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E. V. Chulkov

E. V. Chulkov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.str-elphysics.comp-phcond-mat.supr-con

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Published work

48 published item(s)

preprint2022arXiv

Interplay between exchange split Dirac and Rashba-type surface states in MnBi$_2$Te$_4$/BiTeI interface

Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms natural expansion of the substrate, when Dirac cone state locates mostly in the polar overlayer region and undergoes slight exchange splitting, Te-I contact is the source of four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state are lifted, what produces Hall response in transport regime. We believe, our findings provide new opportunities to construct novel type spintronic devices.

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preprint2020arXiv

Collective excitations and universal broadening of cyclotron absorption in Dirac semimetals in a quantizing magnetic field

The spectrum of electromagnetic collective excitations in Dirac semimetals placed in a quantizing magnetic field is considered. We have found the Landau damping regions using the energy and momentum conservation law for allowed transitions between one-particle states of electron excitations. Analysis of dispersion equations for longitudinal and transverse waves near the window boundaries in the Landau damping regions reveals different types of collective excitations. We also indicate the features of universal broadening of cyclotron absorption for a magnetic field variation in systems with linear dispersion of the electron spectrum. The use of the obtained spectrum also allows us to predict a number of oscillation and resonance effects in the field of magneto-optical phenomena.

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preprint2020arXiv

Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$

With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications.

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preprint2020arXiv

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$

Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.

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preprint2020arXiv

Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials

Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.

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preprint2019arXiv

Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family

Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.

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preprint2016arXiv

Adsorption geometry and electronic properties of flat-lying monolayers of tetracene on the Ag(111) surface

The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $γ$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the exchange-correlation functional. The binding energy is entirely determined by the long-range dispersive interaction. The former lowest unoccupied orbital remains being unoccupied in the case of $γ$-Tc/Ag(111) as well as in the $α$-phase with increased coverage. The unit cell of the $α$-phase with point-on-line registry was adapted for calculations based on the available experimental data and the computed structures of the $γ$-phase. The calculated position of the Tc/Ag(111) interface state is found to be noticeably dependent on the lattice constant of the substrate, however its energy shift with respect to the Shockley surface state of the unperturbed clean side of the slab is sensitive only to the adsorption distance and in good agreement with the experimentally measured energy shift.

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preprint2016arXiv

Pressure effects on crystal and electronic structure of bismuth tellurohalides

We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the formation of an intermediate phase, a Weyl semimetal, that leads to modification of surface state dispersions. In the topologically trivial phase, the surface states exhibit a Bychkov-Rashba type dispersion. The Weyl semimetal phase exists in a narrow pressure interval of 0.2 GPa. After the Weyl semimetal--TI transition occurs, the surface electronic structure is characterized by gapless states with linear dispersion. The peculiarities of the surface states modification under pressure depend on the band-bending effect. We have also calculated the frequencies of Raman active modes for BiTeI in the proposed high-pressure crystal phases in order to compare them with available experimental data. Unlike BiTeI, in BiTeBr and BiTeCl the topological phase transition does not occur. In BiTeBr, the crystal structure changes with pressure but the phase remains a trivial one. However, the transition appears to be possible if the low-pressure crystal structure is retained. In BiTeCl under pressure, the topological phase does not appear up to 18 GPa due to a relatively large band gap width in this compound.

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preprint2016arXiv

Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys

Weyl fermions have recently been observed in several time-reversal-invariant semimetals and photonics materials with broken inversion symmetry. These systems are expected to have exotic transport properties such as the chiral anomaly. However, most discovered Weyl materials possess a substantial number of Weyl nodes close to the Fermi level that give rise to complicated transport properties. Here we predict, for the first time, a new family of Weyl systems defined by broken time-reversal symmetry, namely, Co-based magnetic Heusler materials XCo2Z (X = IVB or VB; Z = IVA or IIIA). To search for Weyl fermions in the centrosymmetric magnetic systems, we recall an easy and practical inversion invariant, which has been calculated to be -1, guaranteeing the existence of an odd number of pairs of Weyl fermions. These materials exhibit, when alloyed, only two Weyl nodes at the Fermi level - the minimum number possible in a condensed matter system. The Weyl nodes are protected by the rotational symmetry along the magnetic axis and separated by a large distance (of order 2$π$) in the Brillouin zone. The corresponding Fermi arcs have been calculated as well. This discovery provides a realistic and promising platform for manipulating and studying the magnetic Weyl physics in experiments.

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preprint2015arXiv

Electron-phonon relaxation and excited electron distribution in gallium nitride

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy 'tail' covers largely the conduction band. The shape of the high-energy 'tail' strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi 'tail' is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can affect essentially the charge transport in the irradiated and highly doped semiconductors.

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preprint2015arXiv

Inelastic Decay of Electrons in the Shockley-type Metal-Organic Interface States

We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer deposition plays a minor role in the phase space for electron decay, and hence weakly affects the resulting lifetimes. The presence of the unoccupied molecular states below the IS gives a small contribution to the IS decay rate mostly determined by the change of the phase space of bulk states upon the energy shift of the IS. The calculated lifetimes follow the experimentally observed trends. In particular, we explain the trend of the unusual increase of the IS lifetimes with rising temperature.

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preprint2015arXiv

Origin of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves

The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultra-short spin diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi interface. The spin-current-induced charge current is found to change direction with increasing temperature. A theoretical analysis relates this behavior to the complex spin structure and dispersion of the surface states at the Fermi energy. The understanding of this phenomenon opens novel possibilities to exploit spin-orbit coupling to create, manipulate, and detect spin currents in 2D systems.

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preprint2014arXiv

Ab initio lattice dynamics and electron-phonon coupling of Bi(111)

We present a comprehensive ab initio study of structural, electronic, lattice dynamical and electron-phonon coupling properties of the Bi(111) surface within density functional perturbation theory. Relativistic corrections due to spin-orbit coupling are consistently taken into account. As calculations are carried out in a periodic slab geometry, special attention is given to the convergence with respect to the slab thickness. Although the electronic structure of Bi(111) thin films varies significantly with thickness, we found that the lattice dynamics of Bi(111) is quite robust and appears converged already for slabs as thin as 6 bilayers. Changes of interatomic couplings are confined mostly to the first two bilayers, resulting in super-bulk modes with frequencies higher than the optic bulk spectrum, and in an enhanced density of states at lower frequencies for atoms in the first bilayer. Electronic states of the surface band related to the outer part of the hole Fermi surfaces exhibit a moderate electron-phonon coupling of about 0.45, which is larger than the coupling constant of bulk Bi. States at the inner part of the hole surface as well as those forming the electron pocket close to the zone center show much increased couplings due to transitions into bulk projected states near Gamma_bar. For these cases, the state dependent Eliashberg functions exhibit pronounced peaks at low energy and strongly deviate in shape from a Debye-like spectrum, indicating that an extraction of the coupling strength from measured electronic self-energies based on this simple model is likely to fail.

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preprint2014arXiv

Interface induced states at the boundary between a 3D topological insulator Bi$_2$Se$_3$ and a ferromagnetic insulator EuS

By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi$_2$Se$_3$/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi$_2$Se$_3$ film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu doping on the magnetization of the Bi$_2$Se$_3$ film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi$_2$Se$_3$ heterostructure are discussed.

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preprint2014arXiv

Modeling Near-Surface Bound Electron States in Three-Dimensional Topological Insulator: Analytical and Numerical Approaches

We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological phase engineering. Using the continual model of a semi-infinite 3D TI we study the surface potential (SP) effect caused by an attached ultrathin layer of 3D NI on the formation of topological bound states at the interface. The results reveal that spatial profile and spectrum of these near-surface states strongly depend on both the sign and strength of the SP. Using ab-initio band structure calculations to take materials specificity into account, we investigate the NI/TI heterostructures formed by a single tetradymite-type quintuple or septuple layer block and the 3D TI substrate. The analytical continuum theory results relate the near-surface state evolution with the SP variation and are in good qualitative agreement with those obtained from density-functional theory (DFT) calculations. We predict also the appearance of the quasi-topological bound state on the 3D NI surface caused by a local band gap inversion induced by an overlayer.

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preprint2014arXiv

Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics

Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to make graphene Dirac states spin-polarized. Here, we report on absolutely new promising pathway to create spin-polarized Dirac states based on coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We demonstrate how the spin-helical Dirac states are formed in graphene deposited on the surface of BiTeCl. This coupling induces spin separation of the originally spin-degenerate graphene states and results in fully helical in-plane spin polarization of the Dirac electrons.

