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Weida Hu

Weida Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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astro-ph.GAcond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.opticsastro-ph.COphysics.ins-det

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Published work

12 published item(s)

preprint2026arXiv

Galaxies in the Epoch of Reionization Are All Bark and No Bite -- Plenty of Ionizing Photons, Low Escape Fractions

Early results from JWST suggest that epoch-of-reionization (EoR) galaxies produce copious ionizing photons, which, if they escape efficiently, could cause reionization to occur too early. We study this problem using \jwst\ imaging and prism spectroscopy for 412 galaxies at 4.5 < z < 9.0. We fit these data simultaneously with stellar-population and nebular-emission models that include a parameter for the fraction of ionizing photons that escape the galaxy, $f_\mathrm{esc}$. We find that the ionization production efficiency, $ξ_\mathrm{ion}$ = Q(H) / L(UV), increases with redshift and decreasing UV luminosity, but shows significant scatter, $σ( \log ξ_\mathrm{ion})$ = 0.3 dex. The inferred escape fractions averaged over the population are low, ranging from $\langle f_\mathrm{esc} \rangle$ = $2.6\pm 1.4$\% at 6 < z < 9 to $6.5\pm 2.2$\% at 4.5 < z < 6 with weak or no indication of evolution with redshift. This implies that in our models most of the ionizing photons need to be absorbed to account for the nebular emission. We compute the impact of our results on reionization, including the distributions for $ξ_\mathrm{ion}$ and $f_\mathrm{esc}$, and the evolution and uncertainty of the UV luminosity function. Considering galaxies brighter than M(UV) < -16 mag, we would produce an IGM hydrogen-ionized fraction of $x_e = 0.5$ at 5.3 < z < 5.8, possibly too late compared to constraints from from QSO sightlines. Including fainter galaxies, M(UV) < -14 mag, we obtain $x_e = 0.5$ at 6.0 < z < 8.1, fully consistent with QSO and CMB data. This implies that EoR galaxies produce plenty of ionizing photons, but these do not efficiently escape. This may be a result of high gas column densities combined with burstier star-formation histories, which limit the time massive stars are able to clear channels through the gas for ionizing photons to escape.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

LAGER Ly$α$ Luminosity Function at $z\sim7$, Implications for Reionization

We present a new measurement of the Ly$α$ luminosity function at redshift $z=6.9$, finding moderate evolution from $z=5.7$ that is consistent with a fully or largely ionized $z\sim7$ intergalactic medium. Our result is based on four fields of the LAGER (Lyman Alpha Galaxies in the Epoch of Reionization) project. Our survey volume of $6.1\times10^{6}$ Mpc$^{3}$ is double that of the next largest $z\sim 7$ survey. We combine two new LAGER fields (WIDE12 and GAMA15A) with two previously reported LAGER fields (COSMOS and CDFS). In the new fields, we identify $N=95$ new $z=6.9$ Ly$α$ emitters (LAEs); characterize our survey's completeness and reliability; and compute Ly$α$ luminosity functions. The best-fit Schechter luminosity function parameters for all four LAGER fields are in good general agreement. Two fields (COSMOS and WIDE12) show evidence for a bright-end excess above the Schechter function fit. We find that the Ly$α$ luminosity density declines at the same rate as the UV continuum LF from $z=5.7$ to $z=6.9$. This is consistent with an intergalactic medium that was fully ionized as early as redshift $z\sim 7$, or with a volume-averaged neutral hydrogen fraction of $x_{HI} < 0.33$ at $1σ$.

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preprint2021arXiv

A Lyman-α protocluster at redshift 6.9

Protoclusters, the progenitors of the most massive structures in the Universe, have been identified at redshifts of up to 6.6. Besides exploring early structure formation, searching for protoclusters at even higher redshifts is particularly useful to probe the reionization. Here we report the discovery of the protocluster LAGER-z7OD1 at a redshift of 6.93, when the Universe was only 770 million years old and could be experiencing rapid evolution of the neutral hydrogen fraction in the intergalactic medium. The protocluster is identified by an overdensity of 6 times the average galaxy density, and with 21 narrowband selected Lyman-$α$ galaxies, among which 16 have been spectroscopically confirmed. At redshifts similar to or above this record, smaller protogroups with fewer members have been reported. LAGER-z7OD1 shows an elongated shape and consists of two subprotoclusters, which would have merged into one massive cluster with a present-day mass of $3.7 \times 10^{15}$ solar masses. The total volume of the ionized bubbles generated by its member galaxies is found to be comparable to the volume of the protocluster itself, indicating that we are witnessing the merging of the individual bubbles and that the intergalactic medium within the protocluster is almost fully ionized. LAGER-z7OD1 thus provides a unique natural laboratory to investigate the reionization process.

