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Researcher profile

V. N. Golovach

V. N. Golovach contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

4 published item(s)

preprint2020arXiv

Phase-Controllable Nonlocal Spin Polarization in Proximitized Nanowires

We study the magnetic and superconducting proximity effects in a semiconducting nanowire (NW) attached to superconducting leads and a ferromagnetic insulator (FI). We show that a sizable equilibrium spin polarization arises in the NW due to the interplay between the superconducting correlations and the exchange field in the FI. The resulting magnetization has a nonlocal contribution that spreads in the NW over the superconducting coherence length and is opposite in sign to the local spin polarization induced by the magnetic proximity effect in the normal state. For a Josephson-junction setup, we show that the nonlocal magnetization can be controlled by the superconducting phase bias across the junction. Our findings are relevant for the implementation of Majorana bound states in state-of-the-art hybrid structures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A phonon laser utilizing quantum-dot spin states

We propose a nano-scale realization of a phonon laser utilizing phonon-assisted spin flips in quantum dots to amplify sound. Owing to a long spin relaxation time, the device can be operated in a strong pumping regime, in which the population inversion is close to its maximal value allowed under Fermi statistics. In this regime, the threshold for stimulated emission is unaffected by spontaneous spin flips. Considering a nanowire with quantum dots defined along its length, we show that a further improvement arises from confining the phonons to one dimension, and thus reducing the number of phonon modes available for spontaneous emission. Our work calls for the development of nanowire-based, high-finesse phonon resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

On the nature of tunable hole g-factors in quantum dots

Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50's, this mechanism of g-factor control has been largely overlooked in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of spin-selective tunneling in SiGe nanocrystals

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

0 citations0 reviewsNo code linkedOpen access