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B. A. Aronzon

B. A. Aronzon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2015arXiv

Resonant indirect exchange via remote 2D channel

We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Noise studies of magnetization dynamics in dilute magnetic semiconductor heterostructures

We study theoretically and experimentally the frequency and temperature dependence of resistivity noise in semiconductor heterostructures delta-doped by Mn. The resistivity noise is observed to be non-monotonous as a function of frequency. As a function of temperature, the noise increases by two orders of magnitude for a resistivity increase of about 50%. We study two possible sources of resistivity noise -- dynamic spin fluctuations and charge fluctuations, and find that dynamic spin fluctuations are more relevant for the observed noise data. The frequency and temperature dependence of resistivity noise provide important information on the nature of the magnetic interactions. In particular, we show how noise measurements can help resolve a long standing debate on whether the Mn-doped GaAs is an p-d Zener/RKKY or double exchange ferromagnet. Our analysis includes the effect of different kinds of disorder such as spin-glass type of interactions and a site-dilution type of disorder. We find that the resistivity noise in these structures is well described by a disordered RKKY ferromagnet model dynamics with a conserved order parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys

A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations ("paramagnons") in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Room temperature ferromagnetism and anomalous Hall effect in Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) alloys

A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement.

0 citations0 reviewsNo code linkedOpen access