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Vitaly Podzorov

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Published work

2 published item(s)

preprint2022arXiv

Local ultra-densification of single-walled carbon nanotube films: modeling and experiment

Fabrication of nanostructured metasurfaces poses a significant technological and fundamental challenge. Despite developing novel systems that support reversible elongation and distortion, their nanoscale patterning and control of optical properties remain an open problem. Herein we report the atomic force microscope lithography (AFML) application for nanoscale patterning of single-walled carbon nanotube films and the associated reflection coefficient tuning. We present models of bundling reorganization, formed-pattern stability, and energy distribution describing mechanical behavior with mesoscopic distinct element method (MDEM). All observed and calculated phenomena support each other and present a platform for developing AFML patterned optical devices using meshy nanostructured matter.

preprint2011arXiv

Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules

We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-like absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10$^{14}$ holes/cm$^2$, our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes.