas Grown on Vicinal Si(111) in the Quantum Regime

Using scanning tunneling microscopy and spectroscopy, we demonstrate that the adsorption of a minute amount of Cs on a Pb mesa grown in the quantum regime can induce dramatic morphological changes of the mesa, characterized by the appearance of populous monatomic-layer-high Pb nano-islands on top of the mesa. The edges of the Pb nano-islands are decorated with Cs adatoms, and the nano-islands preferentially nucleate and grow on the quantum mechanically unstable regions of the mesa. Furthermore, first-principles calculations within density functional theory show that the Pb atoms forming these nano-islands were expelled by the adsorbed Cs atoms via a kinetically accessible place exchange process when the Cs atoms alloyed into the top layer of the Pb mesa.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Contrasting Behavior of Carbon Nucleation in the Initial Stages of Graphene Epitaxial Growth on Stepped Metal Surfaces

Using first-principles calculations within density functional theory, we study the energetics and kinetics of carbon nucleation in the early stages of epitaxial graphene growth on three representative stepped metal surfaces: Ir(111), Ru(0001), and Cu(111). We find that on the flat surfaces of Ir(111) and Ru(0001), two carbon atoms repel each other, while they prefer to form a dimer on Cu(111). Moreover, the step edges on Ir and Ru surfaces cannot serve as effective trapping centers for single carbon adatoms, but can readily facilitate the formation of carbon dimers. These contrasting behaviors are attributed to the delicate competition between C-C bonding and C-metal bonding, and a simple generic principle is proposed to predict the nucleation sites of C adatoms on many other metal substrates with the C-metal bond strengths as the minimal inputs.

0 citations0 reviewsNo code linkedOpen access