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Researcher profile

Weibo Gao

Weibo Gao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.opticsquant-phcond-mat.mes-hallApplicationsComputation and Language

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Published work

9 published item(s)

preprint2026arXiv

Language Hierarchization Provides the Optimal Solution to Human Working Memory Limits

Language is a uniquely human trait, conveying information efficiently by organizing word sequences in sentences into hierarchical structures. A central question persists: Why is human language hierarchical? In this study, we show that hierarchization optimally solves the challenge of our limited working memory capacity. We established a likelihood function that quantifies how well the average number of units according to the language processing mechanisms aligns with human working memory capacity (WMC) in a direct fashion. The maximum likelihood estimate (MLE) of this function, tehta_MLE, turns out to be the mean of units. Through computational simulations of symbol sequences and validation analyses of natural language sentences, we uncover that compared to linear processing, hierarchical processing far surpasses it in constraining the tehta_MLE values under the human WMC limit, along with the increase of sequence/sentence length successfully. It also shows a converging pattern related to children's WMC development. These results suggest that constructing hierarchical structures optimizes the processing efficiency of sequential language input while staying within memory constraints, genuinely explaining the universal hierarchical nature of human language.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Noise-Resistant Feature-Aware Attack Detection Using Quantum Machine Learning

Continuous-variable quantum key distribution (CV-QKD) is a quantum communication technology that offers an unconditional security guarantee. However, the practical deployment of CV-QKD systems remains vulnerable to various quantum attacks. In this paper, we propose a quantum machine learning (QML)-based attack detection framework (QML-ADF) that safeguards the security of high-rate CV-QKD systems. In particular, two alternative QML models -- quantum support vector machines (QSVM) and quantum neural networks (QNN) -- are developed to perform noise-resistant and feature-aware attack detection before conventional data postprocessing. Leveraging feature-rich quantum data from Gaussian modulation and homodyne detection, the QML-ADF effectively detects quantum attacks, including both known and unknown types defined by these distinctive features. The results indicate that all twelve distinct QML variants for both QSVM and QNN exhibit remarkable performance in detecting both known and previously undiscovered quantum attacks, with the best-performing QSVM variant outperforming the top QNN counterpart. Furthermore, we systematically evaluate the performance of the QML-ADF under various physically interpretable noise backends, demonstrating its strong robustness and superior detection performance. We anticipate that the QML-ADF will not only enable robust detection of quantum attacks under realistic deployment conditions but also strengthen the practical security of quantum communication systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

2022 Roadmap for Materials for Quantum Technologies

Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Monolithic Silicon Carbide Metalenses

Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic applications. We support the lens fabrication by optical transmission measurement and characterize the focal points of the lenses. Our results will accelerate the development of SiC nanophotonic devices and aid in an on chip integration of quantum emitters with meta-optical components.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fabrication of photonic resonators in bulk 4H-SiC

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2

The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting, however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g = -6.4) and 10 K (g = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective g factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately fivefold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Quantum Nanophotonics with Group IV defects in Diamond

Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Valley-Layer Coupling: A New Design Principle for Valleytronics

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on the top or bottom super-layer. The VLC enables a direct coupling between valley and gate electric field, opening a new route towards electrically controlled valleytronics. We analyze the symmetry requirements for the system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the electric polarization of interlayer excitons.

0 citations0 reviewsNo code linkedOpen access