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Veeresh Taranalli

Veeresh Taranalli contributes to research discovery and scholarly infrastructure.

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Information Theory math.IT

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preprint2016arXiv

Channel Models for Multi-Level Cell Flash Memories Based on Empirical Error Analysis

We propose binary discrete parametric channel models for multi-level cell (MLC) flash memories that provide accurate ECC performance estimation by modeling the empirically observed error characteristics under program/erase (P/E) cycling stress. Through a detailed empirical error characterization of 1X-nm and 2Y-nm MLC flash memory chips from two different vendors, we observe and characterize the overdispersion phenomenon in the number of bit errors per ECC frame. A well studied channel model such as the binary asymmetric channel (BAC) model is unable to provide accurate ECC performance estimation. Hence we propose a channel model based on the beta-binomial probability distribution (2-BBM channel model) which is a good fit for the overdispersed empirical error characteristics and show through statistical tests and simulation results for BCH, LDPC and polar codes, that the 2-BBM channel model provides accurate ECC performance estimation in MLC flash memories.

preprint2016arXiv

On the Capacity of the Beta-Binomial Channel Model for Multi-Level Cell Flash Memories

The beta-binomial (BBM) channel model was recently proposed to model the overdispersed statistics of empirically observed bit errors in multi-level cell (MLC) flash memories. In this paper, we study the capacity of the BBM channel model for MLC flash memories. Using the compound channel approach, we first show that the BBM channel model capacity is zero. However, through empirical observation, this appears to be a very pessimistic estimate of the flash memory channel capacity. We propose a refined channel model called the truncated-support beta-binomial (TS-BBM) channel model and derive its capacity. Using empirical error statistics from 1X-nm and 2Y-nm MLC flash memories, we numerically estimate the TS-BBM channel model capacity as a function of the program/erase (P/E) cycling stress. The capacity of the 2-TS-BBM channel model provides an upper bound on the coding rates for the flash memory chip assuming a single binary error correction code is used.

preprint2014arXiv

Adaptive Linear Programming Decoding of Polar Codes

Polar codes are high density parity check codes and hence the sparse factor graph, instead of the parity check matrix, has been used to practically represent an LP polytope for LP decoding. Although LP decoding on this polytope has the ML-certificate property, it performs poorly over a BAWGN channel. In this paper, we propose modifications to adaptive cut generation based LP decoding techniques and apply the modified-adaptive LP decoder to short blocklength polar codes over a BAWGN channel. The proposed decoder provides significant FER performance gain compared to the previously proposed LP decoder and its performance approaches that of ML decoding at high SNRs. We also present an algorithm to obtain a smaller factor graph from the original sparse factor graph of a polar code. This reduced factor graph preserves the small check node degrees needed to represent the LP polytope in practice. We show that the fundamental polytope of the reduced factor graph can be obtained from the projection of the polytope represented by the original sparse factor graph and the frozen bit information. Thus, the LP decoding time complexity is decreased without changing the FER performance by using the reduced factor graph representation.