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Researcher profile

O. G. Schmidt

O. G. Schmidt contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.supr-conquant-phcond-mat.softphysics.atom-phphysics.class-ph

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Published work

16 published item(s)

preprint2020arXiv

Topological transitions in superconductor nanomembranes in a magnetic field with submicron inhomogeneity under a strong transport current

Under a strong transport current, the induced voltage in superconductor nanomembranes in a magnetic field with submicron inhomogeneity shows a pulse on a certain interval of the magnetic field. It is a manifestation of a wide phase-slip domain. The topological transition accompanying the phase-slip effect consists in the occurrence of two new loops of weak superconducting currents connecting two regions of superconducting screening currents, which are disconnected in case of vortex-chain dynamics. In the middle of the phase-slip domain, rapid dynamics of the superconducting order parameter consists in decoupling of a spontaneously nucleated vortex-antivortex pair, subsequent motion of a vortex and an antivortex in the opposite directions followed by their annihilation with an antivortex and a vortex from the adjacent pairs. The submicron-scale inhomogeneity of the magnetic field can be achieved through a direct patterning of the magnetic field applied to a planar membrane or using advanced nanostructuring, such as roll-up technology, focused ion-beam deposition or coating carbon nanotubes by superconducting materials. If the applied magnetic field is orthogonal to the axis of a microtube, which carries transport current in the azimuthal direction, the phase-slip regime is characterized by the vortex-antivortex lifetime of 10E-15 s versus 10E-12 s for disconnected vortex dynamics in the half-tubes. The phase-slip dynamics determines the voltage-magnetic field and voltage-current characteristics in nanoarchitectures with multiple disconnected loops of superconducting screening currents.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An artificial atom locked to natural atoms

Single-photon sources that emit photons at the same energy play a key role in the emerging concepts of quantum information, such as entanglement swapping, quantum teleportation and quantum networks. They can be realized in a variety of systems, where semiconductor quantum dots, or 'artificial atoms', are arguably among the most attractive. However, unlike 'natural atoms', no two artificial atoms are alike. This peculiarity is a serious hurdle for quantum information applications that require photonic quantum states with identical energies. Here we demonstrate a single artificial atom that generates photons with an absolute energy that is locked to an optical transition in a natural atom. Furthermore, we show that our system is robust and immune to drifts and fluctuations in the environment of the emitter. Our demonstration is crucial for realization of a large number of universally-indistinguishable solid-state systems at arbitrary remote locations, where frequency-locked artificial atoms might become fundamental ingredients.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Compositionally-modulated Si1-xGex multilayers with cross-plane thermal conductivity below the thin-film alloy limit

We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Bending and wrinkling as competing relaxation pathways for strained free-hanging films

An equilibrium phase diagram for the shape of compressively strained free-hanging films is developed by total strain energy minimization. For small strain gradients Δε, the film wrinkles, while for sufficiently large Δε, a phase transition from wrinkling to bending occurs. We consider competing relaxation mechanisms for free-hanging films, which have rolled up into tube structures, and we provide an upper limit for the maximum achievable number of tube rotations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for Triplet Superconductivity in a Superconductor-Ferromagnet Spin Valve

We have studied the dependence of the superconducting (SC) transition temperature on the mutual orientation of magnetizations of Fe1 and Fe2 layers in the spin valve system CoO_x/Fe1/Cu/Fe2/Pb. We find that this dependence is nonmonotonic when passing from the parallel to the antiparallel case and reveals a distinct minimum near the orthogonal configuration. The analysis of the data in the framework of the SC triplet spin valve theory gives direct evidence for the long-range triplet superconductivity arising due to noncollinearity of the two magnetizations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

On the nature of tunable hole g-factors in quantum dots

Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon application of the electric field, has an effect on the mixing strength and leads to a strong non-monotonic modulation of the g-factor. Despite intensive studies of the g-factor since the late 50's, this mechanism of g-factor control has been largely overlooked in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure

Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Universal recovery of the bright-exciton level-degeneracy in quantum dots without structural symmetry

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric fields, despite the fact that this possibility has fundamentally been doubted. This is achieved by using one external perturbation to align the polarization of the exciton emission along the axis of the second perturbation, which then erases completely the energy splitting of the states. This result, which holds for any QD structure, highlights the potential of combining complementary external fields to create artificial atoms meeting the stringent requirements posed by scalable semiconductor-based quantum-technology.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic and optical properties of quantum wells embedded in wrinkled nanomembranes

The authors theoretically investigate quantum confinement and transition energies in quantum wells (QWs) asymmetrically positioned in wrinkled nanomembranes. Calculations reveal that the wrinkle profile induces both blue- and redshifts depending on the lateral position of the QW probed. Relevant radiative transistions include the ground state of the electron (hole) and excited states of the hole (electron). Energy shifts as well as stretchability of the structure are studied as a function of wrinkle amplitude and period. Large tunable bandwidths of up to 70 nm are predicted for highly asymmetric wrinkled QWs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of spin-selective tunneling in SiGe nanocrystals

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Directional Roll-up of Nanomembranes Mediated by Wrinkling

We investigate the relaxation of rectangular wrinkled thin films intrinsically containing an initial strain gradient. A preferential rolling direction, depending on wrinkle geometry and strain gradient, is theoretically predicted and experimentally verified. In contrast to typical rolled-up nanomembranes, which bend perpendicular to the longer edge of rectangular patterns, we find a regime where rolling parallel to the long edge of the wrinkled film is favorable. A non-uniform radius of the rolled-up film is well reproduced by elasticity theory and simulations of the film relaxation using a finite element method.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effects of variable anisotropic-strain on the emission of neutral excitons confined in epitaxial quantum dots

We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the excitonic fine structure splitting varies by several tens of $μ$eVs as the strain is varied. By means of a continuum model we mainly ascribe the observed effects to substantial changes of the hole wave function. These results show that strain-fields of a few permill magnitude are suffcient to dramatically modify the electronic structure of QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules

We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain more insight into the charge transfer and tunneling mechanisms. Non-resonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is found to be the dominant tunable decay mechanism of excitons besides radiative recombination.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Experimental Observation of Electronic Coupling in GaAs Lateral Quantum Dot Molecules

We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line crossings and avoided crossings is observed for different molecules. Anticrossing patterns in the photoluminescence spectra provide direct evidence of the lateral coupling between two nearby quantum dots. A simple calculation suggests that the coupling is mediated by electron tunneling, through which the states of direct and indirect exciton are brought into resonance.

0 citations0 reviewsNo code linkedOpen access