Researcher profile

A. A. Dubinov

A. A. Dubinov contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

Impact ionization in narrow band gap CdHgTe quantum well with "resonant" band structure

Impact ionization probabilities were calculated in a CdHgTe quantum well, where the distance between electron subbands is close to the band gap energy. This band structure enables impact ionization with small momentum transfer for electrons in the second subband. The study demonstrates that such processes increase the impact ionization probability by approximately two orders of magnitude compared to the impact ionization probability for electrons in the first subband, for which transitions with small momentum changes are impossible. The probability of single impact ionization during the electron energy loss due to optical phonon emission is estimated. Experimental methods for detecting impact ionization in this structure are discussed.

preprint2014arXiv

Graphene vertical cascade interband terahertz and infrared photodetectors

We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The photodetector operation is associated with the cascaded radiative electron transitions from the valence band in GLs to the conduction band in the neighboring GLs (interband- and inter-GL transitions). We calculate the spectral dependences of the responsivity and detectivity for the vertical cascade interband GL- photodetectors (I-GLPDs) with different number of GLs and doping levels at different bias voltages in a wide temperature range. We show the possibility of an effective manipulation of the spectral characteristics by the applied voltage. The spectral characteristics depend also on the GL doping level that opens up the prospects of using I-GLPDs in the multi-color systems. The advantages of I-GLPDs under consideration are associated with their sensitivity to the normal incident radiation, weak temperature dependence of the dark current as well as high speed of operation. The comparison of the proposed I-GLDs with the quantum-well intersubband photodectors demonstrates the superiority of the former, including a better detectivity at room temperature and a higher speed. The vertical cascade I-GLDs can also surpass the lateral p-i-n GLDs in speed.

preprint2013arXiv

Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure

We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude absorption in GLs and show that the gain can exceed the losses in metal-metal waveguides at the low end of the THz range. The spectrum of the emitted photons can be tuned by the applied voltage. A weak temperature dependence of the THz gain promotes an effective operation at room temperature.

preprint2009arXiv

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

A multiple-graphene-layer (MGL) structure with a stack of GLs and a highly conducting bottom GL on SiC substrate pumped by optical radiation is considered as an active region of terahertz (THz) and far infrared (FIR) lasers with external metal mirrors. The dynamic conductivity of the MGL structure is calculated as a function of the signal frequency, the number of GLs, and the optical pumping intensity. The utilization of optically pumped MGL structures might provide the achievement of lasing with the frequencies of about 1 THz at room temperature due to a high efficiency.

preprint2009arXiv

Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides

Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate electron-hole plasma generated by optical radiation in the MGL structure and the losses in the slot or dielectric waveguide. The THz laser gain and the conditions of THz lasing are found. It is shown that the lasers under consideration can operate at frequencies > 1 THz at room temperatures.