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preprint2013arXiv

Ab initio study of low-energy electronic collective excitations in bulk Pb: anisotropy and acoustic modes

A theoretical study of the dynamical dielectric response of bulk lead at low energies is presented. The calculations are performed with full inclusion of the electron band structure calculated by means of a first-principles pseudopotential approach. The effect of including the spin-orbit splittings in the band structure is analyzed, together with dynamical exchange-correlation and local-field effects. Excitations are studied in detail, showing the presence at small momenta of acoustic-like dispersing excitations. The character of these modes with sound-like dispersion depends on the direction of the momentum transfer q. In general results show strong anisotropy effects on the dielectric response of bulk Pb. Comparison with available optical experimental data shows good agreement.

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preprint2013arXiv

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.

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preprint2013arXiv

Exchange interaction and its tuning in magnetic binary chalcogenides

Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into magnetic interactions in magnetic binary chalcogenides and open a way to design new materials for promising applications.

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preprint2013arXiv

Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface

The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the 3D topological insulator/magnetic insulator (TI/MI) interface in Bi$_2$Se$_3$/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state which spectrum depends on the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone is originated from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.

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preprint2013arXiv

Magnetic proximity effect in the 3D topological insulator/ferromagnetic insulator heterostructure

We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual approach based on the $\mathbf{kp}$ Hamiltonian we predict that, when 3D TI is brought into contact with 3D FMI, the ordinary bound state arising at the TI/FMI interface becomes spin polarized due to the orbital mixing at the boundary. Whereas the wave function of FMI decays into the TI bulk on the atomic scale, the induced exchange field, which is proportional to the FMI magnetization, builds up at the scale of the penetration depth of the ordinary interface state. Such the exchange field opens the gap at the Dirac point in the energy spectrum of the topological bound state existing on the TI side of the interface. We estimate the dependence of the gap size on the material parameters of the TI/FMI contact.

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preprint2013arXiv

Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides

We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account many-body effects is crucial to interpret the available experimental data.

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preprint2013arXiv

New topological surface state in layered topological insulators: unoccupied Dirac cone

The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap at the center of the surface Brillouin zone on the (0001) surface of these insulators. The alternative expression of Z_2 invariant allowed us to show that a necessary condition for the existence of the second Gamma Dirac cone is the presence of local gaps at the time reversal invariant momentum points of the bulk spectrum and change of parity in one of these points.

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preprint2013arXiv

Quantum effects on the loss function of Pb(111) thin films: an ab initio study

A theoretical study of the surface energy-loss function of freestanding Pb(111) thin films is presented, starting from the single monolayer case. The calculations are carried applying the linear response theory, with inclusion of the electron band structure by means of a first-principles pseudopotential approach using a supercell scheme. Quantum-size effects on the plasmon modes of the thinnest films are found in qualitative agreement with previous work based on the jellium model. For thicker films, results show a dispersionless mode at all thicknesses, in agreeement with electron energy-loss measurements. For sizeable values of the momentum, the raising of the surface plasmon with increasing thickness is retrieved.

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preprint2013arXiv

Rashba split surface states in BiTeBr

Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter α_R ~ 2 eVÅ.

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preprint2013arXiv

Strong ferromagnetism at the surface of an antiferromagnet caused by buried magnetic moments

Carrying a large, pure spin magnetic moment of 7 $μ$bohr/atom in the half-filled 4f shell, divalent europium is an outstanding element for assembling novel magnetic devices in which a two-dimensional electron gas (2DEG) is polarized due to exchange interaction with an underlying magnetically-active Eu layer, even in the absence of a magnetic field. A natural example for such geometry is the intermetallic layered material EuRh$_2$Si$_2$, in which magnetically active layers of Eu are well separated from each other by non-magnetic Si-Rh-Si trilayers. Applying angle-resolved photoelectron spectroscopy (ARPES) to this system, we discovered a large spin splitting of a Shockley-type surface state formed by itinerant electrons of the Si-Rh-Si surface related trilayer. ARPES shows that the splitting sets in below approx. 32.5K and quickly saturates to around 150meV upon cooling. Interestingly, this temperature is substantially higher than the order temperature of the Eu 4f moments (approx. 24.5K) in the bulk. Our results clearly show that the magnetic exchange interaction between the surface state and the buried 4f moments in the 4th subsurface layer is the driving force for the formation of itinerant ferromagnetism at the surface. We demonstrate that the observed spin splitting of the surface state, reflecting properties of 2DEG, is easily controlled by temperature. Such a splitting may also be induced into states of functional surface layers deposited onto the surface of EuRh$_2$Si$_2$ or similarly ordered magnetic materials with metallic or semiconducting properties.

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preprint2013arXiv

The quasiparticle band gap in the topological insulator Bi2Te3

We present a theoretical study of dispersion of states which form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varying within the error range of the available experimental data and approximation chosen for the exchange-correlation functional on the bulk band gap and k-space location of valence- and conduction-band extrema. For each set of the positions with different exchange-correlation functionals, we show how many-body corrections calculated within a one-shot GW approach affect the mentioned characteristics of electronic structure of Bi2Te3. We thus also illustrate to what degree the one-shot GW results are sensitive to the reference one-particle band structure in the case of bismuth telluride. We found that for this topological insulator the GW corrections enlarge the fundamental band gap and for certain atomic positions and reference band structure bring its value in close agreement with experiment.

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preprint2013arXiv

Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se

Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong warping of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over the wide energy range and opens a way to designing opto-spintronic devices.

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preprint2012arXiv

Electron-phonon relaxation and excited electron distribution in zinc oxide and anatase

We propose a first-principle method for evaluations of the time-dependent electron distribution function of excited electrons in the conduction band of semiconductors. The method takes into account the excitations of electrons by external source and the relaxation to the bottom of conduction band via electron-phonon coupling. The methods permits calculations of the non-equilibrium electron distribution function, the quasi-stationary distribution function with steady-in-time source of light, the time of setting of the quasi-stationary distribution and the time of energy loss via relaxation to the bottom of conduction band. The actual calculations have been performed for titanium dioxide in the anatase structure and zinc oxide in the wurtzite structure. We find that the quasi-stationary electron distribution function for ZnO is a fermi-like curve that rises linearly with increasing excitation energy whereas the analogous curve for anatase consists of a main peak and a shoulder. The calculations demonstrate that the relaxation of excited electrons and the setting of the quasi-stationary distribution occur within the time no more than 500 fsec for ZnO and 100 fsec for anatase. We also discuss the applicability of the effective phonon model with energy-independent electron-phonon transition probability. We find that the model only reproduces the trends in changing of the characteristic times whereas the precision of such calculations is not high. The rate of energy transfer to phonons at the quasi-stationary electron distribution also have been evaluated and the effect of this transfer on the photocatalyses has been discussed. We found that for ZnO this rate is about 5 times less than in anatase.

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preprint2012arXiv

Experimental verification of PbBi$_{2}$Te$_{4}$ as a 3D topological insulator

The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological invariants $\mathbb{Z}_2$ are calculated from the {\it ab initio} band structure to be 1; (111). The observed two-dimensional iso-energy contours in the bulk energy gap are found to be the largest among the known three-dimensional topological insulators. This opens a pathway to achieving a sufficiently large spin current density in future spintronic devices.

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preprint2012arXiv

Observation of a Highly Spin Polarized Topological Surface State in GeBi$_{2}$Te$_{4}$

Spin polarization of a topological surface state for GeBi$_2$Te$_4$, the newly discovered three-dimensional topological insulator, has been studied by means of the state of the art spin- and angle-resolved photoemission spectroscopy. It has been revealed that the disorder in the crystal has a minor effect on the surface state spin polarization and it exceeds 75% near the Dirac point in the bulk energy gap region ($\sim$180 meV). This new finding for GeBi$_{2}$Te$_{4}$ promises not only to realize a highly spin polarized surface isolated transport but to add new functionality to its thermoelectric and thermomagnetic properties.

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preprint2012arXiv

Topological Surface States with Persistent High Spin Polarization across Dirac Point in Bi$_{2}$Te$_{2}$Se and Bi$_{2}$Se$_{2}$Te

Helical spin textures with the marked spin polarizations of topological surface states have been firstly unveiled by the state-of-the-art spin- and angle-resolved photoemission spectroscopy for two promising topological insulators Bi$_2$Te$_2$Se and Bi$_2$Se$_2$Te. The highly spin-polarized natures are found to be persistent across the Dirac point in both compounds. This novel finding paves a pathway to extending their utilization of topological surface state for future spintronic applications.

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preprint2012arXiv

Unoccupied Topological States on Bismuth Chalcogenides

The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi$_2$Se$_3$ and Bi$_2$Te$_2$Se. In Bi$_2$Te$_3$ small structural variations can change the character of the local energy gap depending on which an unoccupied Dirac state does or does not exist. Circular dichroism measurements confirm the expected spin texture. From these findings we assign the observed state to an unoccupied topological surface state.

