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Researcher profile

Wen-Yi Tong

Wen-Yi Tong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.comp-ph

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Published work

5 published item(s)

preprint2022arXiv

First-principles investigation of interfacial reconstruction in epitaxial SrTiO$_3$/Si photocathodes

Epitaxial SrTiO$_3$ (STO) on Si is nowadays the benchmark initial platform for the further addition of functional oxides on Si. Starting the growth of STO on a Sr-passivated Si substrate with 1/2 monolayer (ML) Sr coverage and a (1 $\times$ 2) reconstructed Si surface with rows of Si dimers, the final STO/Sr/Si stack exhibits 1 ML Sr coverage and a (1 $\times$ 1) Si surface without dimer. Using first-principles density functional theory calculations, we investigate how the interface evolves from 1/2 ML to 1 ML Sr coverage, concluding that the latter is indeed most stable and that the reconstruction of the interface takes place during the early stage of the layer-by-layer deposition. Going further, we determine the band alignment of the final stable interface and assess its potential interest as photocathode for water reduction.

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preprint2022arXiv

Missed ferroelectricity in methylammonium lead iodide

Methylammonium lead iodide, as related organometal halide perovskites, emerged recently as a particularly attractive material for photovoltaic applications. The origin of its appealing properties is sometimes assigned to its potential ferroelectric character, which remains however a topic of intense debate. Here, we rationalize from first-principles calculations how the spatial arrangement of methylammonium polar molecules is progressively constrained by the subtle interplay between their tendency to bond with the inorganic framework and the appearance of iodine octahedra rotations inherent to the perovskite structure. The disordered tetragonal phase observed at room temperature is paraelectric. We show that it should a priori become ferroelectric but that iodine octahedra rotations drive the system toward an antipolar orthorhombic ground state, making it a missed ferroelectric.

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preprint2021arXiv

Exotic dielectric behaviors induced by pseudo-spin texture in magnetic twisted bilayer

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate moire pattern and uncommon electronic behaviors may appear due to the absence of phase coherence. Such system is extremely sensitive to further twist and many intriguing phenomena will occur. In this work, based on first-principles calculations we show that, for further twist near 30 degree, there could induce dramatically different dielectric behaviors of electron between left and right twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist, which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e. the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moire systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.

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preprint2020arXiv

Concept of the half-valley-metal and quantum anomalous valley Hall effect

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed matter physics, i.e. valleytronics, whose development is exactly following that of spintronics which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics with one spin channel is conducting whereas the other is insulating, we propose the concept of half-valley-metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin-polarized even when spin-orbit interactions are considered. Combining first-principles calculations with two-band kp model, the physical mechanism to form the half-valley-metal is illuminated. Taking the ferrovalley H-FeCl2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect half-valley-metal state. In addition, we find that in the so obtained half-valley-metal state, the conduction valley demonstrates Dirac cone-like linear energy dispersion. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys follow same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess non-zero Chern number and consequently intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

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preprint2019arXiv

Rashba spin-splitting in ferroelectric oxides: from rationalizing to engineering

Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are typically not suitable FERSC candidates. By rationalizing how this limitation can be by-passed through band engineering of the electronic structure in layered perovskites, we identify the Bi$_2$WO$_6$ Aurivillius crystal as the first robust ferroelectric with large and reversible Rashba spin-splitting, that can even be substantially doped without losing its ferroelectric properties. Importantly, we highlight that a unidirectional spin-orbit field arises in layered Bi$_2$WO$_6$, resulting in a protection against spin-decoherence.We highlight moreover that a unidirectional spin-orbit field arises in Bi$_2$WO$_6$, in which the spin-texture is so protected against spin-decoherence.

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