BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Viet-Hung Nguyen

Viet-Hung Nguyen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

Catalog footprint

What is connected

7works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2025arXiv

Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene

We present a numerical study of three-layer graphene heterostructures in which the layers are twisted by the magic angle ($\sim$1.1$^\circ$) or by $\sim$$30^\circ$ to form a graphene quasicrystal. The heterostacks are described using realistic structural relaxations and tight-binding Hamiltonians, and their transport properties are computed for both pristine and disordered systems containing up to $\sim$8 million atoms. Owing to the weak interlayer coupling, we resolve the hybridization between magic-angle flat bands and quasicrystalline states, which are modified in distinct ways across low- and high-energy windows, revealing a new hybrid electronic regime to explore.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides

In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hopping. These predictions are favourably compared with experimental data and open a road towards the optimization of graphene-based composites with improved electrical conduction.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electron-phonon coupling in a magic-angle twisted-bilayer graphene device

The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $θ=0^{\circ}$, $\sim 1.1^{\circ}$ (magic-angle) and $\sim 7^{\circ}$ (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Lattice dynamics localization in low-angle twisted bilayer graphene

A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of twistronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings

We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the transport, the transmission probability can be strongly modulated, i.e., almost fully suppressed, when tuning a perpendicular magnetic field. On this basis, strong AB oscillations with giant negative magnetoresistance can be achieved at room temperature. The magnetoresistance reaches thousands % in perfect GNR rings and a few hundred % with edge disordered GNRs. The design rules to observe such strong effects are also discussed. Our study hence provides guidelines for further investigations of the AB interference and to obtain high magnetoresistance in graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings

We report a numerical study on Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on zigzag graphene nanoribbon rings. We find that when applying a magnetic field to the ring, the AB interference can reverse the parity symmetry of incoming waves and hence can strongly modulate the parity selective transmission through the system. Therefore, the transmission between two states of different parity exhibits the AB oscillations with a π-phase shift, compared to the case of states of same parity. On this basis, it is shown that interesting effects such as giant (both positive and negative) magnetoresistance and strong negative differential conductance can be achieved in this structure. Our study thus presents a new property of the AB interference, which could be helpful to further understand the transport properties of graphene mesoscopic-systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches

We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extraction of the carrier mobility that is free from contact resistance contamination, and provides accurate mobilities at a reasonable cost, with minimal needs for ensemble averages. We then introduce a new paradigm for the definition of the partial mobility $μ_{M}$ associated with a given elastic scattering mechanism "M", taking phonons (PH) as a reference ($μ_{M}^{-1}=μ_{PH+M}^{-1}-μ_{PH}^{-1}$). We argue that this definition makes better sense in a quantum transport framework as it is free from long range interference effects that can appear in purely ballistic calculations. As a matter of fact, these mobilities satisfy Matthiessen's rule for three mechanisms [surface roughness (SR), remote Coulomb scattering (RCS) and phonons] much better than the usual, single mechanism calculations. We also discuss the problems raised by the long range spatial correlations in the RCS disorder. Finally, we compare semi-classical Kubo-Greenwood (KG) and quantum NEGF calculations. We show that KG and NEGF are in reasonable agreement for phonon and RCS, yet not for SR. We point to possible deficiencies in the treatment of SR scattering in KG, opening the way for further improvements.

0 citations0 reviewsNo code linkedOpen access