Source author record

V. K. Kalevich

V. K. Kalevich appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

Catalog footprint

What is connected

9works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2019arXiv

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields.

preprint2016arXiv

Spin-dependent recombination in GaAs(1-x)N(x) alloys at oblique magnetic field

We have studied experimentally and theoretically the optical orientation and spin-dependent Shockley-Read-Hall recombination in a semiconductor in a magnetic field at an arbitrary angle between the field and circularly polarized exciting beam. The experiments are performed at room temperature in GaAsN alloys where deep paramagnetic centers are responsible for the spin-dependent recombination. The observed magnetic-field dependences of the circular polarization r(B) and intensity J(B) of photoluminescence can be approximately described as a superposition of two Lorentzian contours, normal and inverted, with their half-widths differing by an order of magnitude. The normal (narrow) Lorentzian contour is associated with depolarization of the transverse (to the field) component of spin polarization of the localized electrons, whereas the inverted (broad) Lorentzian is due to suppression of the hyperfine interaction of the localized electron with the defect nucleus. The ratio between the height of one Lorentzian and depth of the other is governed by the field tilt angle. In contrast to the hyperfine interaction of a shallow-donor-bound electron with a large number of nuclei of the crystal lattice, in the optical orientation of the electron-nuclear system under study no additional narrow peak appears in the oblique field. This result demonstrates that in the GaAsN alloys the hyperfine interaction of the localized electron with the single nucleus of the paramagnetic center remains strong even at room temperature. For a theoretical description of the experiment, we have extended the theory of spin-dependent recombination via deep paramagnetic centers with the nuclear angular momentum I = 1/2 developed previously for the particular case of the longitudinal field. The calculated curves r(B), J(B) agree with the approximate description of the experimental dependences as a sum of two Lorentzians.

preprint2014arXiv

Controllable structuring of exciton-polariton condensates in cylindrical pillar microcavities

We observe condensation of exciton polaritons in quantum states composed of concentric rings when exciting cylindrical pillar GaAs/AlGaAs microcavities non-resonantly by a focused laser beam normally incident at the center of the pillar. The number of rings depends on the pumping intensity and the pillar size, and may achieve 5 in the pillar of 40 mkm diameter. Breaking the axial symmetry when moving the excitation spot away from the pillar center leads to transformation of the rings into a number of bright lobes corresponding to quantum states with nonzero angular momenta. The number of lobes, their shape and location are dependent on the spot position. We describe the out-of-equilibrium condensation of polaritons in the states with different principal quantum numbers and angular momenta with a formalism based on Boltzmann-Gross-Pitaevskii equations accounting for repulsion of polaritons from the exciton reservoir formed at the excitation spot and their spatial confinement by the pillar boundary.

preprint2014arXiv

Spin-dependent recombination and hyperfine interaction at the deep defects

We present a theoretical study of optical electron-spin orientation and spin-dependent Shockley-Read-Hall recombination taking into account the hyperfine coupling between the bound-electron spin and the nuclear spin of a deep paramagnetic center. We show that the number of master rate equations for the components of the electron-nuclear spin-density matrix is considerably reduced due to the restrictions imposed by the axial symmetry of the system under consideration. The rate equations describe the Zeeman splitting of the electron spin sublevels in the longitudinal magnetic field, the spin relaxation of free and bound electrons, and the nuclear spin relaxation in the two defect states, with one and two (singlet) bound electrons. The general theory is developed for an arbitrary value of the nuclear spin I, the magnetic-field and excitation-power dependencies of the electron and nuclear spin polarizations are calculated for the particular value of I = 1/2. The role of the nuclear spin relaxation in each of the both defect states is analyzed. The circular polarization and intensity of the edge photoluminescence as well as the dynamic nuclear spin polarization as functions of the excitation power are shown to have bell-shaped forms

preprint2013arXiv

Ring-shaped polariton lasing in pillar microcavities

Optically generated exciton-polaritons in cylindric semiconductor pillar microcavity with embedded GaAs/AlGaAs quantum wells demonstrate a clear polariton lasing regime. When exciting in the center of the pillar we detect a ring-shaped emission, where the peak of intensity can be separated from the excitation spot by more than 10 micrometers. The spatial coherence of the ring emission is verified by interferometry measurements. These observations are interpreted by drift of the exciton polariton condensate away from the excitation spot due to its repulsion from the exciton reservoir and by its spatial confinement by the pillar boundary.

preprint2012arXiv

Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature

The intensity and the giant circular polarization of edge luminescence in a longitudinal magnetic field have been measured in nitrogen alloys GaAsN under circularly polarized pumping. It has been found that these dependences are shifted with respect to zero field by a value Beff. The magnitude of the internal field Beff increases with increase in pumping intensity and reaches saturation (~250 Gauss) at great densities of excitation. The saturation of the Beff field with growth of pumping indicates that this is a field of nuclei, polarized dynamically due to hyperfine interaction with optically oriented deep paramagnetic centers, rather than a field of exchange interaction created on the center by spin-polarized photo-excited conduction electrons. The short time of nuclear polarization by electrons (<15 mks), measured under modulation of circular polarization of the exciting light with high frequency, points to a small number of nuclei undergoing hyperfine interaction with an electron localized at a center.

preprint2011arXiv

Amplification of spin-filtering effect by magnetic field in GaAsN alloys

We have found that intensity $I$ and circular polarization degree $ρ$ of the edge photoluminescence, excited in GaAsN alloys by circularly polarized light at room temperature, grow substantially in the longitudinal magnetic field $B$ of the order of 1\,kG. This increase depends on the intensity of pumping and, in the region of weak or moderate intensities, may reach a twofold value. In two-charge-state model, which considers spin-dependent recombination of spin-oriented free electrons on deep paramagnetic centers, we included the magnetic-field suppression of spin relaxation of the electrons bound on centers. The model describes qualitatively the rise of $ρ$ and $I$ in a magnetic field under different pump intensities. Experimental dependences $ρ(B)$ and $I(B)$ are shifted with respect to zero of the magnetic field by a value of $\sim$170\,Gauss, while the direction of the shift reverses with change of the sign of circular polarization of pumping. As a possible cause of the discovered shift we consider the Overhauser field, arising due to the hyperfine interaction of an electron bound on a center with nuclei of the crystal lattice in the vicinity of the center.

preprint2010arXiv

Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping

We present a systematic theoretical study of spin-dependent recombination and its effect on optical orientation of photoelectron spins in semiconductors with deep paramagnetic centers. For this aim we generalize the Shockley-Read theory of recombination of electrons and holes through the deep centers with allowance for optically-induced spin polarization of free and bound electrons. Starting from consideration of defects with three charge states we turn to the two-charge-state model possessing nine parameters and show that it is compatible with available experimental data on undoped GaAsN alloys. In the weak- and strong-pumping limits, we derive simple analytic equations which are useful in prediction and interpretation of experimental results. Experimental and theoretical dependencies of the spin-dependent-recombination ratio and degree of photoluminescence circular polarization on the pumping intensity and the transverse magnetic field are compared and discussed.

preprint2006arXiv

Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature

We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.