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Researcher profile

Walt A. de Heer

Walt A. de Heer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.atm-cluscond-mat.othercond-mat.str-elphysics.chem-ph

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Published work

10 published item(s)

preprint2013arXiv

Exceptional ballistic transport in epitaxial graphene nanoribbons

Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Bistability of Free Cobalt and Iron Clusters

The cobalt and iron clusters CoN, FeN (20 < N < 150) measured in a cryogenic molecular beam are found to be bistable with magnetic moments per atom both μN/N 2μB in the ground states and μN */N μB in the metastable excited states (for iron clusters, μN ~3NμB and μN* NμB). This energy gap between the two states vanish for large clusters, which explains the rapid convergence of the magnetic moments to the bulk value and suggests that ground state for the bulk involves a superposition of the two, in line with the fluctuating local orders in the bulk itinerant ferromagnetism.

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preprint2010arXiv

Epitaxial Graphenes on Silicon Carbide

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

How Metallic are Small Sodium Clusters?

Cryogenic cluster beam experiments have provided crucial insights into the evolution of the metallic state from the atom to the bulk. Surprisingly, one of the most fundamental metallic properties, the ability of a metal to efficiently screen electric fields, is still poorly understood in small clusters. Theory has predicted that many small Na clusters are unable to screen charge inhomogeneities and thus have permanent dipole moments. High precision electric deflection experiments on cryogenically cooled Na$_N$ ($N<200$) clusters show that the electric dipole moments are at least an order of magnitude smaller than predicted, and are consistent with zero, as expected for a metal. The polarizabilities of Na clusters also show metal spheroid behavior, with fine size oscillations caused by the shell structure.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structural Determination of Multilayer Graphene via Atomic Moiré Interferometry

Rotational misalignment of two stacked honeycomb lattices produces a moiré pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly-oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moiré patterns in multilayer graphene grown on SiC ($000\bar{1}$). Small-angle rotations between the first and third layer are shown to produce a &#34;double-moiré&#34; pattern, resulting from the interference of moiré patterns from the first three layers. These patterns are strongly affected by relative lattice strain between the layers. We model the moiré patterns as a beat-period of the mismatched reciprocal lattice vectors and show how these patterns can be used to determine the relative strain between lattices, in analogy to strain measurement by optical moiré interferometry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The Development of Epitaxial Graphene For 21st Century Electronics

Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could be used for electronics. This was followed by a series of proposals and measurements. The Georgia Institute of Technology (GIT) graphene electronics research project was first funded, by Intel in 2003, and later by the NSF in 2004 and the Keck foundation in 2008. The GIT group selected epitaxial graphene as the most viable route for graphene based electronics and their seminal paper on transport and structural measurements of epitaxial graphene was published in 2004. Subsequently, the field rapidly developed and multilayer graphene was discovered at GIT. This material consists of many graphene layers but it is not graphite: each layer has the electronic structure of graphene. Currently the field has developed to the point where epitaxial graphene based electronics may be realized in the not too distant future.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Top and side gated epitaxial graphene field effect transistors

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising.

0 citations0 reviewsNo code linkedOpen access