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Researcher profile

V. V. Tugushev

V. V. Tugushev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2015arXiv

Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films

We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films.

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preprint2014arXiv

Interface induced states at the boundary between a 3D topological insulator Bi$_2$Se$_3$ and a ferromagnetic insulator EuS

By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi$_2$Se$_3$/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi$_2$Se$_3$ film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu doping on the magnetization of the Bi$_2$Se$_3$ film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi$_2$Se$_3$ heterostructure are discussed.

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preprint2014arXiv

Modeling Near-Surface Bound Electron States in Three-Dimensional Topological Insulator: Analytical and Numerical Approaches

We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological phase engineering. Using the continual model of a semi-infinite 3D TI we study the surface potential (SP) effect caused by an attached ultrathin layer of 3D NI on the formation of topological bound states at the interface. The results reveal that spatial profile and spectrum of these near-surface states strongly depend on both the sign and strength of the SP. Using ab-initio band structure calculations to take materials specificity into account, we investigate the NI/TI heterostructures formed by a single tetradymite-type quintuple or septuple layer block and the 3D TI substrate. The analytical continuum theory results relate the near-surface state evolution with the SP variation and are in good qualitative agreement with those obtained from density-functional theory (DFT) calculations. We predict also the appearance of the quasi-topological bound state on the 3D NI surface caused by a local band gap inversion induced by an overlayer.

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preprint2013arXiv

Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface

The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the 3D topological insulator/magnetic insulator (TI/MI) interface in Bi$_2$Se$_3$/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state which spectrum depends on the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone is originated from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.

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preprint2013arXiv

Magnetic proximity effect in the 3D topological insulator/ferromagnetic insulator heterostructure

We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual approach based on the $\mathbf{kp}$ Hamiltonian we predict that, when 3D TI is brought into contact with 3D FMI, the ordinary bound state arising at the TI/FMI interface becomes spin polarized due to the orbital mixing at the boundary. Whereas the wave function of FMI decays into the TI bulk on the atomic scale, the induced exchange field, which is proportional to the FMI magnetization, builds up at the scale of the penetration depth of the ordinary interface state. Such the exchange field opens the gap at the Dirac point in the energy spectrum of the topological bound state existing on the TI side of the interface. We estimate the dependence of the gap size on the material parameters of the TI/FMI contact.

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preprint2012arXiv

Noise studies of magnetization dynamics in dilute magnetic semiconductor heterostructures

We study theoretically and experimentally the frequency and temperature dependence of resistivity noise in semiconductor heterostructures delta-doped by Mn. The resistivity noise is observed to be non-monotonous as a function of frequency. As a function of temperature, the noise increases by two orders of magnitude for a resistivity increase of about 50%. We study two possible sources of resistivity noise -- dynamic spin fluctuations and charge fluctuations, and find that dynamic spin fluctuations are more relevant for the observed noise data. The frequency and temperature dependence of resistivity noise provide important information on the nature of the magnetic interactions. In particular, we show how noise measurements can help resolve a long standing debate on whether the Mn-doped GaAs is an p-d Zener/RKKY or double exchange ferromagnet. Our analysis includes the effect of different kinds of disorder such as spin-glass type of interactions and a site-dilution type of disorder. We find that the resistivity noise in these structures is well described by a disordered RKKY ferromagnet model dynamics with a conserved order parameter.

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preprint2012arXiv

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.

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preprint2010arXiv

Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys

A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (&#34;paramagnons&#34;) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Room temperature ferromagnetism and anomalous Hall effect in Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) alloys

A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

0 citations0 reviewsNo code linkedOpen access