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P. M. Koenraad

P. M. Koenraad appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

14 published item(s)

preprint2020arXiv

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the local electronic structure of isovalent Bi atoms in InP

Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a highly anisotropic bowtie-like structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\left\langle 110\right\rangle$ directions, which define the bowtie-like structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge towards higher energies. This is in good agreement to first principles calculations. Furthermore, we show that the energetic position of the Bi induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope

We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energy of a single Fe atom embedded in GaAs as a function of displacement from the substitutional site support the interpretation of a reversible lattice displacement of the Fe dopant. Our calculations indicate a second stable configuration for the Fe dopant within the lattice, characterized by a displacement along the [111] axis, accompanied by a change in atomic configuration symmetry about the Fe from four-fold to six-fold symmetry. The resulting atomic configurations are then used within a tight-binding calculation to determine the effect of a Fe position shift on the topography. These results expand the range of demonstrated local configurational changes induced electronically for dopants, and thus may be of use for sensitive control of dopant properties and dopant-dopant interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ferromagnetic Mn doped InSb studied at the atomic scale by cross-sectional STM

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb that is ferromagnetic at room-temperature. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy. The measurements show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration obtained from the cross-sectional STM data compares well with the intended doping concentration. No second phase material or (nano)clustering of the Mn was observed. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location is clearly noted. We discuss the implications of the observed disorder for a number of suggested explanations of the room-temperature ferromagnetism in Mn doped InSb grown by metal-organic vapor epitaxy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion

Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a height of ~2 nm showed resolution-limited spectral lines (<120 micro eV). The measured height dependence of the linewidths is in good agreement with Stark coefficients calculated for the experimental shape variation. We attribute the microscopic source of fluctuating electric fields to the random motion of surface charges at the vacuum-semiconductor interface. Our results offer guidelines for creating frequency-locked photon sources, which will serve as key devices for long-distance quantum key distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures

Circulating orbital currents, originating from the spin-orbit interaction, are calculated for semiconductor nanostructures in the shape of spheres, disks, spherical shells and rings for the electron ground state with spin oriented along a symmetry axis. The currents and resulting orbital and spin magnetic moments, which combine to yield the effective electron g factor, are calculated using a recently introduced formalism that allows the relative contributions of different regions of the nanostructure to be identified. For all these spherically or cylindrically symmetric hollow or solid nanostructures, independent of material composition and whether the boundary conditions are hard or soft, the dominant orbital current originates from intermixing of valence band states in the electron ground state, circulates within the nanostructure, and peaks approximately halfway between the center and edge of the nanostructure in the plane perpendicular to the spin orientation. For a specific material composition and confinement character, the confinement energy and orbital moment are determined by a single size-dependent parameter for spherically symmetrical nanostructures, whereas they can be independently tuned for cylindrically symmetric nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-orbit-induced circulating currents in a semiconductor nanostructure

Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for $g=0$) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field

We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Valence state manipulation of single Fe impurities in GaAs by STM

The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Composition profiling InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunnelling microscopy

This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration profiles measured by each method. We show that computational models of the wetting layer and the QDs, based on experimental data, are consistent with both analytical approaches. This establishes a link between the two techniques and shows their complimentary behaviour, an advantage which we exploit in order to highlight unique features of the examined QD material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots

The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g-factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band k.p simulations, performed using realistic dot parameters extracted from cross-sectional scanning tunneling microscopy, reveal that a quadratic contribution to the Zeeman energy originates from a spin dependent mixing of heavy and light hole orbital states in the dot. The dilute In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots investigated is shown to strongly enhance the non-linear excitonic Zeeman gap, providing a blueprint to enhance such magnetic non-linearities via growth engineering.

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