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Wen-Yi Tong

Wen-Yi Tong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hallcond-mat.str-el

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Published work

10 published item(s)

preprint2022arXiv

First-principles investigation of interfacial reconstruction in epitaxial SrTiO$_3$/Si photocathodes

Epitaxial SrTiO$_3$ (STO) on Si is nowadays the benchmark initial platform for the further addition of functional oxides on Si. Starting the growth of STO on a Sr-passivated Si substrate with 1/2 monolayer (ML) Sr coverage and a (1 $\times$ 2) reconstructed Si surface with rows of Si dimers, the final STO/Sr/Si stack exhibits 1 ML Sr coverage and a (1 $\times$ 1) Si surface without dimer. Using first-principles density functional theory calculations, we investigate how the interface evolves from 1/2 ML to 1 ML Sr coverage, concluding that the latter is indeed most stable and that the reconstruction of the interface takes place during the early stage of the layer-by-layer deposition. Going further, we determine the band alignment of the final stable interface and assess its potential interest as photocathode for water reduction.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Missed ferroelectricity in methylammonium lead iodide

Methylammonium lead iodide, as related organometal halide perovskites, emerged recently as a particularly attractive material for photovoltaic applications. The origin of its appealing properties is sometimes assigned to its potential ferroelectric character, which remains however a topic of intense debate. Here, we rationalize from first-principles calculations how the spatial arrangement of methylammonium polar molecules is progressively constrained by the subtle interplay between their tendency to bond with the inorganic framework and the appearance of iodine octahedra rotations inherent to the perovskite structure. The disordered tetragonal phase observed at room temperature is paraelectric. We show that it should a priori become ferroelectric but that iodine octahedra rotations drive the system toward an antipolar orthorhombic ground state, making it a missed ferroelectric.

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preprint2021arXiv

Exotic dielectric behaviors induced by pseudo-spin texture in magnetic twisted bilayer

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate moire pattern and uncommon electronic behaviors may appear due to the absence of phase coherence. Such system is extremely sensitive to further twist and many intriguing phenomena will occur. In this work, based on first-principles calculations we show that, for further twist near 30 degree, there could induce dramatically different dielectric behaviors of electron between left and right twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist, which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e. the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moire systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Concept of the half-valley-metal and quantum anomalous valley Hall effect

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed matter physics, i.e. valleytronics, whose development is exactly following that of spintronics which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics with one spin channel is conducting whereas the other is insulating, we propose the concept of half-valley-metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin-polarized even when spin-orbit interactions are considered. Combining first-principles calculations with two-band kp model, the physical mechanism to form the half-valley-metal is illuminated. Taking the ferrovalley H-FeCl2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect half-valley-metal state. In addition, we find that in the so obtained half-valley-metal state, the conduction valley demonstrates Dirac cone-like linear energy dispersion. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys follow same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess non-zero Chern number and consequently intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

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preprint2019arXiv

Rashba spin-splitting in ferroelectric oxides: from rationalizing to engineering

Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are typically not suitable FERSC candidates. By rationalizing how this limitation can be by-passed through band engineering of the electronic structure in layered perovskites, we identify the Bi$_2$WO$_6$ Aurivillius crystal as the first robust ferroelectric with large and reversible Rashba spin-splitting, that can even be substantially doped without losing its ferroelectric properties. Importantly, we highlight that a unidirectional spin-orbit field arises in layered Bi$_2$WO$_6$, resulting in a protection against spin-decoherence.We highlight moreover that a unidirectional spin-orbit field arises in Bi$_2$WO$_6$, in which the spin-texture is so protected against spin-decoherence.

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preprint2016arXiv

Concepts of Ferrovalley Material and Anomalous Valley Hall Effect

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization in electronics, as well as ferromagnetic materials with spontaneous spin polarization in spintronics, here we introduce a new member of ferroic-family, i.e. a ferrovalley material with spontaneous valley polarization. Combining a two-band kp model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal-d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and more interestingly, anomalous valley Hall effect. On account of the latter, a series of functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory, valley filter, are contemplated for valleytronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field

Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful identifying different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures. Taking the iron monolayer as a matrix, we propose several interesting iron nanostructures with dramatically different magnetic properties. Such nanostructures could exhibit strong magnetoelectric effect. Our work may open a new avenue to the artificial design of electrically controlled magnetic devices.

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preprint2015arXiv

First-principles studies of multiferroic and magnetoelectric materials

Multiferroics are materials where two or more ferroic orders coexist owing to the interplay between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of multiferroics literature in recent years demon-strates the fast growing interest in this field. In these studies, the first-principles calculation has played a pioneer role in the experiment explanation, mechanism discovery and prediction of novel multiferroics or magnetoelectric materials. In this review, we discuss, by no means comprehensively, the extensive applications and successful achievements of first-principles approach in the study of multiferroicity, magnetoelectric effect and tunnel junc-tions. In particular, we introduce some our recently developed methods, e.g., the orbital selective external potential (OSEP) method, which prove to be powerful tools in the finding of mechanisms responsible for the intriguing phe-nomena occurred in multiferroics or magnetoelectric materials. We also summarize first-principles studies on three types of electric control of magnetism, which is the common goal of both spintronics and multiferroics. Our review offers in depth understanding on the origin of ferroelectricity in transition metal oxides, and the coexistence of fer-roelectricity and ordered magnetism, and might be helpful to explore novel multiferroic or magnetoelectric materi-als in the future.

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preprint2015arXiv

Magnetic Ordering Induced Giant Optical Property Change in Tetragonal BiFeO3

Magnetic ordering, as one of the most important characteristics in magnetic materials, could have significant influence on the band structure, spin dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the compressive strained tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with the minimal one-band tight-binding models, we find that when BFO changes from C1-type antiferromagnetic (AFM) phase to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by the two-center Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on energy band dispersion dramatically changes the optical properties of tetragonal BFO. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-type AFM case. Finally, we propose a practical way to distin-guish the C1- and G-type AFM of BFO using the optical method, which might be of great importance in next-generation information storage technologies and widens the potential application of BFO to optical switch.

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preprint2014arXiv

Spin-dependent optical response of multiferroic EuO

Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a way to obtain the spin-dependent optical response of the magnetic materials, which is helpful to verify the spin-dependent band structure of EuO. Significantly different optical responses from spin-up and spin-down channels are obtained in both linear and nonlinear cases, making it possible to distinguish contributions from different spin-channels in the optical absorption spectra if spin-flip process can be neglected. In addition, the red-shift of the absorption edge from paramagnetic to ferromagnetic ordering is explained by exchange interactions. Using such method, we have also compared the optical properties of multiferroic EuO which is induced by strong epitaxial strain. Our results show that from tensile to compressive strain, the blue-shift of the leading absorption peaks in the optical spectra, the red-shift of the optical band gap in spin-up state can be observed, consistent to the energy difference between spin-splitting orbits. The spin-dependent nonlinear optical properties reveal that in the infrared and visible light region, the contributions to second-harmonic generation (SHG) susceptibilities are mainly from spin-majority channels. In addition, the strain effect is also discussed. With the increase of epitaxial strain, the larger energy shift of the leading absorption peaks, and the more remarkable nonlinear optical response can be obtained.

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