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Researcher profile

Vincent Tung

Vincent Tung contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

2 published item(s)

preprint2026arXiv

Freestanding Resist Metasurface Supporting Higher-Order BICs for Efficient Field Enhancement in TMD Monolayers

Enhancing light-matter coupling in two-dimensional (2D) semiconductors such as transition metal dichalcogenide monolayers remains a central challenge in nanophotonics due to their atomic thickness, which limits their interaction volume with light. Here, we demonstrate that first-order quasi-bound states in the continuum (quasi-BICs) supported by a freestanding metasurface provide exceptionally strong surface field enhancement, enabling efficient coupling with a tungsten disulfide (WS2) monolayer. Triangular-lattice polymer patterns on silicon nitride membranes are fabricated to realize these higher-order modes. Simulations reveal that first-order quasi-BICs exhibit much stronger field enhancement than zeroth-order modes at the top surface where the WS2 monolayer is placed. Photoluminescence (PL) measurements confirm a remarkable PL enhancement factor of 127 for first-order quasi-BICs, over six times larger than that of zeroth-order quasi-BICs. These results establish higher-order BICs in freestanding metasurfaces as a powerful route to engineer light-matter interactions in 2D semiconductors for advanced nanophotonic and quantum photonic applications.

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preprint2020arXiv

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access