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M. E. Flatté

M. E. Flatté appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-sciquant-phcond-mat.other

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Published work

26 published item(s)

preprint2021arXiv

Raman Spectroscopy and Aging of the Low-Loss Ferrimagnet Vanadium Tetracyanoethylene

Vanadium tetracyanoethylene (V[TCNE]$_{x}$, $x\approx 2$) is an organic-based ferrimagnet with a high magnetic ordering temperature $\mathrm{T_C>600 ~K}$, low magnetic damping, and growth compatibility with a wide variety of substrates. However, similar to other organic-based materials, it is sensitive to air. Although encapsulation of V[TCNE]$_{x}$ with glass and epoxy extends the film lifetime from an hour to a few weeks, what is limiting its lifetime remains poorly understood. Here we characterize encapsulated V[TCNE]$_{x}$ films using confocal microscopy, Raman spectroscopy, ferromagnetic resonance and SQUID magnetometry. We identify the relevant features in the Raman spectra in agreement with \textit{ab initio} theory, reproducing $\mathrm{C=C,C\equiv N}$ vibrational modes. We correlate changes in the effective dynamic magnetization with changes in Raman intensity and in photoluminescence. Based on changes in Raman spectra, we hypothesize possible structural changes and aging mechanisms in V[TCNE]$_x$. These findings enable a local optical probe of V[TCNE]$_{x}$ film quality, which is invaluable in experiments where assessing film quality with local magnetic characterization is not possible.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ($a$-Fe$_x$Ge$_{1-x}$) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of \aFeGe is well explained by the Stoner model for Fe concentrations $x$ above the onset of magnetic order around $x=0.4$, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-$3d$ states sufficiently to polarize the electronic structure despite $\mathbf{k}$ being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity $ρ_{xy}^{\mathrm{AH}}$ relative to crystalline FeGe; this $ρ_{xy}^{\mathrm{AH}}$ is compared to density functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied $\mathbf{k}$-states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of $a$-Fe$_x$Ge$_{1-x}$ ($0.38 \leq x \leq 0.61$). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to $\mathbf{k}$-space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the local electronic structure of isovalent Bi atoms in InP

Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled state X-STM images on the natural $\{110\}$ cleavage planes. The Bi impurity state has a highly anisotropic bowtie-like structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $\left\langle 110\right\rangle$ directions, which define the bowtie-like structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge towards higher energies. This is in good agreement to first principles calculations. Furthermore, we show that the energetic position of the Bi induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanometer-scale Exchange Interactions Between Spin Centers in Diamond

Exchange interactions between isolated pairs of spin centers in diamond have been calculated, based on an accurate atomistic electronic structure for diamond and any impurity atoms, for spin-center separations up to 2~nm. The exchange interactions exceed dipolar interactions for spin center separations less than 3~nm. NV$^-$ spin centers, which are extended defects, interact very differently depending on the relative orientations of the symmetry axis of the spin center and the radius vector connecting the pair. Exchange interactions between transition-metal dopants behave similarly to those of NV$^-$ centers. The Mn\---Mn exchange interaction decays with a much longer length scale than the Cr\---Cr and Ni\---Ni exchange interactions, exceeding dipolar interactions for Mn\---Mn separations less than 5~nm. Calculations of these highly anisotropic and spin-center-dependent interactions provide the potential for design of the spin-spin interactions for novel nanomagnetic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nonlocal Drag of Magnons in a Ferromagnetic Bilayer

Quantized spin waves, or magnons, in a magnetic insulator are assumed to interact weakly with the surroundings, and to flow with little dissipation or drag, producing exceptionally long diffusion lengths and relaxation times. In analogy to Coulomb drag in bilayer two dimensional electron gases, in which the contribution of the Coulomb interaction to the electric resistivity is studied by measuring the interlayer resistivity (transresistivity), we predict a nonlocal drag of magnons in a ferromagnetic bilayer structure based on semiclassical Boltzmann equations. Nonlocal magnon drag depends on magnetic dipolar interactions between the layers and manifests in the magnon current transresistivity and the magnon thermal transresistivity, whereby a magnon current in one layer induces a chemical potential gradient and/or a temperature gradient in the other layer. The largest drag effect occurs when the magnon current flows parallel to the magnetization, however for oblique magnon currents a large transverse current of magnons emerges. We examine the effect for practical parameters, and find that the predicted induced temperature gradient is readily observable.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optomagnonics in Magnetic Solids

