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Interaction between graphene and SiO2 surface

With first-principles DFT calculations, the interaction between graphene and SiO2 surface has been analyzed by constructing the different configurations based on α-quartz and cristobalite structures. The single layer graphene can stay stably on SiO2 surface is explained based on the general consideration of configuration structures of SiO2 surface. It is also found that the oxygen defect in SiO2 surface can shift the Fermi level of graphene down which opens out the mechanism of hole-doping effect of graphene absorbed on SiO2 surface observed in experiments.

preprint2011arXivOpen access
X. F. FanW. T. ZhengZ. X. ShenJer-lai Kuo
cond-mat.mtrl-sci
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Open access4 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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X. F. FanW. T. ZhengZ. X. ShenJer-lai Kuo

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