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V. V. Cheianov

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Published work

4 published item(s)

preprint2011arXiv

Tunable metal-insulator transition in double-layer graphene heterostructures

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a minimum metallic conductivity at the neutrality point, and its resistivity diverges at low temperatures. This divergence can be suppressed by magnetic field or by reducing the carrier density in the adjacent layer. We believe that the observed localization is intrinsic for neutral graphene with generic disorder if metallic electron-hole puddles are screened out.

preprint2009arXiv

Dynamical properties of the one-dimensional spin-1/2 Bose-Hubbard model near Mott-insulator to ferromagnetic liquid transition

We investigate the dynamics of the one-dimensional strongly repulsive spin-1/2 Bose-Hubbard model for filling $ν\le1.$ While at $ν=1$ the system is a Hubbard-Mott insulator exhibiting dynamical properties of the Heisenberg ferromagnet, at $ν<1$ it is a ferromagnetic liquid with complex spin dynamics. We find that close to the insulator-liquid transition the system admits for a complete separation of spin and density degrees of freedom valid at {\it all} energy and momentum scales within the $t-J$ approximation. This allows us to derive the propagator of transverse spin waves and the shape of the magnon peak in the dynamic spin structure factor.

preprint2009arXiv

Edge exponent in the dynamic spin structure factor of the Yang-Gaudin model

The dynamic spin structure factor $\mathcal{S}(k,ω)$ of a system of spin-1/2 bosons is investigated at arbitrary strength of interparticle repulsion. As a function of $ω$ it is shown to exhibit a power-law singularity at the threshold frequency defined by the energy of a magnon at given $k.$ The power-law exponent is found exactly using a combination of the Bethe Ansatz solution and an effective field theory approach.

preprint2009arXiv

Partial Kekule Ordering of Adatoms on Graphene

Electronic and transport properties of Graphene, a one-atom thick crystalline material, are sensitive to the presence of atoms adsorbed on its surface. An ensemble of randomly positioned adatoms, each serving as a scattering center, leads to the Bolzmann-Drude diffusion of charge determining the resistivity of the material. An important question, however, is whether the distribution of adatoms is always genuinely random. In this Article we demonstrate that a dilute adatoms on graphene may have a tendency towards a spatially correlated state with a hidden Kekule mosaic order. This effect emerges from the interaction between the adatoms mediated by the Friedel oscillations of the electron density in graphene. The onset of the ordered state, as the system is cooled below the critical temperature, is accompanied by the opening of a gap in the electronic spectrum of the material, dramatically changing its transport properties.