Coherent conversion of photons to magnons, and back, provides a natural mechanism for rapid control of interactions between stationary spins with long coherence times and high-speed photons. Despite the large frequency difference between optical photons and magnons, coherent conversion can be achieved through a three-particle interaction between one magnon and two photons whose frequency difference is resonant with the magnon frequency, as in optomechanics with two photons and a phonon. The large spin density of a transparent ferromagnetic insulator (such as the ferrite yttrium iron garnet) in an optical cavity provides an intrinsic photon-magnon coupling strength that we calculate to exceed reported optomechanical couplings. A large cavity photon number and properly selected cavity detuning produce a predicted effective coupling strength sufficient for observing electromagnetically induced transparency and the Purcell effect, and even to reach the ultra-strong coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei

The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electron ensemble will relax. A theory of spin relaxation based on the theory of random walks is applied to such an ensemble precessing in an oblique magnetic field, and the precise form of the (unequal) longitudinal and transverse spin relaxation analytically derived. To investigate this mechanism, electrical three-terminal Hanle measurements were performed on epitaxially grown Co$_2$MnSi/$n$-GaAs heterostructures fabricated into electrical spin injection devices. The proposed anisotropic spin relaxation mechanism is required to satisfactorily describe the Hanle lineshapes when the applied field is oriented at large oblique angles.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Changing the lattice position of a bistable single magnetic dopant in a semiconductor using a scanning tunneling microscope

We report a reversible and hysteretic change in the topography measured with a scanning tunneling microscope near a single Fe dopant in a GaAs surface when a small positive bias voltage is applied. First-principles calculations of the formation energy of a single Fe atom embedded in GaAs as a function of displacement from the substitutional site support the interpretation of a reversible lattice displacement of the Fe dopant. Our calculations indicate a second stable configuration for the Fe dopant within the lattice, characterized by a displacement along the [111] axis, accompanied by a change in atomic configuration symmetry about the Fe from four-fold to six-fold symmetry. The resulting atomic configurations are then used within a tight-binding calculation to determine the effect of a Fe position shift on the topography. These results expand the range of demonstrated local configurational changes induced electronically for dopants, and thus may be of use for sensitive control of dopant properties and dopant-dopant interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven hyperfine field. The temperature dependence of this effect reveals a strong correlation with carrier freeze out, implying that at low temperatures the free carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. This result resolves a long-standing and contentious question of the origin of the spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding paves the way for future experiments exploring the time-dependent exchange interaction at the ferromagnet/semiconductor interface and its impact on spin dissipation and transport in the regime of dynamically-driven spin pumping.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-orbit coupling and operation of multi-valley spin qubits

Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits, addressing them via an electric field dependent g-factor. We perform randomized benchmarking and find that both qubits can be operated with high fidelity. Surprisingly, we find that the g-factors of the one-electron and three-electron qubits have an approximately linear but opposite dependence as a function of the applied dc electric field. We develop a theory to explain this g-factor behavior based on the spin-valley coupling that results from the sharp interface. The outer "shell" electron in the three-electron qubit exists in the higher of the two available conduction-band valley states, in contrast with the one-electron case, where the electron is in the lower valley. We formulate a modified effective mass theory and propose that inter-valley spin-flip tunneling dominates over intra-valley spin-flips in this system, leading to a direct correlation between the spin-orbit coupling parameters and the g-factors in the two valleys. In addition to offering all-electrical tuning for single-qubit gates, the g-factor physics revealed here for one-electron and three-electron qubits offers potential opportunities for new qubit control approaches.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins

We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance ($\sim 20$\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures

Circulating orbital currents, originating from the spin-orbit interaction, are calculated for semiconductor nanostructures in the shape of spheres, disks, spherical shells and rings for the electron ground state with spin oriented along a symmetry axis. The currents and resulting orbital and spin magnetic moments, which combine to yield the effective electron g factor, are calculated using a recently introduced formalism that allows the relative contributions of different regions of the nanostructure to be identified. For all these spherically or cylindrically symmetric hollow or solid nanostructures, independent of material composition and whether the boundary conditions are hard or soft, the dominant orbital current originates from intermixing of valence band states in the electron ground state, circulates within the nanostructure, and peaks approximately halfway between the center and edge of the nanostructure in the plane perpendicular to the spin orientation. For a specific material composition and confinement character, the confinement energy and orbital moment are determined by a single size-dependent parameter for spherically symmetrical nanostructures, whereas they can be independently tuned for cylindrically symmetric nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-orbit-induced circulating currents in a semiconductor nanostructure

Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for $g=0$) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g. from multiple traps, site-energy disorder and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intra-site spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin polarization oscillations without spin precession: spin-orbit entangled resonances in quasi-one-dimensional spin transport

Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance). A fully quantum mechanical theory for transport through multiple subbands of the one-dimensional system provides the dependence of the spin transport on the applied magnetic field and channel width, including a resonant depolarization of spins when the Zeeman energy matches the subband energy splittings and a spin texture transverse to the magnetic field. The resonance phenomenon is robust to disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors

A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar interactions have little time to operate between hopping events. We find an angle-of-field dependence of the magnetoresistance that agrees with previous experiments and numerical simulations. In addition we report new magnetoresistive behavior that critically depends upon the amount of anisotropy in the dipolar interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Valence state manipulation of single Fe impurities in GaAs by STM

The incorporation of Fe in GaAs was studied by cross-sectional scanning tunneling microscopy (X-STM). The observed local electronic contrast of a single Fe atom is found to depend strongly on its charge state. We demonstrate that an applied tip voltage can be used to manipulate the valence and spin state of single Fe impurities in GaAs. In particular we can induce a transition from the Fe{3+)- 3d5 - isoelectronic state to the Fe{2+} - 3d6 - ionized acceptor state with an associated change of the spin moment. Fe atoms sometimes produce dark anisotropic features in topographic maps, which is consistent with an interference between different tunneling paths.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Domain wall attraction and repulsion during spin-torque-induced coherent motion

We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an effective attraction at large separations and an effective repulsion at short separations. In an intermediate range of currents the two domain walls will reach a natural equilibrium spacing that depends on the magnitude of the current flowing through the material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots

The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g-factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Semiclassical theory of magnetoresistance in positionally-disordered organic semiconductors

A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes, the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their lineshapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin-flip induced magnetoresistance in positionally disordered organic solids

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin flips on hopping transport by considering the effect of spin dynamics on an effective density of hopping sites. Faster spin-flip transitions open up `spin-blocked' pathways to become viable conduction channels and hence produces magnetoresistance. The magnetoresistance can be found analytically in several regimes, including when the spin-flip time is slower than the hopping time. The ratio of hopping time to the hyperfine precession time is a crucial quantity in determining the shape of magnetoresistance curves. Studies of magnetoresistance in known systems with controllable positional disorder would provide a stringent test of this model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Size-dependence of Strong-Coupling Between Nanomagnets and Photonic Cavities

The coherent dynamics of a coupled photonic cavity and a nanomagnet is explored as a function of nanomagnet size. For sufficiently strong coupling eigenstates involving highly entangled photon and spin states are found, which can be combined to create coherent states. As the size of the nanomagnet increases its coupling to the photonic mode also monotonically increases, as well as the number of photon and spin states involved in the system's eigenstates. For small nanomagnets the crystalline anisotropy of the magnet strongly localized the eigenstates in photon and spin number, quenching the potential for coherent states. For a sufficiently large nanomagnet the macrospin approximation breaks down and different domains of the nanomagnet may couple separately to the photonic mode. Thus the optimal nanomagnet size is just below the threshold for failure of the macrospin approximation.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Strong-field interactions between a nanomagnet and a photonic cavity

We analyze the interaction of a nanomagnet with a single photonic mode of a microcavity in a fully quantum-mechanical treatment and find that exceptionally large quantum-coherent magnet-photon coupling can be achieved. Coupling terms in excess of several THz are predicted to be achievable in a spherical cavity of ~1 mm radius with a nanomagnet of ~100 nm radius and ferromagnetic resonance frequency of ~200 GHz. Eigenstates of the magnet-photon system correspond to entangled states of spin orientation and photon number, in which over 10^5 values of each quantum number are represented; conversely initial (coherent) states of definite spin and photon number evolve dynamically to produce large oscillations in the microwave power (and nanomagnet spin orientation), and are characterized by exceptionally long dephasing times.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots

Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

0 citations0 reviewsNo code linkedOpen access