Researcher profile

Vladimir V. Talanov

Vladimir V. Talanov contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Reproducible Operating Margins on a 72,800-Device Digital Superconducting Chip

We report the design and test of Reciprocal Quantum Logic shift-register yield vehicles consisting of up to 72,800 Josephson junction devices per die, the largest digital superconducting circuits ever reported. Multiple physical layout styles were matched to the MIT Lincoln Laboratory foundry, which supports processes with both four and eight metal layers and minimum feature size of 0.5 μm. The largest individual circuits with 40,400 junctions indicate large operating margins of $\pm$20% on AC clock amplitude. In one case the data were reproducible to the accuracy of the measurement, $\pm$1% across five thermal cycles using only the rudimentary precautions of passive mu-metal magnetic shielding and a controlled cool-down rate of 3 mK/s in the test fixture. We conclude that with proper mitigation techniques, flux-trapping is no longer a limiting consideration for very-large-scale-integration of superconductor digital logic.

preprint2011arXiv

Electrodynamics of the Josephson-Coupled Parallel Plate Resonator

Eigen oscillations in a superconducting parallel plate resonator with the Josephson-coupled plates are investigated. While the insulator thickness S changes from tens of microns down to the decay lengthscale of the superconducting wavefunction into a dielectric, ξ~1 nm, both the resonant frequency and Q-factor vary non-monotonically by up to three orders in magnitude. A crossover between the Swihart waves and Josephson plasmons causes a global minimum in the resonant frequency and a local maximum in the Q-factor at S~10ξ.

preprint2011arXiv

Near-field scanning microwave microscope for interline capacitance characterization of nanoelectronics interconnect

We have developed a noncontact method for measurement of the interline capacitance in Cu/low-k interconnect. It is based on a miniature test vehicle with net capacitance of a few femto-Farads formed by two 20-μm-long parallel wires (lines) with widths and spacings the same as those of the interconnect wires of interest. Each line is connected to a small test pad. The vehicle impedance is measured at 4 GHz by a near-field microwave probe with 10 μm probe size via capacitive coupling of the probe to the vehicle's test pads. Full 3D finite element modeling at 4 GHz confirms that the microwave radiation is concentrated between the two wires forming the vehicle. An analytical lumped element model and a short/open calibration approach have been proposed to extract the interline capacitance value from the measured data. We have validated the technique on several test vehicles made with copper and low-k dielectric on a 300 mm wafer. The vehicles interline spacing ranges from 0.09 to 1 μm and a copper line width is 0.15 μm. This is the first time a near-field scanning microwave microscope has been applied to measure the lumped element impedance of a test vehicle.

preprint2011arXiv

Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-μm-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size.