BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

V. V. Glushkov

V. V. Glushkov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-el

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
9works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2022arXiv

Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes

A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magnetization of the Mn$_{1-x}$Fe$_x$Si in high magnetic field up to 50 T: possible evidence of a field-induced Griffiths phase

Magnetic properties of single crystals of Mn$_{1-x}$Fe$_x$Si solid solutions with $x < 0.2$ are investigated by pulsed field technique in magnetic fields up to 50 T. It is shown that magnetization of Mn$_{1-x}$Fe$_x$Si in the paramagnetic phase follows power law $M(B) \sim B^α$ with the exponents $α\sim 0.33-0.5$, which starts above characteristic fields $B_c \sim 1.5-7$ T depending on the sample composition and lasts up to highest used magnetic field. Analysis of magnetization data including SQUID measurements in magnetic fields below 5 T suggests that this anomalous behavior may be likely attributed to the formation of a field-induced Griffiths phase in the presence of spin-polaron effects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi

The magnetic inhomogeneity of the A-phase in MnSi chiral magnet is identified for the first time from the precise measurements of transverse magnetoresistance (MR) anisotropy. The area inside the A-phase (A-phase core) corresponds to isotropic MR having no confinement to the MnSi crystal lattice. Per contra, the MR becomes anisotropic both on the border of the A-phase and in other magnetic phases, the strongest magnetic scattering being observed when external magnetic field applied along [001] or [00-1] directions. We argue here that the established MR features prove the presence of two different types of the skyrmion lattices inside the A-phase, and the dense skyrmion state of the A-phase core is built from individual skyrmions similar to Abrikosov-type magnetic vortexes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scrutinizing Hall effect in Mn$_{1-x}$Fe$_{x}$Si: Fermi surface evolution and hidden quantum criticality

Separating between ordinary (OHE) and anomalous (AHE) Hall effect in the paramagnetic phase of Mn$_{1-x}$Fe$_{x}$Si reveals OHE sign inversion associated with the hidden quantum critical (QC) point $x^*\sim0.11$. The semimetallic behavior at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions and QC in Mn$_{1-x}$Fe$_{x}$Si. The change of electron and hole concentrations is considered as a driving force for tuning the QC regime in Mn$_{1-x}$Fe$_{x}$Si via modifying of RKKY exchange interaction within the Heisenberg model of magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Suppression of Superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ : Evidence of Static Magnetic Moments Induced by Non-Magnetic Impurities

Based on low temperature resistivity, heat capacity and magnetization investigations we show that the unusually strong suppression of superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ BSC-type superconductors in the range $x$$<$0.08 is caused by the emergence of static spin polarization in the vicinity of non-magnetic lutetium impurities. The analysis of received results points to a formation of static magnetic moments with $μ_{eff}$$\approx$$3μ_B$ per Lu-ion. The size of these spin polarized nanodomains was estimated to be about 5 $Å$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions

The magnetoresistance (MR) $Δρ/ρ$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $Δρ/ρ$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-Δρ/ρ$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$μ_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $Δρ/ρ$$\sim$$μ_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $μ_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $Δρ/ρ=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetization scaling in the paramagnetic phase of Mn1-xFexSi solid solutions

The magnetization field and temperature dependences in the paramagnetic phase of Mn1-xFexSi solid solutions with x<0.3 are investigated in the range B<5 T and T<60 K. It is found that field dependences of the magnetization M(B,T=const) exhibit scaling behavior of the form B\partial M/\partial B-M=F(B/(T-Ts)), where Ts denotes an empirically determined temperature of the transition into the magnetic phase with fluctuation driven short-range magnetic order and F(\c{hi}) is a universal scaling function for given composition. The scaling relation allowed concluding that the magnetization in the paramagnetic phase of Mn1-xFexSi is represented by the sum of two terms. The first term is saturated by the scaling variable \c{hi}=B/(T-Ts), whereas the second is linearly dependent on the magnetic field. A simple analytical formula describing the magnetization is derived and applied to estimates of the parameters characterizing localized magnetic moments in the studied system. The obtained data may be qualitatively interpreted assuming magnetic inhomogeneity of the paramagnetic phase on the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hall effect in the vicinity of quantum critical point in Tm1-xYbxB12

The angular, temperature and magnetic field dependences of Hall resistance roH for the rare-earth dodecaboride solid solutions Tm1-xYbxB12 have been studied in a wide vicinity of the quantum critical point (QCP) xC~0.3. The measurements performed in the temperature range 1.9-300 K on high quality single crystals allowed to find out for the first time in these fcc compounds both an appearance of the second harmonic contribution in ro2H at QCP and its enhancement under the Tm to ytterbium substitution and/or with increase of external magnetic field. When the Yb concentration x increases a negative maximum of a significant amplitude was shown to appear on the temperature dependences of Hall coefficient RH(T) for the Tm1-xYbxB12 compounds. Moreover, a complicated activation type behavior of the Hall coefficient is observed at intermediate temperatures for x>0.5 with activation energies Eg~200K and Ea~55-75K in combination with the sign inversion of RH(T) at low temperatures in the coherent regime. The density of states renormalization effects are analyzed within the variation of Yb concentration and the features of the charge transport in various regimes (charge gap formation, intra-gap manybody resonance and coherent regime) are discussed in detail in Tm1-xYbxB12 solid solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin excitations of the correlated semiconductor FeSi probed by THz radiation

By direct measurements of the complex optical conductivity $σ(ν)$ of FeSi we have discovered a broad absorption peak centered at frequency $ν_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.

0 citations0 reviewsNo code linkedOpen access