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Source author record

Ravikiran Late

Ravikiran Late appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2016arXiv

Half-metallicity in Armchair Boron Nitride Nanoribbons: A First-Principles Study

Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail by calculating electronic and magnetic properties of these hydrogenated ABNNRs by means of first-principles calculations within the local spin-density approximation (LSDA). ABNNRs with only edge B atoms passivated by H atoms are found to be half-metallic (regardless of their width) with a half-metal gap of 0.26 eV. Upto 100% spin polarized charge transport is predicted across the Fermi level owing to the giant spin splitting. Transmission spectrum analysis also confirms the separation of spin up and spindown electronic channels. It is revealed that H-passivation of only edge N atoms transforms non-magnetic bare ribbons into energetically stable magnetic semiconductors whereas hydrogenation of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. The results are promising towards the realization of inorganic spintronic devices.

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preprint2016arXiv

Intrinsic Half-metallicity in Edge Fluorinated Armchair Boron Nitride Nanoribbons

We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluorinated ABNNRs have been systematically analyzed by means of first-principles calculations within the local spin-density approximation (LSDA). The ribbons whose only edge-B atoms passivated with F atoms (i.e., edge-N atoms are un-passivated), regardless of width, are found half-metallic with a half-metal gap of 0.3 eV. A 100 \% spin polarized charge transport across the Fermi level is expected for such ribbons as the spin polarized states are $\sim$0.4 eV more stable than the spin un-polarized states and only single-spin conducting channels are present across the Fermi level owing to the gigantic spin splitting. The existence of half-metallicity is attributed to the localization of electronic charge at bare edge-N atoms as revealed from the analysis of Bloch states and projected density of states (PDOS).The sufficiently large half-metal gap (0.3 eV) with huge difference in the energies ($\sim$ 0.4 eV) of spin polarized and spin compensated states projects these half-metallic ABNNRs as potential candidate for spintronics applications.

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preprint2015arXiv

Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study

Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly to give asymmetry of line-shape generated by considering the combined effect. This indicates existence of interplay between the two effects. The origin of interplay lies in the fact that Fano effect itself depends on quantum confinement effect and in turn provides an asymmetry. This can not be explained by considering the two effects contribution independent of each other.

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preprint2015arXiv

Room temperature magnetodielectric studies on Mn doped LaGaO3

The polycrystalline samples of LaGa1-xMnxO3 (0<x<0.3) has been prepared by solid state reaction route. The phase purity of these samples has been confirmed by powder x-ray diffraction experiments carried out on BL-12 at Indus-2 synchrotron radiation source. The sample with x=0.2 shows significant change in the value of capacitance with the application of magnetic field. The observed results were understood by systematically analyzing magneto-capacitance (MC), magneto resistance (MR) and dielectric loss as a function of frequency. Our results and analysis suggests that the observed magneto dielectric (MD) coupling may be due to the MR effect of Maxwell-Wagner type and/or field induced dipolar relaxation. Further it is observed that the oxygen stoichiometry plays a very crucial role in observed MD coupling.

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