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V. R. Kortan

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Nanometer-scale Exchange Interactions Between Spin Centers in Diamond

Exchange interactions between isolated pairs of spin centers in diamond have been calculated, based on an accurate atomistic electronic structure for diamond and any impurity atoms, for spin-center separations up to 2~nm. The exchange interactions exceed dipolar interactions for spin center separations less than 3~nm. NV$^-$ spin centers, which are extended defects, interact very differently depending on the relative orientations of the symmetry axis of the spin center and the radius vector connecting the pair. Exchange interactions between transition-metal dopants behave similarly to those of NV$^-$ centers. The Mn\---Mn exchange interaction decays with a much longer length scale than the Cr\---Cr and Ni\---Ni exchange interactions, exceeding dipolar interactions for Mn\---Mn separations less than 5~nm. Calculations of these highly anisotropic and spin-center-dependent interactions provide the potential for design of the spin-spin interactions for novel nanomagnetic structures.

preprint2015arXiv

Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope

We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energy of a single Fe atom embedded in GaAs as a function of displacement from the substitutional site support the interpretation of a reversible lattice displacement of the Fe dopant. Our calculations indicate a second stable configuration for the Fe dopant within the lattice, characterized by a displacement along the [111] axis, accompanied by a change in atomic configuration symmetry about the Fe from four-fold to six-fold symmetry. The resulting atomic configurations are then used within a tight-binding calculation to determine the effect of a Fe position shift on the topography. These results expand the range of demonstrated local configurational changes induced electronically for dopants, and thus may be of use for sensitive control of dopant properties and dopant-dopant interactions.

preprint2012arXiv

Valence state manipulation of single Fe impurities in GaAs by STM

The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.