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Vikash Mishra

Vikash Mishra appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elDatabases

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Published work

6 published item(s)

preprint2022arXiv

Anomalous electrochemical capacitance in Mott insulator titanium sesquioxide

Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapacitance substantially suffer from material instability at high temperatures and thus there is a demand for novel metal oxides exhibiting thermally improved high electric double layer capacitance with material stability. In this study, titanium sesquioxide, Ti$_2$O$_3$, a Mott insulator in its metallic state at 300$^o$ C showed an anomalous increase of $\approx$ 560% in the solid-state electrochemical capacitance as compared to its pristine response at room temperature (RT). In aqueous electrolyte, the maximum capacitance was obtained up to 1053 $μ$F/cm$^2$, which is 307% higher than with solid-state electrolyte. Moreover, the semiconducting state of Ti$_2$O$_3$ demonstrated $\approx$ 3500% enhancement in its electrochemical capacitance upon infrared illumination at RT. The observed electrochemical responses in Ti$_2$O$_3$ are attributed to the transition of semiconducting to the metallic state by redistribution of the localized electrons. Our experimental results find a good agreement with the first-principles density-functional theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study open has wide avenues to engineer the electrochemical double layer capacitance of theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study opens wide avenues to engineer the electrochemical double layer capacitance of Ti$_2$O$_3$ with high chemical stability.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distributed Query Processing Plans generation using Teacher Learner Based Optimization

With the growing popularity, the number of data sources and the amount of data has been growing very fast in recent years. The distribution of operational data on disperse data sources impose a challenge on processing user queries. In such database systems, the database relations required by a query to answer may be stored at multiple sites. This leads to an exponential increase in the number of possible equivalent or alternatives of a user query. Though it is not computationally reasonable to explore exhaustively all possible query plans in a large search space, thus a strategy is requisite to produce optimal query plans in distributed database systems. The query plan with most cost-effective option for query processing is measured necessary and must be generated for a given query. This paper attempts to generate such optimal query plans using a parameter less optimization technique Teaching-Learner Based Optimization(TLBO). The TLBO algorithm was experiential to go one better than the other optimization algorithms for the multi objective unconstrained and constrained benchmark problems. Experimental comparisons of TLBO based optimal plan generation with the multiobjective genetic algorithm based distributed query plan generation algorithm shows that for higher number of relations, the TLBO based algorithm is able to generate comparatively better quality Top K query plans.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Half-metallicity in Armchair Boron Nitride Nanoribbons: A First-Principles Study

Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail by calculating electronic and magnetic properties of these hydrogenated ABNNRs by means of first-principles calculations within the local spin-density approximation (LSDA). ABNNRs with only edge B atoms passivated by H atoms are found to be half-metallic (regardless of their width) with a half-metal gap of 0.26 eV. Upto 100% spin polarized charge transport is predicted across the Fermi level owing to the giant spin splitting. Transmission spectrum analysis also confirms the separation of spin up and spindown electronic channels. It is revealed that H-passivation of only edge N atoms transforms non-magnetic bare ribbons into energetically stable magnetic semiconductors whereas hydrogenation of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. The results are promising towards the realization of inorganic spintronic devices.

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preprint2016arXiv

Intrinsic Half-metallicity in Edge Fluorinated Armchair Boron Nitride Nanoribbons

We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluorinated ABNNRs have been systematically analyzed by means of first-principles calculations within the local spin-density approximation (LSDA). The ribbons whose only edge-B atoms passivated with F atoms (i.e., edge-N atoms are un-passivated), regardless of width, are found half-metallic with a half-metal gap of 0.3 eV. A 100 \% spin polarized charge transport across the Fermi level is expected for such ribbons as the spin polarized states are $\sim$0.4 eV more stable than the spin un-polarized states and only single-spin conducting channels are present across the Fermi level owing to the gigantic spin splitting. The existence of half-metallicity is attributed to the localization of electronic charge at bare edge-N atoms as revealed from the analysis of Bloch states and projected density of states (PDOS).The sufficiently large half-metal gap (0.3 eV) with huge difference in the energies ($\sim$ 0.4 eV) of spin polarized and spin compensated states projects these half-metallic ABNNRs as potential candidate for spintronics applications.

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preprint2016arXiv

Metastable behavior of Urbach tail states in BaTiO3 across phase transition

The temperature dependent diffuse reflectance spectroscopy measurements were carried out on the polycrystalline samples of BaTiO3 across the tetragonal to cubic structural phase transition temperature. The values of various optical parameters such as band gap (Eg), Urbach energy (EU) and Urbach focus (E0) are estimated in the range of 300 K to 470K. It is observed that near structural phase transition temperatures there exists two value of E0, suggesting presence of electronic heterogeneity over wide temperature range. Further near transition temperature EU shows metastability i.e. value of EU at temperature T is not constant but is a function of time (t). Interestingly it is observed that the ratio of EU(t=0)/ EU(t = tm), is almost remains constant at 295 K (pure tetragonal phase) and at 450 K (pure cubic phase), whereas this ratio shows decreasing behavior close to structural phase transition temperature, which confirms the presence of electronic metastibility in the pure BaTiO3. The observed metastibility can be fitted with the stretch exponents relaxation behavior, suggesting the presence of dynamic heterogeneous electronic disorder present in the sample across the transition. Further it appears that these metastable Urbach tail states (electronic disorder) may couple with the soft phonon modes and responsible for the observed terahertz dielectric relaxation (Phys. Rev. Lett. 101, 167402 (2008)). Further; present studies suggest that the optical studies appear to be more sensitive to probe the disorder/heterogeneity present in the sample.

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preprint2015arXiv

Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study

Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly to give asymmetry of line-shape generated by considering the combined effect. This indicates existence of interplay between the two effects. The origin of interplay lies in the fact that Fano effect itself depends on quantum confinement effect and in turn provides an asymmetry. This can not be explained by considering the two effects contribution independent of each other.

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