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Researcher profile

W. P. Pratt Jr.

W. P. Pratt Jr. contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-con

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Published work

9 published item(s)

preprint2020arXiv

Spin-polarized triplet supercurrent in Josephson junctions with perpendicular ferromagnetic layers

Josephson junctions containing three ferromagnetic layers with non-collinear magnetizations between adjacent layers carry spin-triplet supercurrent under certain conditions. The signature of the spin-triplet supercurrent is a relatively slow decay of the maximum supercurrent as a function of the thickness of the middle ferromagnetic layer. In this work we focus on junctions where the middle magnetic layer is a [Co/Pd]$_N$ multilayer with perpendicular magnetic anisotropy (PMA), while the outer two layers have in-plane anisotropy. We compare junctions where the middle PMA layer is or is not configured as a synthetic antiferromagnet (PMA-SAF). We find that the supercurrent decays much more rapidly with increasing the number $N$ of [Co/Pd] bilayers in the PMA-SAF junctions compared to the PMA junctions. Similar behavior is observed in junctions containing [Co/Ni]$_N$ PMA multilayers. We model that behavior by assuming that each Co/Pd or Co/Ni interface acts as a partial spin filter, so that the spin-triplet supercurrent in the PMA junctions becomes more strongly spin-polarized as $N$ increases while the supercurrent in the PMA-SAF junctions is suppressed with increasing $N$. We also address a question raised in a previous work regarding how much spin-singlet supercurrent is transmitted through our nominally spin-triplet junctions. We do that by comparing spin-triplet junctions with similar junctions where the order of the magnetic layers has been shuffled. The results of this work are expected to be helpful in designing spin-triplet Josephson junctions for use in cryogenic memory.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Proximity-induced density-of-states oscillations in a superconductor/strong-ferromagnet system

We have measured the evolution of the tunneling density of states (DOS) in superconductor/ferromagnet (S/F) bilayers with increasing F-layer thickness, where F in our experiment is the strong ferromagnet Ni. As a function of increasing Ni thickness, we detect multiple oscillations in the DOS at the Fermi energy from differential conductance measurements. The features in the DOS associated with the proximity effect change from normal to inverted twice as the Ni thickness increases from 1 to 5 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves

To study spin flipping within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel (AP) and parallel (P) magnetic states of the two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greater than 5 nm, but rather became constant to within our measuring uncertainty. This constant looks to be due mostly to a new, small MR in thin Py layers. The constant complicates isolating the spin-diffusion length, lsf(IrMn), in bulk IrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similar results were found with FeMn.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces

Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let us quantify conduction electron scattering and spin-flipping at a sputtered ferromagnetic/ferromagnetic (F1/F2 = Co/Ni) interface, with important consequences for CPP-MR and spin-torque experiments with perpendicular anisotropy. We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, and Py-based, symmetric double exchange-biased spin-valves (DEBSVs) containing inserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Ni multilayers, to derive Co/Ni interface specific resistances AR(Co/Ni)(Up) = 0.03 (+0.02)(-0.03) f-ohm-m^2 and AR(Co/Ni)(down) = 1.00 +/- 0.07 f-ohm-m^2, and interface spin-flipping parameter delta(Co/Ni) = 0.35 +/- 0.05. The specific resistances are consistent with our no-free-parameter calculations for an interface thickness between 2 and 4 monolayers (ML) that is compatible with expectations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces

From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta).

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu

We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique involves measuring the CPP magnetoresistance of a sample containing a ferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thick central Cu layer of a symmetric Py-based, double exchange-biased spin-valve. To focus on delta(F/N), the F- and N-layers are made thin compared to their spin-diffusion lengths. We test the technique using F/N = Co/Cu. Analysing with no adjustable parameters, gives inconsistency with delta(Co/Cu) = 0, but consistency with our prior value of delta(Co/Cu) = 0.25 (+/- 0.1). Taking delta(Co/Cu) as adjustable gives delta(Co/Cu) = 0.33 (+0.03/-0.08).

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Perpendicular-current Studies of Electron Transport Across Metal/Metal Interfaces

We review what we have learned about the scattering of electrons by the interfaces between two different metals (M1/M2) in the current-perpendicular-to-plane (CPP) geometry. In this geometry, the intrinsic quantity is the specific resistance, AR, the product of the area through which the CPP current flows times the CPP resistance. We describe results for both non-magnetic/non-magnetic (N1/N2) and ferromagnetic/non-magnetic (F/N) pairs. We focus especially upon cases where M1/M2 are lattice matched (i.e., have the same crystal structure and the same lattice parameters to within ~ 1%), because in these cases no-free-parameter calculations of 2AR agree surprisingly well with measured values. But we also list and briefly discuss cases where M1/M2 are not lattice matched, either having different crystal structures, or lattice parameters that differ by several percent. The published calculations of 2AR in these latter cases do not agree so well with measured values.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Sensitivity of Ag/Al Interface Specific Resistances to Interfacial Intermixing

We have measured an Ag/Al interface specific resistance, 2AR(Ag/Al)(111) = 1.4 fOhm-m^2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%-50% alloy, and even larger than our newly predicted 1.3 fOhmm^2 for a 4 ML 50%-50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface greater than or equal to 4 ML thick. From our calculations, a predicted anisotropy ratio, 2AR(Ag/Al)(001)/2AR(Ag/Al)(111), of more then 4 for a perfect interface, should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars

Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.

0 citations0 reviewsNo code linkedOpen access