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preprint2011arXiv

Energy Shift and Wavefunction Overlap of Metal-Organic Interface-States

The properties of Shockley-type interface states between $π$-conjugated organic molecular layers and metal surfaces are investigated by time-resolved two-photon photoemission experiments and density functional theory. For perylene- and naphthalene-tetracarboxylic acid dianhydride (PTCDA and NTCDA) adsorbed on Ag(111), a common mechanism of formation of the interface state from the partly occupied surface state of the bare Ag(111) is revealed. The energy position is found to be strongly dependent on the distance of the molecular carbon rings from the metal and their surface density. Bending of the carboxyl groups enhances the molecular overlap of the interface state.

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preprint2011arXiv

New interpretation of the origin of 2DEG states at the surface of layered topological insulators

On the basis of relativistic ab-initio calculations we show that the driving mechanism of simultaneous emergence of parabolic and M-shaped 2D electron gas (2DEG) bands at the surface of layered topological insulators as well as Rashba-splitting of the former states is an expansion of van der Waals (vdW) spacings caused by intercalation of metal atoms or residual gases. The expansion of vdW spacings and emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of interband scattering found experimentally.

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preprint2011arXiv

Quasiparticle interference on the surface of 3D topological insulator Bi$_{2}$Se$_{3}$ induced by cobalt adatom in the absence of ferromagnetic ordering

Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long-range magnetic order is found to be absent, and the surface state Dirac cone remains gapless. The anisotropy of the standing wave is ascribed to the heavily warped iso-energy contour of unoccupied states, where the scattering is allowed due to a non-zero out-of-plane spin.

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preprint2011arXiv

Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation

We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Waals gaps and the detachment of topmost QLs from the bulk crystal. This leads to a relocation (in the real space) of the the topological state beneath the detached quintuple layers, accompanied by the emergence of parabolic and "M-shaped" trivial bands localized above the relocated topological states. These novel findings open a pathway to the engineering of Dirac fermions shielded from the ambient contamination and may facilitate the realization of fault-tolerant quantum devices.

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preprint2011arXiv

Surface Scattering via Bulk Continuum States in the 3D Topological Insulator Bi$_{2}$Se$_{3}$

We have performed scanning tunneling microscopy and differential tunneling conductance ($dI/dV$) mapping for the surface of the three dimensional topological insulator Bi$_{2}$Se$_{3}$. The fast Fourier transformation applied to the $dI/dV$ image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap region. The comparison of the present experimental result with theoretical surface and bulk band structures shows that the electron interference occurs through the scattering between the surface states near the Dirac node and the bulk continuum states.

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preprint2010arXiv

Ab initio study of origin and properties of a metal-organic interface state of the PTCDA/Ag(111) system

We present a detailed study of a monolayer film of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) on Ag(111) (the PTCDA/Ag(111) system). The study is done within density functional theory with the use of the periodic slab model. The slab is chosen to contain a PTCDA monolayer film on a silver thin film of different thicknesses (6, 9, and 12 layers) with the (111) orientation. We show that one of two surface states of the pure Ag(111) films transforms into an unoccupied interface state due to the adsorbate-substrate interaction. The relation of the resulting state to the unoccupied state that has been experimentally observed in the PTCDA/Ag(111) system by scanning tunneling and two photon photoemission spectroscopy is discussed.

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preprint2010arXiv

First principles quasiparticle damping rates in bulk lead

First principles calculations of the damping rates (inverse inelastic lifetimes) of low energy quasiparticles in bulk Pb are presented. Damping rates are obtained both for excited electrons and holes with energies up to 8 eV on a set of k vectors throughout the Brillouin zone (BZ). Strong localization effects in the calculated lifetimes are found. Averaged over the BZ inelastic lifetimes versus quasiparticle energy are reported as well. In addition, the effect of the spin-orbit induced splitting in the band structure on the calculated lifetimes in Pb is investigated.

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preprint2010arXiv

Inelastic decay rate of quasiparticles in a two-dimensional spin-orbit coupled electron system

We present a study of the inelastic decay rate of quasiparticles in a two-dimensional electron gas with spin-orbit interaction. The study is done within the G0W0 approximation. The spin-orbit interaction is taken in the most general form that includes both Rashba and Dresselhaus contributions linear in magnitude of the electron 2D momentum. Spin-orbit interaction effect on the inelastic decay rate is examined at different parameters characterizing the interaction strength in the electron gas.

