BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Vincent Jacques

Vincent Jacques contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phphysics.app-phphysics.optics

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2025arXiv

Isofrequency spin-wave imaging using color center magnetometry for magnon spintronics

Magnon spintronics aims to harness spin waves in magnetic films for information technologies. Color center magnetometry is a promising tool for imaging spin waves, using electronic spins associated with atomic defects in solid-state materials as sensors. However, two main limitations persist: the magnetic fields required for spin-wave control detune the sensor-spin detection frequency, and this frequency is further restricted by the color center nature. Here, we overcome these limitations by decoupling the sensor spins from the spin-wave control fields -selecting color centers with intrinsic anisotropy axes orthogonal to the film magnetization- and by using color centers in diamond and hexagonal boron nitride to operate at complementary frequencies. We demonstrate isofrequency imaging of field-controlled spin waves in a magnetic half-plane and show how intrinsic magnetic anisotropies trigger bistable spin textures that govern spin-wave transport at device edges. Our results establish color center magnetometry as a versatile tool for advancing spin-wave technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Detection of single W-centers in silicon

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Imaging topological defects in a non-collinear antiferromagnet

We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show that the direction of these wavevectors is not strictly locked to the preferred crystallographic axes as continuous rotations bridge different wavevectors. At the junctions between the magnetic domains, we observe topological line defects identical to those found in a broad variety of lamellar physical systems with rotational symmetries. Our work establishes the presence of these magnetic objects at room temperature in the multiferroic antiferromagnet BiFeO$_3$, offering new possibilities for their use in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Low temperature photo-physics of single NV centers in diamond

We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence rate, which indicate a marked decrease in the optical readout efficiency of the NV's ground state spin. We assign these dips to excited state level anti-crossings, which occur at magnetic fields that strongly depend on the effective, local strain environment of the NV center. Our results offer new insights into the structure of the NVs' excited states and a new tool for their effective characterization. Using this tool, we observe strong indications for strain-dependent variations of the NV's orbital g-factor, obtain new insights into NV charge state dynamics, and draw important conclusions regarding the applicability of NV centers for low-temperature quantum sensing.

0 citations0 reviewsNo code linkedOpen access