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Source author record

S. S. Prabhu

S. S. Prabhu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2019arXiv

Hot carrier dynamics in a dispersionless plasmonic system

Hot carrier dynamics in a dispersionless plasmonic structures over a broad wavelength are studied by pump-probe measurements with 45 fs time resolution. The role of direct excited as well as plasmon generated hot carriers on low energy probe plasmons are studied by simultaneous measurement of differential transmittance and reflectance. While the pump fluence dependence on the decay times is linear for hot electrons and plasmon generated hot electrons, when pump is near resonant with the X- symmetry point, decay time varied as square of pump fluence. Decay times of 800 nm degenerate pump-probe measurements highlight the difference in surface (reflection) and the bulk (transmission) mechanisms. Decay time corresponding to the hot carrier relaxation is in the 1 -3 ps range for different excitation energies. Rise time, governed by the plasmon to hot carrier conversion and electron - electron scattering processes, is about 200 fs for the hot carrier and hot plasmon excitation cases which increased to about 485 fs for when pump is resonant with interband transition at X- symmetry point.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single and multiband THz Metamaterial Polarizers

We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of the cut-wires is explained based a transmission line model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Broadband Dipolar Resonance in THz Metamaterials

We demonstrate a THz metamaterial with broadband dipole resonance originating due to the hybridization of LC resonances. The structure optimized by finite element method simulations is fabricated by electron beam lithography and characterized by terahertz time-domain spectroscopy. Numerically, we found that when two LC metamaterial resonators are brought together, an electric dipole resonance arises in addition to the LC resonances. We observed a strong dependence of the width of these resonances on the separation between the resonators. This dependence can be explained based on series and parallel RLC circuit analogies. The broadband dipole resonance appears when both the resonators are fused together. The metamaterial has a stopband with FWHM of 0.47 THz centered at 1.12 THz. The experimentally measured band features are in reasonable agreement with the simulated ones. The experimental power extinction ratio of THz in the stopbands is found to be 15 dB.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Carbon Irradiated SI-GaAs for Photoconductive THz Detection

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

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preprint2014arXiv

Microlensless Interdigitated Photoconductive Terahertz Emitters

We report here fabrication of interdigitated photoconductive antenna (iPCA) terahertz (THz) emitters based on plasmonic electrode design. Novel design of this iPCA enables it to work without microlens array focusing, which is otherwise required for photo excitation of selective photoconductive regions to avoid the destructive interference of emitted THz radiation from oppositely biased regions. Benefit of iPCA over single active region PCA is that photo excitation can be done at larger area, hence avoiding the saturation effected at higher optical excitation density. The emitted THz radiation power from plasmonic-iPCAs is ~ 2 times more than the single active region plasmonic PCA at 200 mW optical excitation, which will further increase at higher optical powers. This design is expected to reduce fabrication cost of photoconductive THz sources and detectors.

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preprint2013arXiv

Highly Efficient and Electrically Robust Carbon Irradiated SI-GaAs Based Photoconductive THz Emitters

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 micron deep, we have created lot of defects and decreased the life time of photo-excited carriers inside the substrate. Depending on the irradiation dose we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the antenna. This has resulted in increasing maximum cut-off of the applied voltage across Photo-Conductive Emitter (PCE) electrodes to operate the device without thermal breakdown from ~35 V to > 150 V for the 25 micron electrode gaps. At optimum operating conditions, carbon irradiated (10^14 ions/cm^2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ~ 800.

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preprint2013arXiv

Improved Efficiency of Photoconductive THz Emitters by Increasing the Effective Contact Length of Electrodes

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.

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preprint2013arXiv

Physical, optical and nonlinear properties of InS single crystal

Indium Sulphide (InS) single crystals are successfully grown by In flux. Single crystal X-ray diffraction shows orthorhombic structure of Pnnm space group. Ellipsometry measurements performed on the (010) oriented crystal exhibit low anisotropy in the 300-1000 nm wavelength range and consequently negligible THz emission is observed. Optical band gap of $2.09 eV$ is deduced from linear optical measurements. Nonlinear optical properties are studied by single beam Z-scan measurements at 800 nm, where two-photon absorption is present. Nonlinear refractive index and absorption coefficient are estimated to be $η_2$ = $2.3 10^{-11} cm^2/W$ and $β$= $62.4 cm/ GW$, respectively for excitation intensity of $0.32 GW/cm^2$. The origin of nonlinearity in InS crystal is accounted to be due to the third-order anharmonic motion of the bound electrons.

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