Researcher profile

W. S. Oliveira

W. S. Oliveira contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Percolation on Lieb lattices

We study site- and bond-percolation on a class of lattices referred to as Lieb lattices. In two dimensions the Lieb lattice (LL) is also known as the decorated square lattice, or as the CuO$_2$ lattice; in three dimensions it can be generalized to a layered Lieb lattice (LLL) or to a perovskite lattice (PL). Emergent electronic phenomena, such as topological states and ferrimagnetism, have been predicted to occur in these systems, which may be realized in optical lattices as well as in solid state. Since the study of the interplay between quantum fluctuations and disorder in these systems requires the availability of accurate estimates of geometrical critical parameters, such as percolation thresholds and correlation length exponents, here we use Monte Carlo simulations to obtain these data for Lieb lattices when a site (or bond) is present with probability $p$. We have found that the thresholds satisfy a mean-field (Bethe lattice) trend, namely that the critical concentration, $p_c$, increases as the average coordination number decreases; our estimates for the correlation length exponent are in line with the expectation that there is no change in the universality class.

preprint2014arXiv

Mott-Anderson transition in disordered charge transfer model: insights from typical medium theory

The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational (statistical dynamical mean field theory) studies. Here we show that a much simpler typical medium theory approach (TMT-DMFT) to the same model is able to capture most qualitative and even quantitative aspects of the phase diagram, the emergence of an intermediate electronic Griffiths phase, and the critical behavior close to the metal-insulator transition. Conceptual and mathematical simplicity of the TMT-DMFT formulation thus makes it possible to gain useful new insight into the mechanism of the Mott-Anderson transition in these models.