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Researcher profile

V. Křápek

V. Křápek contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2012arXiv

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19 type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At approximately I>3W/cm^2, additional bands with a nearly quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin state of negative charge-transfer material SrCoO3

We employ the combination of the density functional and the dynamical mean-field theory (LDA+DMFT) to investigate the electronic structure and magnetic properties of SrCoO3, monocrystal of which were prepared recently. Our calculations lead to a ferromagnetic metal in agreement with experiment. We find that, contrary to some suggestions, the local moment in SrCoO3 does not arise from intermediate spin state, but is a result of coherent superposition of many different atomic states. We discuss how attribution of magnetic response to different atomic states in solids with local moments can be quantified.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin state transition and covalent bonding in LaCoO3

We use the dynamical mean-field theory to study a p-d Hubbard Hamiltonian for LaCoO3 derived from ab initio calculations in local density approximation (LDA+DMFT scheme). We address the origin of local moments observed above 100 K and discuss their attribution to a particular atomic multiplet in the presence of covalent Co-O bonding. We show that in solids such attribution, based on the single ion picture, is in general not possible. We explain when and how the single ion picture can be generalized to provide a useful approximation in solids. Our results demonstrate that the apparent magnitude of the local moment is not necessarily indicative of the underlying atomic multiplet. We conclude that the local moment behavior in LaCoO3 arises from the high-spin state of Co and explain the precise meaning of this statement.

0 citations0 reviewsNo code linkedOpen access