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Wei-Bang Liao

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Published work

2 published item(s)

preprint2022arXiv

Tailoring neuromorphic switching by CuNx-mediated orbital currents

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular momentum (OAM)-induced orbital Hall effect (OHE) and/or the orbital Rashba-Edelstein effect (OREE) have been proposed to generate sizable torques comparable to those from the conventional spin Hall mechanism. In this work, we show that the orbital current can be effectively generated by the nitrided light metal Cu. The overall damping-like SOT efficiency, which consists of both the spin and the orbital current contributions, can be tailored from ~ 0.06 to 0.4 in a Pt/Co/CuNx magnetic heterostructure by tuning the nitrogen doping concentration. Current-induced magnetization switching further verifies the efficacy of such orbital current with a critical switching current density as low as Jc ~ 5 x 10^10 A/m2. Most importantly, the orbital-current-mediated memristive switching behavior can be observed in such heterostructures, which reveals that the gigantic SOT and efficient magnetization switching are the tradeoffs for the applicable window of memristive switching. Our work provides insights into the role of orbital current might play in SOT neuromorphic devices and paves a new route for making energy-efficient spin-orbitronic devices.

preprint2020arXiv

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.