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Source author record

W. T. Zheng

W. T. Zheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2015arXiv

Nature of Valance Band Splitting on Multilayer MoS2

Understanding the origin of splitting of valance band is important since it governs the unique spin and valley physics in few-layer MoS2. With first principle methods, we explore the effects of spin-orbit coupling and layer's coupling on few-layer MoS2. It is found that intra-layer spin-orbit coupling has a major contribution to the splitting of valance band at K. In double-layer MoS2, the layer's coupling results in the widening of energy gap of splitted states induced by intra-layer spin-orbit coupling. The valance band splitting of bulk MoS_2 in K can follow this model. We also find the effect of inter-layer spin-orbit coupling in triple-layer MoS2. In addition, the inter-layer spin-orbit coupling is found to become to be stronger under the pressure and results in the decrease of main energy gap in the splitting valance bands at K.

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preprint2014arXiv

2DEGs at perovskite interfaces between KTaO3 or KNbO3 and stannates

We report density functional studies of electron rich interfaces between KTaO3 or KNbO3 and CaSnO3 or ZnSnO3 and in particular the nature of the interfacial electron gasses that can be formed. We find that depending on the details these may occur on either the transition metal or stannate sides of the interface and in the later case can be shifted away from the interface by ferroelectricity. We also present calculations for bulk KNbO3, KTaO3, CaSnO3, BaSnO3 and ZnSnO3, showing the different transport and optical properties that may be expected on the two sides of such interfaces. The results suggest that these interfaces may display a wide range of behaviors depending on conditions, and in particular the interplay with ferroelectricity suggests that electrical control of these properties may be possible.

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preprint2011arXiv

Interaction between graphene and SiO2 surface

With first-principles DFT calculations, the interaction between graphene and SiO2 surface has been analyzed by constructing the different configurations based on α-quartz and cristobalite structures. The single layer graphene can stay stably on SiO2 surface is explained based on the general consideration of configuration structures of SiO2 surface. It is also found that the oxygen defect in SiO2 surface can shift the Fermi level of graphene down which opens out the mechanism of hole-doping effect of graphene absorbed on SiO2 surface observed in experiments.

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preprint2011arXiv

Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity, and force constant of the C-C bond in graphene

From the perspective of bond relaxation and vibration, we have reconciled the Raman shifts of graphene under the stimuli of the number-of-layer, uni-axial-strain, pressure, and temperature in terms of the response of the length and strength of the representative bond of the entire specimen to the applied stimuli. Theoretical unification of the measurements clarifies that: (i) the opposite trends of Raman shifts due to number-of-layer reduction indicate that the G-peak shift is dominated by the vibration of a pair of atoms while the D- and the 2D-peak shifts involves z-neighbor of a specific atom; (ii) the tensile strain-induced phonon softening and phonon-band splitting arise from the asymmetric response of the C3v bond geometry to the C2v uni-axial bond elongation; (iii) the thermal-softening of the phonons originates from bond expansion and weakening; and (iv) the pressure- stiffening of the phonons results from bond compression and work hardening. Reproduction of the measurements has led to quantitative information about the referential frequencies from which the Raman frequencies shift, the length, energy, force constant, Debye temperature, compressibility, elastic modulus of the C-C bond in graphene, which is of instrumental importance to the understanding of the unusual behavior of graphene.

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