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Weiyan Lin

Weiyan Lin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Direct visualization of percolating metal-insulator transition in V2O3 using scanning microwave impedance microscopy

Using the extensively studied V2O3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G, which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against p, suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V2O3 during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.

preprint2022arXiv

Influences of the dissipative topological edge state on quantized transport in MnBi2Te4

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.