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Chao Lei

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Published work

6 published item(s)

preprint2026arXiv

PathISE: Learning Informative Path Supervision for Knowledge Graph Question Answering

Knowledge Graph Question Answering (KGQA) aims to answer user questions by reasoning over Knowledge Graphs (KGs). Recent KGQA methods mainly follow the retrieval-augmented generation paradigm to ground Large Language Models~(LLMs) with structured knowledge from KGs. However, training effective models to retrieve question-relevant evidence from KGs typically requires high-quality intermediate supervision signals, such as question-relevant paths or subgraphs, which are time- and resource-intensive to obtain. We propose PathISE, a novel framework for learning high-quality intermediate supervision from answer-level labels. PathISE introduces a lightweight transformer-based estimator that estimates the informativeness of relation paths to construct pseudo path-level supervision. This supervision is then distilled into an LLM path generator, whose generated paths are grounded in the KG to provide compact evidence for inductive answer reasoning. ExtensiveISE experiments on three KGQA benchmarks show that PathISE achieves competitive or state-of-the-art KGQA performance, and provides reusable supervision signals that can enhance existing KGQA models, without relying on costly LLM-refined supervision signals. Our source code is available at https://anonymous.4open.science/r/PathISE-2F87.

preprint2022arXiv

Anomalous Landau quantization in intrinsic magnetic topological insulators

The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron doping6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order.

preprint2020arXiv

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.

preprint2016arXiv

Direct measurement of topological numbers with spins in diamond

Topological numbers can characterize the transition between different topological phases, which are not described by Landau's paradigm of symmetry breaking. Since the discovery of quantum Hall effect, more topological phases have been theoretically predicted and experimentally verified. However, it is still an experimental challenge to directly measure the topological number of various predicted topological phases. In this paper, we demonstrate quantum simulation of topological phase transition of a quantum wire (QW) using a single nitrogen-vacancy (NV) center in diamond. Deploying quantum algorithm of finding eigenvalues, we can reliably extract both the dispersion relations and topological numbers.

preprint2016arXiv

Experimental observation of topological transitions in interacting multi-spin systems

Topologically ordered phase has emerged as one of most exciting concepts that not only broadens our understanding of phases of matter, but also has been found to have potential application in fault-tolerant quantum computation. The direct measurement of topological properties, however, is still a challenge especially in interacting quantum system. Here we realize one-dimensional Heisenberg spin chains using nuclear magnetic resonance simulators and observe the interaction-induced topological transitions, where Berry curvature in the parameter space of Hamiltonian is probed by means of dynamical response and then the first Chern number is extracted by integrating the curvature over the closed surface. The utilized experimental method provides a powerful means to explore topological phenomena in quantum systems with many-body interactions.

preprint2013arXiv

NV-Center Based Digital Quantum Simulation of a Quantum Phase Transition in Topological Insulators

Nitrogen-vacancy centers in diamond are ideal platforms for quantum simulation, which allows one to handle problems that are intractable theoretically or experimentally. Here we propose a digital quantum simulation scheme to simulate the quantum phase transition occurring in an ultrathin topological insulator film placed in a parallel magnetic field [Zyuzin \textit{et al.}, Phys. Rev. B \textbf{83}, 245428 (2011)]. The quantum simulator employs high quality spin qubits achievable in nitrogen-vacancy centers and can be realized with existing technology. The problem can be mapped onto the Hamiltonian of two entangled qubits represented by the electron and nuclear spins. The simulation uses the Trotter algorithm, with an operation time of the order of 100 $μ$s for each individual run.