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Vandana Nanal

Vandana Nanal contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2023arXiv

Gender Equity in Physics in India: Interventions, Outcomes, and Roadmap

The gender imbalance in physics higher education and advanced professions is a global problem, and India is not an exception. Although the issue has been acknowledged widely, discrimination needs to be recognized as the driving force. The past three years have witnessed initiatives by different gender groups as well as the Government of India in addressing these lacunae. We report various activities, describe interventions, and present statistics indicating improvements achieved. The Gender in Physics Working Group has brought about significant gender reforms in the Indian Physics Association. The working group organized an open discussion on the issue of sexual harassment in physics professions for the first time in 2018. Subsequently, in 2019, GIPWG organized the first-ever national conference on gender issues, Pressing for Progress. The deliberations of the conference culminated in the Hyderabad Charter, a roadmap towards gender equity in India. The Working Group for Gender Equity constituted under the Astronomical Society of India, also played an impactful role. At the government level, notable new initiatives include Gender Advancement through Transforming Institutions and the proposed Science and Technology Innovation Policy for mainstreaming equity and inclusion.

preprint2014arXiv

Carbon Irradiated SI-GaAs for Photoconductive THz Detection

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

preprint2013arXiv

Highly Efficient and Electrically Robust Carbon Irradiated SI-GaAs Based Photoconductive THz Emitters

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 micron deep, we have created lot of defects and decreased the life time of photo-excited carriers inside the substrate. Depending on the irradiation dose we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the antenna. This has resulted in increasing maximum cut-off of the applied voltage across Photo-Conductive Emitter (PCE) electrodes to operate the device without thermal breakdown from ~35 V to > 150 V for the 25 micron electrode gaps. At optimum operating conditions, carbon irradiated (10^14 ions/cm^2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ~ 800.