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Researcher profile

V. N. Krasnorussky

V. N. Krasnorussky contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2022arXiv

Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes

A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

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preprint2015arXiv

Magnetic Single Domain State of the Monochiral Helimagnet MnSi in Zero Field Limit: Magnetic Properties Study

Attention is drawn to a possibility to obtain the monochiral helimagnet MnSi in a magnetic single domain state (SDS) in zero magnetic field limit. It is shown that this metastable zero field magnetic SDS can be achieved by gradual decrease of the field down to zero after initial transformation of MnSi to a spin-polarized state in high fields $H$. This can be achieved only for $\bf{H}\parallel$ [111]. Investigations of MnSi in magnetic SDS give us a possibility to determine the two components of low field magnetic susceptibility of this compound, $χ_{\perp}(T)$ and $χ_{\parallel}(T)$ [$χ_{\perp}$ and $χ_{\parallel}$ correspond to $\bf{H}\perp$, and $\bf{H}\parallel$ (111)-plane containing magnetic moments in helically ordered state]. These results are compared with macroscopic magnetic susceptibility of MnSi earlier determined for this compound only in magnetic multi domain state (MDS). In addition our results are compared with the data reported for some non-monochiral helimagnets. Characteristic features of monochiral helimagnets are elucidated.

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preprint2014arXiv

Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions

The magnetoresistance (MR) $Δρ/ρ$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $Δρ/ρ$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-Δρ/ρ$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$μ_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $Δρ/ρ$$\sim$$μ_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $μ_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $Δρ/ρ=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

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preprint2014arXiv

Magnetization scaling in the paramagnetic phase of Mn1-xFexSi solid solutions

The magnetization field and temperature dependences in the paramagnetic phase of Mn1-xFexSi solid solutions with x<0.3 are investigated in the range B<5 T and T<60 K. It is found that field dependences of the magnetization M(B,T=const) exhibit scaling behavior of the form B\partial M/\partial B-M=F(B/(T-Ts)), where Ts denotes an empirically determined temperature of the transition into the magnetic phase with fluctuation driven short-range magnetic order and F(\c{hi}) is a universal scaling function for given composition. The scaling relation allowed concluding that the magnetization in the paramagnetic phase of Mn1-xFexSi is represented by the sum of two terms. The first term is saturated by the scaling variable \c{hi}=B/(T-Ts), whereas the second is linearly dependent on the magnetic field. A simple analytical formula describing the magnetization is derived and applied to estimates of the parameters characterizing localized magnetic moments in the studied system. The obtained data may be qualitatively interpreted assuming magnetic inhomogeneity of the paramagnetic phase on the nanoscale.

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preprint2014arXiv

Specific Features of Magnetic Phase Diagram of an MnSi Helimagnet

Magnetization curves of MnSi single crystals have been measured in a range of temperatures $T = 5.5 - 35$ K and magnetic field strengths $H \leq 11$ kOe for $H \parallel$ [111], [001], and [110]. Special attention has been paid to the temperature interval near $T_N = 28.8$K, where MnSi exhibits a transition to the state with a long-period helical magnetic structure. Some new features in the magnetic behavior of MnSi have been found. In particular, in an intermediate temperature region above the transition (28.8 K $= T_N \leq T < 31.5$ K), the $dM(H)/dH$ curves exhibit anomalies that are not characteristic of the typical paramagnetic state. It is established that the line of the characteristic field $H^ \ast (T)$ of this anomaly is a natural extrapolation of the temperature dependence of the field of the transition from a conical phase to an induced ferromagnetic phase observed at $T < T_N$. It is concluded that the properties of MnSi in the indicated intermediate region are related to and governed by those of the conical phase (rather than of the A phase). Based on these data, magnetic phase diagrams of MnSi for $H \parallel$ [111], [001], and [110] are plotted and compared to diagrams obtained earlier by other methods.

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preprint2014arXiv

Studying the Magnetic Properties of CoSi Single Crystals

The magnetic properties of CoSi single crystals have been measured in a range of temperatures $T = 5.5 - 450$ K and magnetic field strengths $H \leq 11$ kOe. A comparison of the results for crystals grown in various laboratories allowed the temperature dependence of magnetic susceptibility $χ(T) = M(T)/H$ to be determined for a hypothetical &#34;ideal&#34; (free of magnetic impurities and defects) CoSi crystal. The susceptibility of this ideal crystal in the entire temperature range exhibits a diamagnetic character. The $χ(T)$ value significantly increases in absolute value with decreasing temperature and exhibits saturation at the lowest temperatures studied. For real CoSi crystals of four types, paramagnetic contributions to the susceptibility have been evaluated and nonlinear (with respect to the field) contributions to the magnetization have been separated and taken into account in the calculations of $χ(T)$.

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