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Walt A. de Heer

Walt A. de Heer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.atm-cluscond-mat.otherphysics.chem-phphysics.optics

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Published work

19 published item(s)

preprint2016arXiv

Electronic Cooling via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Exceptional ballistic transport in epitaxial graphene nanoribbons

Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high κ dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Wafer bonding solution to epitaxial graphene - silicon integration

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structured epitaxial graphene: growth and properties

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges that severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermoelectric effect in high mobility single layer epitaxial graphene

The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Bistability of Free Cobalt and Iron Clusters

The cobalt and iron clusters CoN, FeN (20 < N < 150) measured in a cryogenic molecular beam are found to be bistable with magnetic moments per atom both μN/N 2μB in the ground states and μN */N μB in the metastable excited states (for iron clusters, μN ~3NμB and μN* NμB). This energy gap between the two states vanish for large clusters, which explains the rapid convergence of the magnetic moments to the bulk value and suggests that ground state for the bulk involves a superposition of the two, in line with the fluctuating local orders in the bulk itinerant ferromagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial Graphene Electronic Structure And Transport

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial Graphenes on Silicon Carbide

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

How Metallic are Small Sodium Clusters?

Cryogenic cluster beam experiments have provided crucial insights into the evolution of the metallic state from the atom to the bulk. Surprisingly, one of the most fundamental metallic properties, the ability of a metal to efficiently screen electric fields, is still poorly understood in small clusters. Theory has predicted that many small Na clusters are unable to screen charge inhomogeneities and thus have permanent dipole moments. High precision electric deflection experiments on cryogenically cooled Na$_N$ ($N<200$) clusters show that the electric dipole moments are at least an order of magnitude smaller than predicted, and are consistent with zero, as expected for a metal. The polarizabilities of Na clusters also show metal spheroid behavior, with fine size oscillations caused by the shell structure.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structural Determination of Multilayer Graphene via Atomic Moiré Interferometry

Rotational misalignment of two stacked honeycomb lattices produces a moiré pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly-oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moiré patterns in multilayer graphene grown on SiC ($000\bar{1}$). Small-angle rotations between the first and third layer are shown to produce a "double-moiré" pattern, resulting from the interference of moiré patterns from the first three layers. These patterns are strongly affected by relative lattice strain between the layers. We model the moiré patterns as a beat-period of the mismatched reciprocal lattice vectors and show how these patterns can be used to determine the relative strain between lattices, in analogy to strain measurement by optical moiré interferometry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The Development of Epitaxial Graphene For 21st Century Electronics

Graphene has been known for a long time but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June, 2001 brought to light that graphene could be used for electronics. This was followed by a series of proposals and measurements. The Georgia Institute of Technology (GIT) graphene electronics research project was first funded, by Intel in 2003, and later by the NSF in 2004 and the Keck foundation in 2008. The GIT group selected epitaxial graphene as the most viable route for graphene based electronics and their seminal paper on transport and structural measurements of epitaxial graphene was published in 2004. Subsequently, the field rapidly developed and multilayer graphene was discovered at GIT. This material consists of many graphene layers but it is not graphite: each layer has the electronic structure of graphene. Currently the field has developed to the point where epitaxial graphene based electronics may be realized in the not too distant future.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Top and side gated epitaxial graphene field effect transistors

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Non-classical dipoles in cold niobium clusters

Electric deflections of niobium clusters in molecular beams show that they have permanent electric dipole moments at cryogenic temperatures but not higher temperatures, indicating that they are ferroelectric. Detailed analysis shows that the deflections cannot be explained in terms of a rotating classical dipole, as claimed by Anderson et al. The shapes of the deflected beam profiles and their field and temperature dependences indicates that the clusters can exist in two states, one with a dipole and the other without. Cluster with dipoles occupy lower energy states. Excitations from the lower states to the higher states can be induced by low fluence laser excitation. This causes the dipole to vanish.

0 citations0 reviewsNo code linkedOpen access