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preprint2010arXiv

Potential Energy Landscape for hot electrons in periodically nanostructured graphene

We explore the spatial variations of the unoccupied electronic states of graphene epitaxially grown on Ru(0001) and observed three unexpected features: the first graphene image state is split in energy, unlike all other image states, the split state does not follow the local work function modulation, and a new interfacial state at +3 eV appears on some areas of the surface. These results show the system behaves as a self-organized periodic array of quantum dots.

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preprint2010arXiv

Quasiparticle dynamics in ferromagnetic compounds of the Co-Fe and Ni-Fe systems

We report a theoretical study of the quasiparticle lifetime and the quasiparticle mean free path caused by inelastic electron-electron scattering in ferromagnetic compounds of the Co-Fe and Ni-Fe systems. The study is based on spin-polarized calculations, which are performed within the $GW$ approximation for equiatomic and Co- and Ni-rich compounds, as well as for their constituents. We mainly focus on the spin asymmetry of the quasiparticle properties, which leads to the spin-filtering effect experimentally observed in spin-dependent transport of hot electrons and holes in the systems under study. By comparing with available experimental data on the attenuation length, we estimate the contribution of the inelastic mean free path to the latter.

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preprint2009arXiv

Ab initio calculation of low-energy collective charge-density excitations in MgB2

We present {\it ab-initio} time-dependent density-functional theory calculation results for low-energy collective electron excitations in $\textrm{MgB}_2$. The existence of a long-lived collective excitation corresponding to coherent charge density fluctuations between the boron $σ$- and $π$- bands ($σπ$ mode) is demonstrated. This mode has a sine-like oscillating dispersion for energies below 0.5 eV. At even lower energy we find another collective mode ($σσ$ mode). We show the strong impact of local-field effects on dielectric functions in MgB$_2$. These effects account for the long q-range behavior of the modes. We discuss the physics that these collective excitations bring to the energy region typical for lattice vibrations.

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preprint2008arXiv

Band structure effects on the Be(0001) acoustic-surface-plasmon energy dispersion

We report first-principles calculations of acoustic surface plasmons on the (0001) surface of Be, as obtained in the random-phase approximation of many-body theory. The energy dispersion of these collective excitations has been obtained along two symmetry directions. Our results show a considerable anisotropy of acoustic surface plasmons, and underline the capability of experimental measurements of these plasmons to {\it map} the electron-hole excitation spectrum of the quasi two-dimensional Shockley surface state band that is present on the Be(0001) surface.

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preprint2006arXiv

Experimental time-resolved photoemission and ab initio study of lifetimes of excited electrons in Mo and Rh

We have studied the relaxation dynamics of optically excited electrons in molybdenum and rhodium by means of time resolved two-photon photoemission spectroscopy (TR-2PPE) and ab initio electron self-energy calculations performed within the GW and GW+T approximations. Both theoretical approaches reproduce qualitatively the experimentally observed trends and differences in the lifetimes of excited electrons in molybdenum and rhodium. For excitation energies exceeding the Fermi energy by more than 1 eV, the GW+T theory yields lifetimes in quantitative agreement with the experimental results. As one of the relevant mechanisms causing different excited state lifetime in Mo and Rh we identify the occupation of the 4d bands. An increasing occupation of the 4d bands results in an efficient decrease of the lifetime even for rather small excitation energies of a few 100 meV.

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preprint2005arXiv

Role of elastic scattering in electron dynamics at ordered alkali overlayers on Cu(111)

Scanning tunneling spectroscopy of p(2x2) Cs and Na ordered overlayers on Cu(111) reveals similar line widths of quasi two-dimensional quantum well states despite largely different binding energies. Detailed calculations show that 50% of the line widths are due to electron-phonon scattering while inelastic electron-electron scattering is negligible. A frequently ignored mechanism for ordered structures, i.e., enhanced elastic scattering due to Brillouin zone back folding, contributes the remaining width.

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preprint2004arXiv

The role of the spin in quasiparticle interference

Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems the spin of the quasiparticles can have a profound effect on the interference patterns. On Bi(110), where the surface state bands are not spin-degenerate, the patterns are not related to the dispersion of the electronic states in a simple way. In fact, the features which are expected for the spin-independent situation are absent and the observed interference patterns can only be interpreted by taking spin-conserving scattering events into account.

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