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preprint2021arXiv

New spectroscopic confirmations of Lyman-$α$ emitters at z $\sim$ 7 from the LAGER survey

We report spectroscopic confirmations of 15 Lyman-alpha galaxies at $z\sim7$, implying a spectroscopic confirmation rate of $\sim$80% on candidates selected from LAGER (Lyman-Alpha Galaxies in the Epoch of Reionization), which is the largest (24 deg$^2$) survey aimed at finding Lyman-alpha emitters (LAEs) at $z\sim7$ using deep narrow-band imaging from DECam at CTIO. LAEs at high-redshifts are sensitive probes of cosmic reionization and narrow-band imaging is a robust and effective method for selecting a large number of LAEs. In this work, we present results from the spectroscopic follow-up of LAE candidates in two LAGER fields, COSMOS and WIDE-12, using observations from Keck/LRIS. We report the successful detection of Ly$α$ emission in 15 candidates (11 in COSMOS and 4 in WIDE-12 fields). Three of these in COSMOS have matching confirmations from a previous LAGER spectroscopic follow-up and are part of the overdense region, LAGER-$z7$OD1. Additionally, two candidates that were not detected in the LRIS observations have prior spectroscopic confirmations from Magellan. Including these, we obtain a spectroscopic confirmation success rate of $\sim$$80$% for LAGER LAE candidates. Apart from Ly$α$, we do not detect any other UV nebular lines in our LRIS spectra; however, we estimate a 2$σ$ upper limit for the ratio of NV/Ly$α$, $f_{NV}/f_{Lyα} \lesssim 0.27$, which implies that ionizing emission from these sources is mostly dominated by star formation. Including confirmations from this work, a total of 33 LAE sources from LAGER are now spectroscopically confirmed. LAGER has more than doubled the sample of spectroscopically confirmed LAE sources at $z\sim7$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A large, deep 3 deg$^2$ survey of H$α$, [OIII], and [OII] emitters from LAGER: constraining luminosity functions

We present our measurements of the H$α$, [OIII], and [OII] luminosity functions as part of the Lyman Alpha Galaxies at Epoch of Reionization (LAGER) survey using our samples of 1577 $z = 0.47$ H$α$-, 3933 $z = 0.93$ [OIII]-, and 5367 $z = 1.59$ [OII]-selected emission line galaxies in a single 3 deg$^2$ CTIO/Blanco DECam pointing of the COSMOS field. Our observations reach 5$σ$ depths of $8.2\times10^{-18}$ erg s$^{-1}$ cm$^{-2}$ and comoving volumes of $(1-7)\times10^{5}$ Mpc$^3$ making our survey one of the deepest narrowband surveys. We measure the observed luminosity functions and find best-fits of $ϕ^\star = 10^{-3.16\pm0.09}$ Mpc$^{-3}$ and $L^\star = 10^{41.72\pm0.09}$ erg s$^{-1}$ for H$α$, $ϕ^\star = 10^{-2.16^{+0.10}_{-0.12}}$ Mpc$^{-3}$ and $L^\star = 10^{41.38^{+0.07}_{-0.06}}$ erg s$^{-1}$ for [OIII], and $ϕ^\star = 10^{-1.97^{+0.07}_{-0.07}}$ Mpc$^{-3}$ and $L^\star = 10^{41.66\pm0.03}$ erg s$^{-1}$ for [OII], with $α$ fixed to $-1.75$, $-1.6$, and $-1.3$, respectively. An excess of bright $> 10^{42}$ erg s$^{-1}$ [OIII] emitters is observed and may be due to AGN contamination. Dust corrections are applied assuming $A_{\rm{H}α} = 1$ mag. We also design our own empirical rest-frame $g - r$ calibration using SDSS DR12 data, test it against our $z = 0.47$ H$α$ emitters with $z$COSMOS $1$D spectra, and calibrate it for $(g - r)$ between $-0.8$ and $1.3$ mag. Dust and AGN-corrected star formation rate densities (SFRDs) are measured as $\log_{10}ρ_{\rm{SFR}}/(\rm{M}_\odot\ \rm{yr}^{-1}\ \rm{Mpc}^{-3}) = -1.63\pm0.04$, $-1.07\pm0.06$, and $-0.90\pm0.10$ for H$α$, [OIII], and [OII], respectively. We find our [OIII] and [OII] samples fully trace cosmic star formation activity at their respective redshifts in comparison to multi-wavelength SFRDs, while the H$α$ sample traces $\sim 70$ percent of the total $z = 0.47$ SFRD.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chargeable photoconductivity in Van der Waals heterojunctions

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat; in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

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preprint2016arXiv

High-performance graphene photodetector by interfacial gating

Graphene based photo-detecting has received great attentions and the performance of such detector is stretching to both ends of high sensitivity and ultra-fast response. However, limited by the current photo-gating mechanism, the price for achieving ultra-high sensitivity is sacrificing the response time. Detecting weak signal within short response time is crucial especially in applications such as optical positioning, remote sensing, and biomedical imaging. In this work, we bridge the gap between ultra-fast response and ultra-high sensitivity by employing a graphene/SiO2/lightly-doped-Si architecture with revolutionary interfacial gating mechanism. Such device is capable to detect < 1 nW signal (with responsivity of ~1000 A W-1) and the spectral response extends from visible to near-infrared. More importantly, the photoresponse time of our device has been pushed to ~400 ns. The current device structure does not need complicated fabrication process and is fully compatible with the silicon technology. This work will not only open up a route to graphene-based high performance optoelectronic devices, but also have great potential in ultra-fast weak signal detection.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trifluoroethylene) ferroelectric layer in place of the oxide layer in a traditional field effect transistor. The dark current of the photodetector is strongly suppressed by ferroelectric polarization. A high detectivity 2.21012 Jones) and photoresponsitivity (2570 A W) detector has been achieved under ZERO gate bias at a wavelength of 635 nm. Most strikingly, the band gap of few-layer MoS2 can be tuned by the ultra-high electrostatic field from the ferroelectric polarization. With this characteristic, photoresponse wavelengths of the photodetector are extended into the near infrared (0.85-1.55m). A ferroelectrics optoelectronics hybrid structure is an effective way to achieve high performance 2D electronic optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access