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Researcher profile

V. Ya. Aleshkin

V. Ya. Aleshkin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

6 published item(s)

preprint2026arXiv

Impact ionization in narrow band gap CdHgTe quantum well with "resonant" band structure

Impact ionization probabilities were calculated in a CdHgTe quantum well, where the distance between electron subbands is close to the band gap energy. This band structure enables impact ionization with small momentum transfer for electrons in the second subband. The study demonstrates that such processes increase the impact ionization probability by approximately two orders of magnitude compared to the impact ionization probability for electrons in the first subband, for which transitions with small momentum changes are impossible. The probability of single impact ionization during the electron energy loss due to optical phonon emission is estimated. Experimental methods for detecting impact ionization in this structure are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Aniotropy of in-plane g-factor of electrons in HgTe quantum wells

The results of experimental studies of the Shubnikov-de Haas (SdH) efect in the (013)-HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band \emph{kP} model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene vertical cascade interband terahertz and infrared photodetectors

We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and inter-GL transitions). We calculate the spectral dependences of the responsivity and detectivity for the vertical cascade interband GL- photodetectors (I-GLPDs) with different number of GLs and doping levels at different bias voltages in a wide temperature range. We show the possibility of an effective manipulation of the spectral characteristics by the applied voltage. The spectral characteristics depend also on the GL doping level that opens up the prospects of using I-GLPDs in the multi-color systems. The advantages of I-GLPDs under consideration are associated with their sensitivity to the normal incident radiation, weak temperature dependence of the dark current as well as high speed of operation. The comparison of the proposed I-GLDs with the quantum-well intersubband photodectors demonstrates the superiority of the former, including a better detectivity at room temperature and a higher speed. The vertical cascade I-GLDs can also surpass the lateral p-i-n GLDs in speed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure

We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude absorption in GLs and show that the gain can exceed the losses in metal-metal waveguides at the low end of the THz range. The spectrum of the emitted photons can be tuned by the applied voltage. A weak temperature dependence of the THz gain promotes an effective operation at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

A multiple-graphene-layer (MGL) structure with a stack of GLs and a highly conducting bottom GL on SiC substrate pumped by optical radiation is considered as an active region of terahertz (THz) and far infrared (FIR) lasers with external metal mirrors. The dynamic conductivity of the MGL structure is calculated as a function of the signal frequency, the number of GLs, and the optical pumping intensity. The utilization of optically pumped MGL structures might provide the achievement of lasing with the frequencies of about 1 THz at room temperature due to a high efficiency.

0 citations0 reviewsNo code linkedOpen access