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Researcher profile

Wan Sik Hwang

Wan Sik Hwang contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

7 published item(s)

preprint2016arXiv

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 1014 cm-2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements allowing estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10^3, and with current densities of 1.02 μA/μm, and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET, revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.

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preprint2013arXiv

Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.

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preprint2013arXiv

High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

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preprint2012arXiv

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.

0 citations0 reviewsNo code linkedOpen access